Inventor · disambiguated record
Bong-Jin Kuh
Also filed as: KUH BONG-JIN
36 granted patents·12 pending applications·565 citations·filing 2004–2024
98Inventor score
Top patents by PatentIndex Score
48 records- 0195US9391090B2Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 12, 2016·164 cites·22 claims
- 0295US7482616B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 27, 2009·39 cites·67 claims
- 0395US7462900B2Phase changeable memory devices including nitrogen and/or siliconSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 9, 2008·34 cites·22 claims
- 0495US7425735B2Multi-layer phase-changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 16, 2008·38 cites·24 claims
- 0594US7615401B2Methods of fabricating multi-layer phase-changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 10, 2009·33 cites·21 claims
- 0694US7476917B2Phase-changeable memory devices including nitrogen and/or silicon dopantsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 13, 2009·31 cites·12 claims
- 0793US9142558B2Semiconductor device having supporter and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 22, 2015·20 cites·26 claims
- 0892US9553141B2Semiconductor device having supporterSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 24, 2017·10 cites·20 claims
- 0991US7402851B2Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 22, 2008·49 cites·19 claims
- 1089US9608163B2Nano-structure semiconductor light emitting deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 28, 2017·6 cites·7 claims
- 1188US9576969B2Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Feb 21, 2017·6 cites·10 claims
- 1288US7817464B2Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic system including the same and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 19, 2010·22 cites·24 claims
- 1387US8970039B2Integrated circuit devices including electrode support structures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Mar 3, 2015·9 cites·15 claims
- 1487US8026543B2Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 27, 2011·12 cites·20 claims
- 1583US8445354B2Methods for manufacturing a phase-change memory deviceHA YONG-HO·Filed 2012·Granted May 21, 2013·5 cites·11 claims
- 1683US7791932B2Phase-change material layer and phase-change memory device including the phase-change material layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 7, 2010·11 cites·25 claims
- 1782US8815697B2Method of fabricating semiconductor deviceYOON JUN-HO·Filed 2012·Granted Aug 26, 2014·9 cites·19 claims
- 1879US9110233B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Aug 18, 2015·4 cites·13 claims
- 1979US8012789B2Nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 6, 2011·6 cites·13 claims
- 2079US7394087B2Phase-changeable memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 1, 2008·13 cites·15 claims
- 2177US9316789B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Apr 19, 2016·2 cites·7 claims
- 2276US7692176B2Phase-changeable memory devices including an adiabatic layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 6, 2010·6 cites·15 claims
- 2376US7411208B2Phase-change memory device having a barrier layer and manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 12, 2008·20 cites·44 claims
- 2475US9842966B2Nano-structured semiconductor light-emitting elementSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 12, 2017·2 cites·14 claims
- 2574US8993420B2Methods of forming epitaxial layersSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Mar 31, 2015·3 cites·20 claims
- 2672US7727458B2Method of forming a chalcogenide compound targetSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 1, 2010·2 cites·17 claims
- 2767US7943918B2Multi-layer phase-changeable memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted May 17, 2011·4 cites·18 claims
- 2865US7989259B2Methods of manufacturing phase-changeable memory devices including upper and lower electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Aug 2, 2011·2 cites·17 claims
- 2965US2025285979A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3061US2025357116A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3159US2024164094A1Semiconductor memory devices and electronic systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3257US2014357062A1Fabricating method of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 3356US7741631B2Phase-changeable memory devices including phase-changeable materials on silicon nitride layersSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jun 22, 2010·2 cites·10 claims
- 3454US8133429B2Methods for manufacturing a phase-change memory deviceHA YONG-HO·Filed 2010·Granted Mar 13, 2012·1 cites·32 claims
- 3553US9269578B2Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Feb 23, 2016·0 cites·16 claims
- 3651US2023116342A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3749US9589795B2Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 7, 2017·0 cites·5 claims
- 3849US8513051B2Methods of forming phase-changeable memory devices including an adiabatic layerHA YONG-HO·Filed 2010·Granted Aug 20, 2013·0 cites·9 claims
- 3949US2014144380A1Gas supply pipes and chemical vapor deposition apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2012·Application pending·0 cites
- 4045US2011315946A1Nonvolatile memory deviceKO HAN-BONG·Filed 2011·Application pending·0 cites
- 4143US2006016396A1Apparatus for depositing a thin film on a substrateKUH BONG-JIN·Filed 2005·Application pending·0 cites
- 4241US2009014777A1Flash Memory Devices and Methods of Manufacturing the SameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4339US11183402B2Laser annealing apparatus for semiconductors having multiple laser energy measuring meansSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 23, 2021·0 cites·11 claims
- 4439US8492251B2Method of forming a thin layer structureKANG JONG-HOON·Filed 2012·Granted Jul 23, 2013·0 cites·17 claims
- 4539US2008075843A1Method of Forming a Phase-Change Memory Unit and Method of Manufacturing a Phase-Change Memory Device Using the SameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 4638US2013213910A1Boat for loading semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2012·Application pending·0 cites
- 4737US8617950B2Method of forming a capacitor and method of manufacturing a semiconductor device using the sameKUH BONG JIN·Filed 2012·Granted Dec 31, 2013·0 cites·20 claims
- 4833US2012032135A1Phase-Change Memory Units and Phase-Change Memory Devices Using the SameKUH BONG-JIN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →