Inventor · disambiguated record
Bongyong Lee
Also filed as: LEE BONGYONG
21 granted patents·12 pending applications·96 citations·filing 2010–2025
93Inventor score
Files withSAMSUNG ELECTRONICS CO LTD25SEMICONDUCTOR COMPONENTS IND LLC6LEE BONGYONG1NEXTGEN BIOSCIENCE CO LTD1
Top patents by PatentIndex Score
33 records- 0191US10741577B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 11, 2020·7 cites·20 claims
- 0291US8803222B2Three-dimensional semiconductor memory devices using direct strapping line connectionsLEE BONGYONG·Filed 2012·Granted Aug 12, 2014·30 cites·11 claims
- 0389US8942042B2Nonvolatile memory device and a method of adjusting a threshold voltage of a ground selection transistor thereofSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 27, 2015·8 cites·15 claims
- 0487US10403719B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 3, 2019·5 cites·20 claims
- 0586US11315946B2Vertical semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 26, 2022·2 cites·16 claims
- 0686US10790358B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 29, 2020·4 cites·20 claims
- 0784US9042175B2Non-volatile memory device and read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 26, 2015·22 cites·16 claims
- 0881US10998334B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 4, 2021·3 cites·20 claims
- 0976US12501649B2Power device with graded channelSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 1075US10971513B2Three-dimensional semiconductor memory devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 6, 2021·2 cites·20 claims
- 1174US8363482B2Flash memory devices with selective bit line discharge paths and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 29, 2013·8 cites·12 claims
- 1273US11114165B2Semiconductor devices having increased efficiency in generation of gate-induced drain leakage current without insulation deterioration and methods of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 7, 2021·1 cites·20 claims
- 1373US10923195B2Nonvolatile memory device, an operating method thereof, and a storage system including the nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 16, 2021·3 cites·20 claims
- 1472US12290007B2Magnetic memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 29, 2025·0 cites·15 claims
- 1568US11398437B2Power device including metal layerSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Jul 26, 2022·1 cites·20 claims
- 1668US2025210466A1Semiconductor devices and data storage systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1766US11778825B2Method of fabricating a vertical semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 1864US12125884B2MOSFET device with undulating channelSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Granted Oct 22, 2024·0 cites·19 claims
- 1964US2022359426A1Power device including metal layerSEMICONDUCTOR COMPONENTS IND LLC·Filed 2022·Application pending·0 cites
- 2064US2025185519A1Magnetic memory device and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2163US12278165B2Semiconductor storage devices and data storage systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 15, 2025·0 cites·20 claims
- 2262US12404252B2Salt of 2-amino-2-(2-(1-decyl-1H-1,2,3-triazol-4-yl)ethyl)propane-1,3-diol, and pharmaceutical composition containing sameNEXTGEN BIOSCIENCE CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·8 claims
- 2361US11605732B2Power device with graded channelSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Mar 14, 2023·0 cites·18 claims
- 2460US2024306398A1Three dimensional non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2558US2023413575A13d ferroelectric memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2655US11658214B2MOSFET device with undulating channelSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted May 23, 2023·0 cites·16 claims
- 2755US2023269941A1Semiconductor devices and data storage systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2855US2024015978A1Semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2954US2023139541A1Semiconductor device and data storage system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3054US2023371265A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3153US2023329012A1Semiconductor device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3252US2023337438A1Semiconductor devices and data storage systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3349US2014349453A1Methods of fabricating three-dimensional semiconductor memory devices using direct strapping line connectionsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →