Inventor · disambiguated record

Bo-Cyuan Lu

Also filed as: LU BO · LU BO-CYUAN · LÜ BO

37 granted patents·8 pending applications·37 citations·filing 2009–2025

95Inventor score

Technology areasH10P H01L H10D B01D B01J

Files withTAIWAN SEMICONDUCTOR MFG CO LTD40 BETTERGY CORP1 DOW GLOBAL TECHNOLOGIES LLC1 LONGHORN INTELLIGENT TECH CO LTD1 MA SHENGMING1

Top patents by PatentIndex Score

45 records

0195US10504990B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·9 cites·20 claims
0295US10037923B1Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·9 cites·20 claims
0392US11605555B2Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 14, 2023·2 cites·20 claims
0490US2025343069A1Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0589US11195717B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·2 cites·20 claims
0688US10475788B2Fin field effect transistor (FinFET) device structure with capping layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·4 cites·20 claims
0784US11239309B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 1, 2022·2 cites·20 claims
0884US2024379407A1Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
0983US12451390B2Trench filling through reflowing filling materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
1083US12119268B2Multi-layered insulating film stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·0 cites·20 claims
1183US2025006560A1Multi-layered insulating film stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1281US10483168B2Low-k gate spacer and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·2 cites·20 claims
1380US10734227B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·2 cites·20 claims
1479US2024387237A1Finfet device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1578US11823955B2Multi-layered insulating film stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·0 cites·20 claims
1677US12315759B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
1776US10797050B2Fin field effect transistor (finFET) device structure with capping layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·1 cites·20 claims
1875US12218241B2Semiconductor device structure with etch stop layer for reducing RC delayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
1975US10861959B2Deposition selectivity enhancement and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
2074US2024371875A1Gate structures in transistor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2173US10505021B2FinFet device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·1 cites·20 claims
2273US10355111B2Deposition selectivity enhancement and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·1 cites·20 claims
2372US11862508B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
2472US11335603B2Multi-layered insulating film stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 17, 2022·0 cites·20 claims
2571US11843028B2Isolation features and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
2669US12087775B2Gate structures in transistor devices and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
2769US11264383B2Fin field effect transistor (FinFET) device structure with capping layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·0 cites·20 claims
2868US11133229B2Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 28, 2021·0 cites·20 claims
2967US2022376079A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
3066US11041613B1Ceiling lampLONGHORN INTELLIGENT TECH CO LTD·Filed 2018·Granted Jun 22, 2021·1 cites·14 claims
3164US11316047B2Structure and formation method of semiconductor device with monoatomic etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 26, 2022·0 cites·20 claims
3264US10854521B2Low-k gate spacer and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·0 cites·20 claims
3363US11041135B2Cutting fluid, preparation method and application thereofXIAN SPACE ENGINE COMPANY LTD·Filed 2019·Granted Jun 22, 2021·0 cites·8 claims
3461US10535569B2Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
3561US10510612B2Low-K gate spacer and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·20 claims
3660US10879377B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
3760US10840357B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
3858US10468529B2Structure and formation method of semiconductor device structure with etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·0 cites·20 claims
3955US10286364B2Mixed matrix membranes for olefin/paraffin separation and method of making thereofBETTERGY CORP·Filed 2017·Granted May 14, 2019·0 cites·40 claims
4054US10211318B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 19, 2019·0 cites·20 claims
4154US2024014077A1Gate Isolation Regions and Fin Isolation Regions and Method Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4252US11444173B2Semiconductor device structure with salicide layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 13, 2022·0 cites·20 claims
4350US11955370B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·20 claims
4446US9006491B2Structure and method for synthesizing and using dialkyl(2,4,6- or 2,6-alkoxyphenyl)phosphine and its tetrafluoroborateMA SHENGMING·Filed 2009·Granted Apr 14, 2015·0 cites·17 claims
4538US2019071599A1Light emitting nanoparticles and process of making the sameDOW GLOBAL TECHNOLOGIES LLC·Filed 2015·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →