Inventor · disambiguated record
Bong Woong Mun
Also filed as: MUN BONG WOONG
16 granted patents·5 pending applications·16 citations·filing 2020–2024
88Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD21
Top patents by PatentIndex Score
21 records- 0194US11764273B2Semiconductor structures for galvanic isolationGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Sep 19, 2023·3 cites·20 claims
- 0294US11469169B2High voltage decoupling capacitor and integration methodsGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Oct 11, 2022·4 cites·20 claims
- 0392US11257949B2Transistor devices and methods of forming transistor devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
- 0491US12191351B1Laterally-diffused metal-oxide-semiconductor devices with an air gapGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Granted Jan 7, 2025·1 cites·20 claims
- 0587US11791379B2Galvanic isolation using isolation break between redistribution layer electrodesGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Oct 17, 2023·1 cites·17 claims
- 0686US11862693B2Semiconductor devices including a drain captive structure having an air gap and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Jan 2, 2024·2 cites·20 claims
- 0785US12408373B1Device with three dimensional channelGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Granted Sep 2, 2025·1 cites·20 claims
- 0884US12289913B1Device with metal field plate extensionGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Granted Apr 29, 2025·1 cites·19 claims
- 0969US2023361173A1Galvanic isolation using isolation break between redistribution layer electrodesGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 1061US11456306B2Nonvolatile memory device with a metal-insulator-metal (MIM) capacitor in a substrate and integration schemesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Sep 27, 2022·0 cites·16 claims
- 1159US2025248055A1Structure with capacitive junction between silicide layer and electrode and related methodGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Application pending·0 cites
- 1257US11996441B2Semiconductor device for high voltage applicationsGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted May 28, 2024·0 cites·20 claims
- 1355US11955514B2Field-effect transistors with a gate structure in a dual-depth trench isolation structureGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Apr 9, 2024·0 cites·18 claims
- 1455US11791392B2Extended-drain metal-oxide-semiconductor devices with a notched gate electrodeGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 1555US2025015181A1Metal-oxide semiconductor transistorsGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 1654US11658240B2Semiconductor transistors on multi-layered substratesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted May 23, 2023·0 cites·17 claims
- 1752US11538910B2Field-effect transistors of semiconductor devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Dec 27, 2022·0 cites·12 claims
- 1852US2023301087A1Circuit structure and related multi-time programmable (mtp) memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Application pending·0 cites
- 1951US12336220B2Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wellsGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Jun 17, 2025·0 cites·10 claims
- 2051US2023335580A1Electronic device with galvanic isolation and integration methodsGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Application pending·0 cites
- 2149US11502193B2Extended-drain metal-oxide-semiconductor devices with a multiple-thickness buffer dielectric layerGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →