Inventor · disambiguated record

Bo-Feng Young

Also filed as: YOUNG BO-FENG

154 granted patents·45 pending applications·192 citations·filing 2015–2025

99Inventor score

Technology areasH10D H10P H10W G11C H10B

Files withTAIWAN SEMICONDUCTOR MFG CO LTD199

Top patents by PatentIndex Score

199 records

0199US11569250B2Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·6 cites·20 claims
0299US11289603B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·20 claims
0399US11227956B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·11 cites·20 claims
0499US11217494B1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·9 cites·20 claims
0598US11943933B2Ferroelectric memory device using back-end-of-line (BEOL) thin film access transistors and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·3 cites·20 claims
0698US11765892B2Three-dimensional memory device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 19, 2023·3 cites·20 claims
0798US11729986B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·6 cites·20 claims
0898US11515332B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·8 cites·20 claims
0998US11362108B2Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 14, 2022·4 cites·20 claims
1097US12069868B2Gated ferroelectric memory cells for memory cell array and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·2 cites·20 claims
1197US11997855B2Back-end-of-line selector for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 28, 2024·3 cites·20 claims
1297US11990529B2Air gap in inner spacers and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·2 cites·20 claims
1397US11862219B2Memory cell and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 2, 2024·3 cites·20 claims
1497US11791421B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·3 cites·20 claims
1597US11588018B2Semiconductor device structure with nanostructure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·3 cites·20 claims
1697US11587950B2Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 21, 2023·3 cites·12 claims
1797US11444069B23D semiconductor package including memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·3 cites·20 claims
1897US11417750B2Gate air spacer for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·4 cites·20 claims
1997US11309398B2Semiconductor device and manufacturing method for the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·4 cites·20 claims
2096US12058869B2Semiconductor structure with a logic device and a memory device being formed in different levels, and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·2 cites·20 claims
2196US11856785B2Memory array and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
2296US11848370B2Semiconductor device and manufacturing method for the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
2396US11502183B2Air gap in inner spacers and methods of fabricating the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 15, 2022·3 cites·20 claims
2496US11355551B2Multi-level magnetic tunnel junction NOR device with wrap-around gate electrodes and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·3 cites·20 claims
2595US11758736B2Ferroelectric random access memory devices and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·2 cites·20 claims
2695US11450362B2Memory device, integrated circuit device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·4 cites·20 claims
2795US11404570B2Semiconductor devices with embedded ferroelectric field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
2895US10262870B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 16, 2019·13 cites·20 claims
2994US12034045B2Semiconductor device structure with nanostructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·1 cites·20 claims
3094US11901411B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
3193US11915787B2Integrated circuit device and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
3293US11568912B2Memory cell and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·3 cites·20 claims
3393US11469324B2Semiconductor device with negative capacitance structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 11, 2022·2 cites·20 claims
3493US11450686B2High density 3D FERAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
3593US10811516B2Structure and formation method of semiconductor device structure with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 20, 2020·6 cites·20 claims
3693US10269940B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·5 cites·20 claims
3792US10854519B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·6 cites·20 claims
3892US10164050B2Structure and formation method of semiconductor device structure with gate stackTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·7 cites·20 claims
3991US11903189B2Three-dimensional memory and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 13, 2024·2 cites·20 claims
4091US9564528B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·5 cites·20 claims
4190US12324146B2Vertical DRAM structure and method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 3, 2025·1 cites·19 claims
4290US11404444B2Three-dimensional memory device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
4390US11322505B2Ferroelectric random access memory devices and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·2 cites·20 claims
4490US11282945B2Negative-capacitance field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 22, 2022·4 cites·20 claims
4590US9991385B2Enhanced volume control by recess profile controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 5, 2018·8 cites·20 claims
4689US11233130B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·2 cites·20 claims
4788US2025311334A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4887US12477767B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
4987US12396175B2Three-dimensional stackable ferroelectric random access memory devices and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
5087US11508753B2Embedded ferroelectric FinFET memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·2 cites·20 claims

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