Inventor · disambiguated record
Brian S. Doyle
Also filed as: DOYLE BRIAN · DOYLE BRIAN S · KAVALIEROS JACK T
378 granted patents·83 pending applications·14,435 citations·filing 1993–2022
99Inventor score
Top patents by PatentIndex Score
461 records- 0199US7825437B2Unity beta ratio tri-gate transistor static random access memory (SRAM)INTEL CORP·Filed 2007·Granted Nov 2, 2010·166 cites·17 claims
- 0299US7662689B2Strained transistor integration for CMOSINTEL CORP·Filed 2003·Granted Feb 16, 2010·343 cites·34 claims
- 0399US7563701B2Self-aligned contacts for transistorsINTEL CORP·Filed 2005·Granted Jul 21, 2009·235 cites·17 claims
- 0499US7531437B2Method of forming metal gate electrodes using sacrificial gate electrode material and sacrificial gate dielectric materialINTEL CORP·Filed 2006·Granted May 12, 2009·195 cites·10 claims
- 0599US7485536B2Abrupt junction formation by atomic layer epitaxy of in situ delta doped dopant diffusion barriersINTEL CORP·Filed 2005·Granted Feb 3, 2009·155 cites·4 claims
- 0699US7241653B2Nonplanar device with stress incorporation layer and method of fabricationINTEL CORP·Filed 2005·Granted Jul 10, 2007·125 cites·30 claims
- 0799US7105390B2Nonplanar transistors with metal gate electrodesINTEL CORP·Filed 2003·Granted Sep 12, 2006·416 cites·36 claims
- 0899US7037790B2Independently accessed double-gate and tri-gate transistors in same process flowINTEL CORP·Filed 2005·Granted May 2, 2006·141 cites·10 claims
- 0999US6858478B2Tri-gate devices and methods of fabricationINTEL CORP·Filed 2003·Granted Feb 22, 2005·629 cites·3 claims
- 1099US6605498B1Semiconductor transistor having a backfilled channel materialINTEL CORP·Filed 2002·Granted Aug 12, 2003·338 cites·20 claims
- 1199US6423614B1Method of delaminating a thin film using non-thermal techniquesINTEL CORP·Filed 1998·Granted Jul 23, 2002·437 cites·13 claims
- 1299US6281532B1Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineeringINTEL CORP·Filed 1999·Granted Aug 28, 2001·460 cites·19 claims
- 1399US6063688AFabrication of deep submicron structures and quantum wire transistors using hard-mask transistor width definitionINTEL CORP·Filed 1997·Granted May 16, 2000·513 cites·9 claims
- 1498US9472748B2Balancing energy barrier between states in perpendicular magnetic tunnel junctionsINTEL CORP·Filed 2016·Granted Oct 18, 2016·77 cites·20 claims
- 1598US8294180B2CMOS devices with a single work function gate electrode and method of fabricationDOYLE BRIAN S·Filed 2011·Granted Oct 23, 2012·37 cites·14 claims
- 1698US7898041B2Block contact architectures for nanoscale channel transistorsINTEL CORP·Filed 2007·Granted Mar 1, 2011·113 cites·20 claims
- 1798US7745270B2Tri-gate patterning using dual layer gate stackINTEL CORP·Filed 2007·Granted Jun 29, 2010·121 cites·20 claims
- 1898US7569857B2Dual crystal orientation circuit devices on the same substrateINTEL CORP·Filed 2006·Granted Aug 4, 2009·119 cites·4 claims
- 1998US7547637B2Methods for patterning a semiconductor filmINTEL CORP·Filed 2005·Granted Jun 16, 2009·52 cites·8 claims
- 2098US7531393B2Non-planar MOS structure with a strained channel regionINTEL CORP·Filed 2006·Granted May 12, 2009·121 cites·3 claims
- 2198US7479421B2Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made therebyINTEL CORP·Filed 2005·Granted Jan 20, 2009·105 cites·2 claims
- 2298US7449373B2Method of ion implanting for tri-gate devicesINTEL CORP·Filed 2006·Granted Nov 11, 2008·74 cites·19 claims
- 2398US7407847B2Stacked multi-gate transistor design and method of fabricationINTEL CORP·Filed 2006·Granted Aug 5, 2008·99 cites·19 claims
- 2498US7358121B2Tri-gate devices and methods of fabricationINTEL CORP·Filed 2002·Granted Apr 15, 2008·153 cites·15 claims
- 2598US7326656B2Method of forming a metal oxide dielectricINTEL CORP·Filed 2006·Granted Feb 5, 2008·456 cites·19 claims
- 2698US7279375B2Block contact architectures for nanoscale channel transistorsINTEL CORP·Filed 2005·Granted Oct 9, 2007·93 cites·12 claims
- 2798US7268058B2Tri-gate transistors and methods to fabricate sameINTEL CORP·Filed 2004·Granted Sep 11, 2007·164 cites·20 claims
- 2898US7193279B2Non-planar MOS structure with a strained channel regionINTEL CORP·Filed 2005·Granted Mar 20, 2007·76 cites·23 claims
- 2998US7170120B2Carbon nanotube energy well (CNEW) field effect transistorINTEL CORP·Filed 2005·Granted Jan 30, 2007·149 cites·15 claims
- 3098US6909151B2Nonplanar device with stress incorporation layer and method of fabricationINTEL CORP·Filed 2003·Granted Jun 21, 2005·241 cites·31 claims
- 3198US6790704B2Method for capacitively coupling electronic devicesINTEL CORP·Filed 2001·Granted Sep 14, 2004·188 cites·11 claims
- 3298US6696345B2Metal-gate electrode for CMOS transistor applicationsINTEL CORP·Filed 2002·Granted Feb 24, 2004·164 cites·13 claims
- 3398US6563152B2Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channelINTEL CORP·Filed 2000·Granted May 13, 2003·172 cites·12 claims
- 3498US6373111B1Work function tuning for MOSFET gate electrodesINTEL CORP·Filed 1999·Granted Apr 16, 2002·181 cites·13 claims
- 3598US6362082B1Methodology for control of short channel effects in MOS transistorsINTEL CORP·Filed 1999·Granted Mar 26, 2002·309 cites·18 claims
- 3698US6228694B1Method of increasing the mobility of MOS transistors by use of localized stress regionsINTEL CORP·Filed 1999·Granted May 8, 2001·433 cites·24 claims
- 3798US6054370AMethod of delaminating a pre-fabricated transistor layer from a substrate for placement on another waferINTEL CORP·Filed 1998·Granted Apr 25, 2000·297 cites·16 claims
- 3897US8890119B2Vertical nanowire transistor with axially engineered semiconductor and gate metallizationDOYLE BRIAN S·Filed 2012·Granted Nov 18, 2014·31 cites·18 claims
- 3997US7821061B2Silicon germanium and germanium multigate and nanowire structures for logic and multilevel memory applicationsINTEL CORP·Filed 2007·Granted Oct 26, 2010·41 cites·5 claims
- 4097US7820513B2Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabricationINTEL CORP·Filed 2008·Granted Oct 26, 2010·81 cites·3 claims
- 4197US7550333B2Nonplanar device with thinned lower body portion and method of fabricationINTEL CORP·Filed 2006·Granted Jun 23, 2009·50 cites·15 claims
- 4297US7525160B2Multigate device with recessed strain regionsINTEL CORP·Filed 2005·Granted Apr 28, 2009·65 cites·14 claims
- 4397US7494862B2Methods for uniform doping of non-planar transistor structuresINTEL CORP·Filed 2006·Granted Feb 24, 2009·70 cites·10 claims
- 4497US7456476B2Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabricationINTEL CORP·Filed 2003·Granted Nov 25, 2008·222 cites·12 claims
- 4597US7348284B2Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flowINTEL CORP·Filed 2004·Granted Mar 25, 2008·141 cites·10 claims
- 4697US7316949B2Integrating n-type and p-type metal gate transistorsINTEL CORP·Filed 2005·Granted Jan 8, 2008·50 cites·13 claims
- 4797US7183597B2Quantum wire gate device and method of making sameINTEL CORP·Filed 2004·Granted Feb 27, 2007·196 cites·10 claims
- 4897US7005366B2Tri-gate devices and methods of fabricationINTEL CORP·Filed 2004·Granted Feb 28, 2006·121 cites·5 claims
- 4997US6974738B2Nonplanar device with stress incorporation layer and method of fabricationINTEL CORP·Filed 2004·Granted Dec 13, 2005·97 cites·13 claims
- 5097US6653700B2Transistor structure and method of fabricationINTEL CORP·Filed 2002·Granted Nov 25, 2003·144 cites·8 claims
Showing the top 50 of 461 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →