Inventor · disambiguated record
Bradley N. Engel
Also filed as: ENGEL BRADLEY · ENGEL BRADLEY N · ENGEL BRADLEY NEAL · KORKIN LEGAL REPRESENTATIVE AN
50 granted patents·4 pending applications·1,887 citations·filing 1998–2024
99Inventor score
Files withFREESCALE SEMICONDUCTOR INC18EVERSPIN TECHNOLOGIES INC14MOTOROLA INC10STORAGE TECHNOLOGY CORP5ENGEL BRADLEY1
Top patents by PatentIndex Score
54 records- 0198US6545906B1Method of writing to scalable magnetoresistance random access memory elementMOTOROLA INC·Filed 2001·Granted Apr 8, 2003·522 cites·31 claims
- 0297US6654278B1Magnetoresistance random access memoryMOTOROLA INC·Filed 2002·Granted Nov 25, 2003·164 cites·37 claims
- 0397US6633498B1Magnetoresistive random access memory with reduced switching fieldMOTOROLA INC·Filed 2002·Granted Oct 14, 2003·153 cites·23 claims
- 0496US6531723B1Magnetoresistance random access memory for improved scalabilityMOTOROLA INC·Filed 2001·Granted Mar 11, 2003·80 cites·21 claims
- 0595US10281531B2Bipolar chopping for 1/f noise and offset reduction in magnetic field sensorsEVERSPIN TECHNOLOGIES INC·Filed 2016·Granted May 7, 2019·5 cites·20 claims
- 0695US7262069B23-D inductor and transformer devices in MRAM embedded integrated circuitsFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Aug 28, 2007·38 cites·10 claims
- 0795US6430084B1Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layerMOTOROLA INC·Filed 2001·Granted Aug 6, 2002·101 cites·36 claims
- 0895US6351409B1MRAM write apparatus and methodMOTOROLA INC·Filed 2001·Granted Feb 26, 2002·100 cites·36 claims
- 0994US7149106B2Spin-transfer based MRAM using angular-dependent selectivityFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Dec 12, 2006·86 cites·20 claims
- 1092US8242776B2Magnetic sensor design for suppression of barkhausen noiseMATHER PHILLIP G·Filed 2008·Granted Aug 14, 2012·27 cites·8 claims
- 1192US7965077B2Two-axis magnetic field sensor with multiple pinning directionsEVERSPIN TECHNOLOGIES INC·Filed 2008·Granted Jun 21, 2011·22 cites·15 claims
- 1292US6818961B1Oblique deposition to induce magnetic anisotropy for MRAM cellsFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Nov 16, 2004·78 cites·48 claims
- 1391US9910106B2Magnetic field sensor with increased linearityEVERSPIN TECHNOLOGIES INC·Filed 2016·Granted Mar 6, 2018·4 cites·20 claims
- 1491US9519034B2Bipolar chopping for 1/F noise and offset reduction in magnetic field sensorsEVERSPIN TECHNOLOGIES INC·Filed 2014·Granted Dec 13, 2016·5 cites·20 claims
- 1590US10928463B2Bipolar chopping for 1/f noise and offset reduction in magnetic field sensorsEVERSPIN TECHNOLOGIES INC·Filed 2019·Granted Feb 23, 2021·2 cites·20 claims
- 1689US6714446B1Magnetoelectronics information device having a compound magnetic free layerMOTOROLA INC·Filed 2003·Granted Mar 30, 2004·53 cites·19 claims
- 1788US11353520B2Bipolar chopping for 1/f noise and offset reduction in magnetic field sensorsEVERSPIN TECHNOLOGIES INC·Filed 2021·Granted Jun 7, 2022·1 cites·19 claims
- 1888US6909631B2MRAM and methods for reading the MRAMFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jun 21, 2005·47 cites·31 claims
- 1987US6720597B2Cladding of a conductive interconnect for programming a MRAM device using multiple magnetic layersMOTOROLA INC·Filed 2001·Granted Apr 13, 2004·42 cites·15 claims
- 2086US6674618B2Dual element magnetoresistive read head with integral element stabilizationSTORAGE TECHNOLOGY CORP·Filed 2001·Granted Jan 6, 2004·20 cites·2 claims
- 2185US7541804B2Magnetic tunnel junction sensorEVERSPIN TECHNOLOGIES INC·Filed 2005·Granted Jun 2, 2009·11 cites·16 claims
- 2285US6956764B2Method of writing to a multi-state magnetic random access memory cellFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Oct 18, 2005·37 cites·16 claims
- 2384US7129098B2Reduced power magnetoresistive random access memory elementsFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Oct 31, 2006·25 cites·14 claims
- 2483US9291687B2Apparatus and method for sequentially resetting elements of a magnetic sensor arrayEVERSPIN TECHNOLOGIES INC·Filed 2015·Granted Mar 22, 2016·2 cites·24 claims
- 2582US6331773B1Pinned synthetic anti-ferromagnet with oxidation protection layerSTORAGE TECHNOLOGY CORP·Filed 1999·Granted Dec 18, 2001·47 cites·16 claims
- 2681US6760266B2Sense amplifier and method for performing a read operation in a MRAMFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Jul 6, 2004·28 cites·19 claims
- 2780US11733317B2Bipolar chopping for 1/f noise and offset reduction in magnetic field sensorsEVERSPIN TECHNOLOGIES INC·Filed 2022·Granted Aug 22, 2023·0 cites·20 claims
- 2879US7547480B2Magnetic tunnel junction pressure sensors and methodsEVERSPIN TECHNOLOGIES INC·Filed 2005·Granted Jun 16, 2009·12 cites·20 claims
- 2978US8901924B2Apparatus and method for sequentially resetting elements of a magnetic sensor arrayENGEL BRADLEY·Filed 2011·Granted Dec 2, 2014·4 cites·21 claims
- 3078US7235408B2Synthetic antiferromagnetic structure for magnetoelectronic devicesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Jun 26, 2007·5 cites·21 claims
- 3176US12316187B2Electromagnetic actuatorPHYS INSTRUMENTE PI SE & CO KG·Filed 2024·Granted May 27, 2025·0 cites·19 claims
- 3276US6515341B2Magnetoelectronics element having a stressed over-layer configured for alteration of the switching energy barrierMOTOROLA INC·Filed 2001·Granted Feb 4, 2003·22 cites·31 claims
- 3374US7172904B2High sensitivity sensor for tagged magnetic bead bioassaysFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Feb 6, 2007·9 cites·19 claims
- 3473US6956763B2MRAM element and methods for writing the MRAM elementFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Oct 18, 2005·20 cites·33 claims
- 3573US6278594B1Dual element magnetoresistive read head with integral element stabilizationSTORAGE TECHNOLOGY CORP·Filed 1998·Granted Aug 21, 2001·22 cites·24 claims
- 3672US7602177B2Sensor having moveable cladding suspended near a magnetic field sourceEVERSPIN TECHNOLOGIES INC·Filed 2006·Granted Oct 13, 2009·5 cites·12 claims
- 3771US7329935B2Low power magnetoresistive random access memory elementsFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Feb 12, 2008·4 cites·15 claims
- 3871US6967366B2Magnetoresistive random access memory with reduced switching field variationFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Nov 22, 2005·15 cites·12 claims
- 3970US6898112B2Synthetic antiferromagnetic structure for magnetoelectronic devicesFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 24, 2005·9 cites·28 claims
- 4068US6927072B2Method of applying cladding material on conductive lines of MRAM devicesFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted Aug 9, 2005·13 cites·17 claims
- 4168US6888743B2MRAM architectureFREESCALE SEMICONDUCTOR INC·Filed 2002·Granted May 3, 2005·15 cites·23 claims
- 4268US6579625B1Magnetoelectronics element having a magnetic layer formed of multiple sub-element layersMOTOROLA INC·Filed 2000·Granted Jun 17, 2003·12 cites·18 claims
- 4366US8237437B2Two-axis magnetic field sensor with multiple pinning directionsENGEL BRADLEY N·Filed 2011·Granted Aug 7, 2012·2 cites·14 claims
- 4463US10168397B2Magnetic field sensor with increased field linearityEVERSPIN TECHNOLOGIES INC·Filed 2018·Granted Jan 1, 2019·0 cites·20 claims
- 4559US7635903B2Oscillator and method of manufactureEVERSPIN TECHNOLOGIES INC·Filed 2005·Granted Dec 22, 2009·2 cites·22 claims
- 4658US7184300B2Magneto resistance random access memory elementFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Feb 27, 2007·8 cites·43 claims
- 4757US9110123B2Apparatus and method for sequentially resetting elements of a magnetic sensor arrayEVERSPIN TECHNOLOGIES INC·Filed 2014·Granted Aug 18, 2015·0 cites·20 claims
- 4854US2007264727A1High sensitivity sensor for tagged magnetic bead bioassaysFREESCALE SEMICONDUCTOR INC·Filed 2006·Application pending·0 cites
- 4953US8984379B2MRAM field disturb detection and recoveryTHOMAS ANDRE·Filed 2012·Granted Mar 17, 2015·1 cites·20 claims
- 5046US6191917B1Thin film tape write head for dual frequency operationSTORAGE TECHNOLOGY CORP·Filed 1998·Granted Feb 20, 2001·7 cites·18 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →