Inventor · disambiguated record
Bradley T. Moore
Also filed as: MOORE BRADLEY T · MOORE BRADLEY THOMAS · MOORE JR BRADLEY T
46 granted patents·1 pending application·2,076 citations·filing 1993–2018
99Inventor score
Top patents by PatentIndex Score
47 records- 0199US6111260AMethod and apparatus for in situ anneal during ion implantADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 29, 2000·305 cites·19 claims
- 0293US9172199B2Electrical fixture secured to a junction box via a cover plate having an electrical connectorHEATHCO LLC·Filed 2014·Granted Oct 27, 2015·13 cites·10 claims
- 0393US6060345AMethod of making NMOS and PMOS devices with reduced masking stepsADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·114 cites·22 claims
- 0492US9595794B2Electrical fixture secured to a junction box via a cover plate having an electrical connectorHEATHCO LLC·Filed 2015·Granted Mar 14, 2017·10 cites·6 claims
- 0592US5885877AComposite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·107 cites·27 claims
- 0690US5918129AMethod of channel doping using diffusion from implanted polysiliconADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 29, 1999·110 cites·18 claims
- 0789US5930642ATransistor with buried insulative layer beneath the channel regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·104 cites·20 claims
- 0889US5888675AReticle that compensates for radiation-induced lens error in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 30, 1999·68 cites·26 claims
- 0988US5710054AMethod of forming a shallow junction by diffusion from a silicon-based spacerADVANCED MICRO DEVICES INC·Filed 1996·Granted Jan 20, 1998·92 cites·57 claims
- 1087US6259142B1Multiple split gate semiconductor device and fabrication methodADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 10, 2001·67 cites·9 claims
- 1187US5840451AIndividually controllable radiation sources for providing an image pattern in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Nov 24, 1998·61 cites·48 claims
- 1286US5899732AMethod of implanting silicon through a polysilicon gate for punchthrough control of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted May 4, 1999·83 cites·8 claims
- 1385US5930634AMethod of making an IGFET with a multilevel gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·63 cites·48 claims
- 1484US6225151B1Nitrogen liner beneath transistor source/drain regions to retard dopant diffusionADVANCED MICRO DEVICES INC·Filed 1997·Granted May 1, 2001·68 cites·37 claims
- 1584US6201278B1Trench transistor with insulative spacersADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 13, 2001·48 cites·40 claims
- 1683US6080629AIon implantation into a gate electrode layer using an implant profile displacement layerADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 27, 2000·51 cites·38 claims
- 1781US5851891AIGFET method of forming with silicide contact on ultra-thin gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 22, 1998·42 cites·40 claims
- 1880US10865980B1Configurable security lightHEATHCO LLC·Filed 2018·Granted Dec 15, 2020·3 cites·17 claims
- 1980US6166354ASystem and apparatus for in situ monitoring and control of annealing in semiconductor fabricationADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 26, 2000·37 cites·22 claims
- 2079US6197645B1Method of making an IGFET with elevated source/drain regions in close proximity to gate with sloped sidewallsADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 6, 2001·44 cites·18 claims
- 2179US5937299AMethod for forming an IGFET with silicide source/drain contacts in close proximity to a gate with sloped sidewallsADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 10, 1999·44 cites·20 claims
- 2276US6087706ACompact transistor structure with adjacent trench isolation and source/drain regions implanted vertically into trench wallsADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 11, 2000·51 cites·18 claims
- 2376US5801075AMethod of forming trench transistor with metal spacersADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 1, 1998·33 cites·50 claims
- 2472US9905976B1Mounting strap having a connector to connect an electric fixture to a junction boxHEATHCO LLC·Filed 2017·Granted Feb 27, 2018·2 cites·18 claims
- 2572US5976956AMethod of controlling dopant concentrations using transient-enhanced diffusion prior to gate formation in a deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 2, 1999·40 cites·33 claims
- 2672US5885887AMethod of making an igfet with selectively doped multilevel polysilicon gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·32 cites·35 claims
- 2771US5962894ATrench transistor with metal spacersADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 5, 1999·24 cites·40 claims
- 2871US5827761AMethod of making NMOS and devices with sequentially formed gates having different gate lengthsADVANCED MICRO DEVICES INC·Filed 1997·Granted Oct 27, 1998·30 cites·34 claims
- 2970US6380055B2Dopant diffusion-retarding barrier region formed within polysilicon gate layerADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 30, 2002·36 cites·12 claims
- 3070US5837557ASemiconductor fabrication method of forming a master layer to combine individually printed blocks of a circuit patternADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 17, 1998·38 cites·20 claims
- 3166US6689668B1Methods to improve density and uniformity of hemispherical grain silicon layersSAMSUNG AUSTIN SEMICONDUCTOR·Filed 2000·Granted Feb 10, 2004·13 cites·40 claims
- 3265US5427963AMethod of making a MOS device with drain side channel implantADVANCED MICRO DEVICES INC·Filed 1993·Granted Jun 27, 1995·25 cites·20 claims
- 3364US6661057B1Tri-level segmented control transistor and fabrication methodADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 9, 2003·29 cites·15 claims
- 3463US6552776B1Photolithographic system including light filter that compensates for lens errorADVANCED MICRO DEVICES INC·Filed 1998·Granted Apr 22, 2003·20 cites·18 claims
- 3562US6100146AMethod of forming trench transistor with insulative spacersADVANCED MICRO DEVICES INC·Filed 1996·Granted Aug 8, 2000·18 cites·40 claims
- 3661US6188114B1Method of forming an insulated-gate field-effect transistor with metal spacersADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 13, 2001·19 cites·9 claims
- 3761US6030752AMethod of stitching segments defined by adjacent image patterns during the manufacture of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 29, 2000·20 cites·28 claims
- 3859US6146978AIntegrated circuit having an interlevel interconnect coupled to a source/drain region(s) with source/drain region(s) boundary overlap and reduced parasitic capacitanceADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 14, 2000·23 cites·8 claims
- 3958US5877058AMethod of forming an insulated-gate field-effect transistor with metal spacersADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 2, 1999·17 cites·37 claims
- 4054US6048785ASemiconductor fabrication method of combining a plurality of fields defined by a reticle image using segment stitchingADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 11, 2000·19 cites·22 claims
- 4151US5384272AMethod for manufacturing a non-volatile, virtual ground memory elementADVANCED MICRO DEVICES INC·Filed 1994·Granted Jan 24, 1995·13 cites·11 claims
- 4249US6410409B1Implanted barrier layer for retarding upward diffusion of substrate dopantADVANCED MICRO DEVICES INC·Filed 1996·Granted Jun 25, 2002·14 cites·37 claims
- 4346US5723238AInspection of lens error associated with lens heating in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 3, 1998·9 cites·30 claims
- 4442US5918126AMethod of fabricating an integrated circuit having devices arranged with different device densities using a bias differential to form devices with a uniform sizeADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 29, 1999·7 cites·20 claims
- 4539US6096639AMethod of forming a local interconnect by conductive layer patterningADVANCED MICRO DEVICES INC·Filed 1998·Granted Aug 1, 2000·7 cites·18 claims
- 4633US6372588B2Method of making an IGFET using solid phase diffusion to dope the gate, source and drainADVANCED MICRO DEVICES INC·Filed 1997·Granted Apr 16, 2002·3 cites·28 claims
- 4730US2002003273A1Igfet with silicide contact on ultra-thin gateFiled 1998·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →