Inventor · disambiguated record
Brian Roberds
Also filed as: ROBERDS BRIAN · ROBERDS BRIAN E
31 granted patents·4 pending applications·3,008 citations·filing 1994–2022
98Inventor score
Top patents by PatentIndex Score
35 records- 0199US6605498B1Semiconductor transistor having a backfilled channel materialINTEL CORP·Filed 2002·Granted Aug 12, 2003·338 cites·20 claims
- 0299US6281532B1Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineeringINTEL CORP·Filed 1999·Granted Aug 28, 2001·460 cites·19 claims
- 0398US6563152B2Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channelINTEL CORP·Filed 2000·Granted May 13, 2003·172 cites·12 claims
- 0498US6362082B1Methodology for control of short channel effects in MOS transistorsINTEL CORP·Filed 1999·Granted Mar 26, 2002·309 cites·18 claims
- 0598US6228694B1Method of increasing the mobility of MOS transistors by use of localized stress regionsINTEL CORP·Filed 1999·Granted May 8, 2001·433 cites·24 claims
- 0697US6908832B2In situ plasma wafer bonding methodSILICON GENESIS CORP·Filed 2003·Granted Jun 21, 2005·134 cites·37 claims
- 0797US6653700B2Transistor structure and method of fabricationINTEL CORP·Filed 2002·Granted Nov 25, 2003·144 cites·8 claims
- 0897US6180496B1In situ plasma wafer bonding methodSILICON GENESIS CORP·Filed 1998·Granted Jan 30, 2001·249 cites·8 claims
- 0996US6740913B2MOS transistor using mechanical stress to control short channel effectsINTEL CORP·Filed 2001·Granted May 25, 2004·96 cites·16 claims
- 1095US6645828B1In situ plasma wafer bonding methodSILICON GENESIS CORP·Filed 2000·Granted Nov 11, 2003·98 cites·27 claims
- 1194US6620713B2Interfacial layer for gate electrode and high-k dielectric layer and methods of fabricationINTEL CORP·Filed 2002·Granted Sep 16, 2003·80 cites·6 claims
- 1291US6717213B2Creation of high mobility channels in thin-body SOI devicesINTEL CORP·Filed 2001·Granted Apr 6, 2004·37 cites·12 claims
- 1390US6399973B1Technique to produce isolated junctions by forming an insulation layerINTEL CORP·Filed 2000·Granted Jun 4, 2002·51 cites·6 claims
- 1489US6952040B2Transistor structure and method of fabricationINTEL CORP·Filed 2001·Granted Oct 4, 2005·45 cites·8 claims
- 1583US6815310B2Technique to obtain high mobility channels in MOS transistors by forming a strain layer on an underside of a channelINTEL CORP·Filed 2003·Granted Nov 9, 2004·26 cites·16 claims
- 1679US7067386B2Creation of high mobility channels in thin-body SOI devicesINTEL CORP·Filed 2004·Granted Jun 27, 2006·15 cites·12 claims
- 1779US6261878B1Integrated circuit with dynamic threshold voltageINTEL CORP·Filed 1999·Granted Jul 17, 2001·37 cites·15 claims
- 1872US7485541B2Creation of high mobility channels in thin-body SOI devicesINTEL CORP·Filed 2006·Granted Feb 3, 2009·2 cites·6 claims
- 1972US5503704ANitrogen based low temperature direct bondingUNIV CALIFORNIA·Filed 1994·Granted Apr 2, 1996·163 cites·13 claims
- 2071US6656822B2Method for reduced capacitance interconnect system using gaseous implants into the ILDINTEL CORP·Filed 1999·Granted Dec 2, 2003·39 cites·21 claims
- 2170US6638835B2Method for bonding and debonding films using a high-temperature polymerINTEL CORP·Filed 2001·Granted Oct 28, 2003·16 cites·16 claims
- 2268US6518109B2Technique to produce isolated junctions by forming an insulation layerINTEL CORP·Filed 2002·Granted Feb 11, 2003·12 cites·19 claims
- 2367US6642133B2Silicon-on-insulator structure and method of reducing backside drain-induced barrier loweringINTEL CORP·Filed 2001·Granted Nov 4, 2003·12 cites·30 claims
- 2463US6809017B2Interfacial layer for gate electrode and high-k dielectric layer and methods of fabricationINTEL CORP·Filed 2003·Granted Oct 26, 2004·8 cites·13 claims
- 2560US11803011B1Optical switch having latched switch states and associated methodsEAGLE TECH LLC·Filed 2022·Granted Oct 31, 2023·0 cites·22 claims
- 2656US6362078B1Dynamic threshold voltage device and methods for fabricating dynamic threshold voltage devicesINTEL CORP·Filed 1999·Granted Mar 26, 2002·15 cites·30 claims
- 2754US11982883B2Optical device having phase change material and associated methodsEAGLE TECH LLC·Filed 2022·Granted May 14, 2024·0 cites·20 claims
- 2854US7615465B2Creation of high mobility channels in thin-body SOI devicesINTEL CORP·Filed 2006·Granted Nov 10, 2009·0 cites·13 claims
- 2954US6489655B2Integrated circuit with dynamic threshold voltageINTEL CORP·Filed 2001·Granted Dec 3, 2002·5 cites·10 claims
- 3052US2010174648A1Secure real-time business processing systemsINDUSTRYSUITE LLC·Filed 2008·Application pending·0 cites
- 3151US6300221B1Method of fabricating nanoscale structuresINTEL CORP·Filed 1999·Granted Oct 9, 2001·12 cites·24 claims
- 3237US6873013B2Silicon-on-insulator structure and method of reducing backside drain-induced barrier loweringINTEL CORP·Filed 2003·Granted Mar 29, 2005·0 cites·10 claims
- 3335US2004102020A1Method for bonding and debonding films using a high-temperature polymerFiled 2003·Application pending·0 cites
- 3435US2003170424A1Method for bonding and debonding films using a high-temperature polymerFiled 2003·Application pending·0 cites
- 3530US2015121523A1Systems and methods for facilitating remote security threat detectionMSA SECURITY INC·Filed 2013·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →