Inventor · disambiguated record
Brian Romanczyk
Also filed as: ROMANCZYK BRIAN
6 granted patents·5 pending applications·11 citations·filing 2017–2024
73Inventor score
Top patents by PatentIndex Score
11 records- 0191US11557539B1Semiconductor device for RF integrated circuitMONDE WIRELESS INC·Filed 2022·Granted Jan 17, 2023·9 cites·20 claims
- 0274US2025125265A1Semiconductor device for rf integrated circuitMONDE WIRELESS INC·Filed 2024·Application pending·0 cites
- 0372US11101379B2Structure for increasing mobility in a high electron mobility transistorUNIV CALIFORNIA·Filed 2017·Granted Aug 24, 2021·2 cites·23 claims
- 0469US12183676B2Semiconductor device for RF integrated circuitMONDE WIRELESS INC·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
- 0569US11699723B1N-polar III-nitride device structures with a p-type layerMONDE WIRELESS INC·Filed 2022·Granted Jul 11, 2023·0 cites·17 claims
- 0668US2025022948A1N-polar iii-nitride device structures with a p-type layerMONDE WIRELESS INC·Filed 2024·Application pending·0 cites
- 0768US2025056878A1Devices for integrated front-end circuitsMONDE WIRELESS INC·Filed 2024·Application pending·0 cites
- 0860US12132052B2Devices for integrated front-end circuitsMONDE WIRELESS INC·Filed 2022·Granted Oct 29, 2024·0 cites·8 claims
- 0946US2021399121A1Novel approach to controlling linearity in n-polar gan mishemtsUNIV CALIFORNIA·Filed 2021·Application pending·0 cites
- 1044US11594625B2III-N transistor structures with stepped cap layersUNIV CALIFORNIA·Filed 2020·Granted Feb 28, 2023·0 cites·25 claims
- 1143US2022223429A1N-polar iii-n semiconductor device structuresUNIV CALIFORNIA·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →