Inventor · disambiguated record
Brian A. Winstead
Also filed as: WINSTEAD BRIAN A
49 granted patents·3 pending applications·324 citations·filing 2004–2014
98Inventor score
Files withFREESCALE SEMICONDUCTOR INC23WINSTEAD BRIAN A10LOIKO KONSTANTIN V7SHEN JINMIAO J3HONG CHEONG M2
Top patents by PatentIndex Score
52 records- 0194US7795091B2Method of forming a split gate memory device and apparatusWINSTEAD BRIAN A·Filed 2008·Granted Sep 14, 2010·47 cites·16 claims
- 0294US7435639B2Dual surface SOI by lateral epitaxial overgrowthFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 14, 2008·34 cites·20 claims
- 0393US7821055B2Stressed semiconductor device and method for makingFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Oct 26, 2010·37 cites·20 claims
- 0493US7811886B2Split-gate thin film storage NVM cell with reduced load-up/trap-up effectsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 12, 2010·33 cites·18 claims
- 0592US7985649B1Method of making a semiconductor structure useful in making a split gate non-volatile memory cellFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Jul 26, 2011·18 cites·15 claims
- 0688US8163615B1Split-gate non-volatile memory cell having improved overlap tolerance and method thereforWHITE TED R·Filed 2011·Granted Apr 24, 2012·11 cites·17 claims
- 0788US7414877B2Electronic device including a static-random-access memory cell and a process of forming the electronic deviceFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Aug 19, 2008·16 cites·20 claims
- 0887US7420202B2Electronic device including a transistor structure having an active region adjacent to a stressor layer and a process for forming the electronic deviceFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 2, 2008·13 cites·12 claims
- 0980US8035156B2Split-gate non-volatile memory cell and methodFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 11, 2011·8 cites·18 claims
- 1079US7833852B2Source/drain stressors formed using in-situ epitaxial growthFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Nov 16, 2010·8 cites·8 claims
- 1179US7572706B2Source/drain stressor and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 11, 2009·7 cites·15 claims
- 1276US9343314B2Split gate nanocrystal memory integrationLOIKO KONSTANTIN V·Filed 2014·Granted May 17, 2016·4 cites·13 claims
- 1376US7960243B2Method of forming a semiconductor device featuring a gate stressor and semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 14, 2011·4 cites·20 claims
- 1475US7714318B2Electronic device including a transistor structure having an active region adjacent to a stressor layerFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted May 11, 2010·5 cites·20 claims
- 1574US7166897B2Method and apparatus for performance enhancement in an asymmetrical semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Jan 23, 2007·19 cites·24 claims
- 1673US8587039B2Method of forming a semiconductor device featuring a gate stressor and semiconductor deviceWINSTEAD BRIAN A·Filed 2011·Granted Nov 19, 2013·2 cites·19 claims
- 1772US9202930B2Memory with discrete storage elementsLOIKO KONSTANTIN V·Filed 2011·Granted Dec 1, 2015·3 cites·10 claims
- 1872US9111867B2Split gate nanocrystal memory integrationFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Aug 18, 2015·3 cites·14 claims
- 1972US8962416B1Split gate non-volatile memory cellWINSTEAD BRIAN A·Filed 2013·Granted Feb 24, 2015·3 cites·20 claims
- 2072US8390026B2Electronic device including a heterojunction regionWINSTEAD BRIAN A·Filed 2006·Granted Mar 5, 2013·5 cites·20 claims
- 2171US8724399B2Methods and systems for erase biasing of split-gate non-volatile memory cellsWINSTEAD BRIAN A·Filed 2012·Granted May 13, 2014·3 cites·20 claims
- 2270US8766362B2Shallow trench isolation for SOI structures combining sidewall spacer and bottom linerLOIKO KONSTANTIN V·Filed 2012·Granted Jul 1, 2014·2 cites·19 claims
- 2370US8048738B1Method for forming a split gate deviceFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Nov 1, 2011·3 cites·13 claims
- 2470US7488635B2Semiconductor structure with reduced gate doping and methods for forming thereofFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Feb 10, 2009·3 cites·19 claims
- 2568US8236638B2Shallow trench isolation for SOI structures combining sidewall spacer and bottom linerLOIKO KONSTANTIN V·Filed 2007·Granted Aug 7, 2012·3 cites·23 claims
- 2667US7799644B2Transistor with asymmetry for data storage circuitryFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Sep 21, 2010·3 cites·17 claims
- 2766US7468313B2Engineering strain in thick strained-SOI substratesFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Dec 23, 2008·2 cites·20 claims
- 2864US8885403B2Programming a split gate bit cellHONG CHEONG M·Filed 2013·Granted Nov 11, 2014·3 cites·20 claims
- 2964US7923328B2Split gate non-volatile memory cell with improved endurance and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Apr 12, 2011·2 cites·10 claims
- 3064US7608898B2One transistor DRAM cell structureFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 27, 2009·2 cites·15 claims
- 3163US8643123B2Method of making a semiconductor structure useful in making a split gate non-volatile memory cellHONG CHEONG M·Filed 2011·Granted Feb 4, 2014·2 cites·20 claims
- 3263US8283244B2Method for forming one transistor DRAM cell structureBURNETT JAMES D·Filed 2009·Granted Oct 9, 2012·2 cites·18 claims
- 3362US8263463B2Nonvolatile split gate memory cell having oxide growthKANG SUNG-TAEG·Filed 2009·Granted Sep 11, 2012·2 cites·17 claims
- 3462US7923769B2Split gate non-volatile memory cell with improved endurance and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Apr 12, 2011·1 cites·9 claims
- 3561US7960267B2Method for making a stressed non-volatile memory deviceFREESCALE SEMICONDUCTOR INC·Filed 2009·Granted Jun 14, 2011·2 cites·19 claims
- 3660US8679912B2Semiconductor device having different non-volatile memories having nanocrystals of differing densities and method thereforKANG SUNG-TAEG·Filed 2012·Granted Mar 25, 2014·1 cites·20 claims
- 3760US7479422B2Semiconductor device with stressors and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jan 20, 2009·2 cites·7 claims
- 3857US8962410B2Transistors with different threshold voltagesZHANG DA·Filed 2011·Granted Feb 24, 2015·1 cites·17 claims
- 3957US7957190B2Memory having P-type split gate memory cells and method of operationFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Jun 7, 2011·3 cites·20 claims
- 4056US9425055B2Split gate memory cell with a layer of nanocrystals with improved erase performanceWINSTEAD BRIAN A·Filed 2014·Granted Aug 23, 2016·1 cites·15 claims
- 4155US9449713B2Method for preconditioning thin film storage array for data retentionGASQUET HORACIO P·Filed 2012·Granted Sep 20, 2016·1 cites·20 claims
- 4251US2014299935A1Shallow trench isolation for soi structures combining sidewall spacer and bottom linerLOIKO KONSTANTIN V·Filed 2014·Application pending·0 cites
- 4349US9847389B2Semiconductor device including an active region and two layers having different stress characteristicsWINSTEAD BRIAN A·Filed 2013·Granted Dec 19, 2017·0 cites·17 claims
- 4448US9379222B2Method of making a split gate non-volatile memory (NVM) cellWINSTEAD BRIAN A·Filed 2014·Granted Jun 28, 2016·0 cites·19 claims
- 4547US9111908B2Split-gate non-volatile memory cells having improved overlap toleranceWHITE TED R·Filed 2012·Granted Aug 18, 2015·0 cites·11 claims
- 4647US8569858B2Semiconductor device including an active region and two layers having different stress characteristicsWINSTEAD BRIAN A·Filed 2006·Granted Oct 29, 2013·0 cites·22 claims
- 4744US9257445B2Method of making a split gate non-volatile memory (NVM) cell and a logic transistorLOIKO KONSTANTIN V·Filed 2014·Granted Feb 9, 2016·0 cites·20 claims
- 4844US8884358B2Method of making a non-volatile memory (NVM) cell structureWINSTEAD BRIAN A·Filed 2013·Granted Nov 11, 2014·0 cites·17 claims
- 4942US9331160B2Split-gate non-volatile memory cells having gap protection zonesLOIKO KONSTANTIN V·Filed 2013·Granted May 3, 2016·0 cites·14 claims
- 5041US8835295B2Split gate memory device with gap spacerSHEN JINMIAO J·Filed 2013·Granted Sep 16, 2014·0 cites·20 claims
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →