Inventor · disambiguated record

Brian R. York

Also filed as: YORK BRIAN · YORK BRIAN R · YORK BRIAN RODRICK

68 granted patents·20 pending applications·352 citations·filing 1995–2025

98Inventor score

Technology areasG11B H10N G01R G11C H01F

Files withWESTERN DIGITAL TECH INC54 HITACHI GLOBAL STORAGE TECH16 IBM6 HGST Netherlands BV2 MARINERO ERNESTO E2

Top patents by PatentIndex Score

88 records

0198US11532323B1BiSbX (012) layers having increased operating temperatures for SOT and MRAM devicesWESTERN DIGITAL TECH INC·Filed 2021·Granted Dec 20, 2022·21 cites·32 claims
0298US11094338B1SOT film stack for differential readerWESTERN DIGITAL TECH INC·Filed 2020·Granted Aug 17, 2021·27 cites·20 claims
0398US10229723B1Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungstenSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Mar 12, 2019·69 cites·17 claims
0497US11489108B2BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientationWESTERN DIGITAL TECH INC·Filed 2020·Granted Nov 1, 2022·6 cites·27 claims
0597US11127420B1Seed layer for spin torque oscillator in microwave assisted magnetic recording deviceWESTERN DIGITAL TECH INC·Filed 2019·Granted Sep 21, 2021·8 cites·12 claims
0696US12040114B2Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) textureWESTERN DIGITAL TECH INC·Filed 2022·Granted Jul 16, 2024·2 cites·39 claims
0796US11783853B1Topological insulator based spin torque oscillator readerWESTERN DIGITAL TECH INC·Filed 2022·Granted Oct 10, 2023·5 cites·27 claims
0896US11495741B2Bismuth antimony alloys for use as topological insulatorsWESTERN DIGITAL TECH INC·Filed 2020·Granted Nov 8, 2022·15 cites·24 claims
0990US11990163B2Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivityWESTERN DIGITAL TECH INC·Filed 2022·Granted May 21, 2024·2 cites·28 claims
1089US11763973B2Buffer layers and interlayers that promote BiSbx (012) alloy orientation for SOT and MRAM devicesWESTERN DIGITAL TECH INC·Filed 2021·Granted Sep 19, 2023·1 cites·32 claims
1188US7251110B2GMR sensor having layers treated with nitrogen for increased magnetoresistanceHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Jul 31, 2007·9 cites·27 claims
1287US8107202B2Magnetoresistive sensor with novel pinned layer structureLEE WEN-YAUNG·Filed 2008·Granted Jan 31, 2012·9 cites·18 claims
1386US7770282B2Method of making a magnetic sensing device having an insulator structureHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Aug 10, 2010·7 cites·12 claims
1486US2025366376A1Buffer Layers And Interlayers That Promote BiSbx (012) Alloy Orientation For SOT And MRAM DevicesWESTERN DIGITAL TECH INC·Filed 2025·Application pending·0 cites
1585US8988824B1Method for manufacturing a magnetic write pole with a consistent bevel angleHGST Netherlands BV·Filed 2013·Granted Mar 24, 2015·8 cites·12 claims
1685US7833640B2Intermediate tri-layer structure for perpendicular recording mediaHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted Nov 16, 2010·7 cites·30 claims
1784US7722967B2Recording medium comprising laminated underlayer structuresHITACHI GLOBAL STORAGE TECH·Filed 2005·Granted May 25, 2010·6 cites·26 claims
1883US12412597B2Non-localized spin valve multi-free-layer reader hybridized with spin orbit torque layersWESTERN DIGITAL TECH INC·Filed 2023·Granted Sep 9, 2025·1 cites·19 claims
1982US11694713B2BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientationWESTERN DIGITAL TECH INC·Filed 2020·Granted Jul 4, 2023·1 cites·20 claims
2082US7333302B2GMR sensor having an under-layer treated with nitrogen for increased magnetoresistanceHITACHI GLOBAL STORAGE TECH·Filed 2007·Granted Feb 19, 2008·4 cites·22 claims
2181US12394432B2Non-localized spin valve reader hybridized with spin orbit torque layerWESTERN DIGITAL TECH INC·Filed 2023·Granted Aug 19, 2025·1 cites·28 claims
2281US8320232B1Patterned perpendicular magnetic recording medium with multiple magnetic layers and interlayersMARINERO ERNESTO E·Filed 2011·Granted Nov 27, 2012·6 cites·18 claims
2378US11908496B2BiSbX (012) layers having increased operating temperatures for SOT and MRAM devicesWESTERN DIGITAL TECH INC·Filed 2022·Granted Feb 20, 2024·0 cites·25 claims
2478US11682420B2Seed layer for spin torque oscillator in microwave assisted magnetic recording deviceWESTERN DIGITAL TECH INC·Filed 2021·Granted Jun 20, 2023·0 cites·19 claims
2577US7672094B2TMR sensor having an under-layer treated with nitrogen for increased magnetoresistanceHITACHI GLOBAL STORAGE TECH·Filed 2008·Granted Mar 2, 2010·7 cites·16 claims
2677US7190557B2Current-in-the-plane spin valve magnetoresistive sensor with dual metal oxide capping layersHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Mar 13, 2007·11 cites·15 claims
2776US12487296B2Spin orbit torque based thermal sensor for insitu monitoring of magnetic recording headWESTERN DIGITAL TECH INC·Filed 2023·Granted Dec 2, 2025·0 cites·25 claims
2876US12405323B2Magnetic sensor half-bridge based on inverse spin hall effect with reduced thermal driftWESTERN DIGITAL TECH INC·Filed 2023·Granted Sep 2, 2025·0 cites·21 claims
2976US2025014618A1Doping Process To Refine Grain Size For Smoother BiSb Film SurfaceWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
3076US2025054671A1Highly Textured 001 BiSb And Materials for Making SameWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
3175US12176132B2Highly textured 001 BiSb and materials for making sameWESTERN DIGITAL TECH INC·Filed 2022·Granted Dec 24, 2024·0 cites·24 claims
3275US12125512B2Doping process to refine grain size for smoother BiSb film surfaceWESTERN DIGITAL TECH INC·Filed 2022·Granted Oct 22, 2024·0 cites·23 claims
3374US12417782B2Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivityWESTERN DIGITAL TECH INC·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
3474US12408560B2Buffer layers and interlayers that promote BiSbx (012) alloy orientation for sot and MRAM devicesWESTERN DIGITAL TECH INC·Filed 2023·Granted Sep 2, 2025·0 cites·24 claims
3574US12125508B2Topological insulator based spin torque oscillator readerWESTERN DIGITAL TECH INC·Filed 2023·Granted Oct 22, 2024·0 cites·13 claims
3674US8760804B2Substrate nitrogen plasma treatment for softer CoFe main pole writer formationBRINKMAN ELIZABETH A·Filed 2012·Granted Jun 24, 2014·5 cites·23 claims
3774US8611053B2Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with multilayer reference layer including a Heusler alloyBRINKMAN ELIZABETH ANN·Filed 2012·Granted Dec 17, 2013·5 cites·18 claims
3873US12505856B2Highly textured buffer layer to grow YBiPt (110) for spintronic applicationsWESTERN DIGITAL TECH INC·Filed 2024·Granted Dec 23, 2025·0 cites·31 claims
3973US7703194B2Method for creating write element having high magnetic moment Co-Fe-O-N film with soft magnetic propertiesIBM·Filed 2007·Granted Apr 27, 2010·2 cites·18 claims
4073US2025014595A1Topological Insulator Based Spin Torque Oscillator ReaderWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
4171US12482588B2Nitrogen doped oxides for lower bandgapWESTERN DIGITAL TECH INC·Filed 2024·Granted Nov 25, 2025·0 cites·19 claims
4270US5989674AThin film disk with acicular magnetic grainsIBM·Filed 1998·Granted Nov 23, 1999·27 cites·41 claims
4369US12207563B2Magnetoresistive devices comprising a synthetic antiferromagnetic coupling layer of RuAl having a (110) textureWESTERN DIGITAL TECH INC·Filed 2022·Granted Jan 21, 2025·0 cites·32 claims
4469US2025191608A1Non-localized Spin Valve Multi-Free-Layer Reader Hybridized with Spin Orbit Torque LayersWESTERN DIGITAL TECH INC·Filed 2025·Application pending·0 cites
4568US7233458B2High magnetic moment Co-Fe-O-N films with soft magnetic propertiesIBM·Filed 2002·Granted Jun 19, 2007·6 cites·22 claims
4667US12106791B2Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devicesWESTERN DIGITAL TECH INC·Filed 2022·Granted Oct 1, 2024·0 cites·34 claims
4766US7433162B2Magnetoresistive sensor with antiferromagnetic exchange-coupled structure formed by use of chemical-ordering enhancement layerHITACHI GLOBAL STORAGE TECH·Filed 2006·Granted Oct 7, 2008·3 cites·20 claims
4866US2025077834A1In-Memory Deep Neural Network Device Using Spin Orbit Torque (SOT) With Multi-State WeightWESTERN DIGITAL TECH INC·Filed 2024·Application pending·0 cites
4965US7112375B2Seed layer structure for improved crystallographic orientation of a hard magnetic materialHITACHI GLOBAL STORAGE TECH·Filed 2004·Granted Sep 26, 2006·8 cites·9 claims
5064US12106784B2Read sensor with ordered heusler alloy free layer and semiconductor barrier layerWESTERN DIGITAL TECH INC·Filed 2023·Granted Oct 1, 2024·0 cites·21 claims

Showing the top 50 of 88 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →