Inventor · disambiguated record
Burton J. Masters
Also filed as: MASTERS BURTON J
3 granted patents·79 citations·filing 1974–1978
75Inventor score
Technology areasH10P
Files withIBM3
Top patents by PatentIndex Score
3 records- 0180US4137103ASilicon integrated circuit region containing implanted arsenic and germaniumIBM·Filed 1978·Granted Jan 30, 1979·32 cites·3 claims
- 0280US4111719AMinimization of misfit dislocations in silicon by double implantation of arsenic and germaniumIBM·Filed 1976·Granted Sep 5, 1978·32 cites·3 claims
- 0363US3945856AMethod of ion implantation through an electrically insulative materialIBM·Filed 1974·Granted Mar 23, 1976·15 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →