Inventor · disambiguated record
Bunji Mizuno
Also filed as: MIZUNO BUNJI
70 granted patents·35 pending applications·1,023 citations·filing 1987–2015
99Inventor score
Files withPANASONIC CORP39MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27SASAKI YUICHIRO14OKUMURA TOMOHIRO11JIN CHENG-GUO3
Top patents by PatentIndex Score
105 records- 0199US8222128B2Method for introducing impurities and apparatus for introducing impuritiesSASAKI YUICHIRO·Filed 2010·Granted Jul 17, 2012·108 cites·8 claims
- 0295US7601619B2Method and apparatus for plasma processingPANASONIC CORP·Filed 2006·Granted Oct 13, 2009·32 cites·23 claims
- 0395US4912065APlasma doping methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1988·Granted Mar 27, 1990·171 cites·5 claims
- 0494US7358511B2Plasma doping method and plasma doping apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Granted Apr 15, 2008·22 cites·19 claims
- 0594US7348264B2Plasma doping methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Granted Mar 25, 2008·20 cites·12 claims
- 0693US7407874B2Plasma doping methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2006·Granted Aug 5, 2008·18 cites·16 claims
- 0793US4937205APlasma doping process and apparatus thereforMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1988·Granted Jun 26, 1990·160 cites·14 claims
- 0893US4837172AMethod for removing impurities existing in semiconductor substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1987·Granted Jun 6, 1989·120 cites·4 claims
- 0989US7456085B2Method for introducing impuritiesPANASONIC CORP·Filed 2005·Granted Nov 25, 2008·14 cites·10 claims
- 1087US8409939B2Semiconductor device and method for fabricating the sameSASAKI YUICHIRO·Filed 2010·Granted Apr 2, 2013·7 cites·11 claims
- 1186US8536000B2Method for producing a semiconductor device have fin-shaped semiconductor regionsSASAKI YUICHIRO·Filed 2011·Granted Sep 17, 2013·8 cites·14 claims
- 1286US8004045B2Semiconductor device and method for producing the samePANASONIC CORP·Filed 2009·Granted Aug 23, 2011·11 cites·14 claims
- 1385US7741199B2Method for introducing impurities and apparatus for introducing impuritiesPANASONIC CORP·Filed 2008·Granted Jun 22, 2010·6 cites·12 claims
- 1485US7696072B2Method for introduction impurities and apparatus for introducing impuritiesPANASONIC CORP·Filed 2008·Granted Apr 13, 2010·6 cites·6 claims
- 1585US7618883B2Method for introducing impurities and apparatus for introducing impuritiesPANASONIC CORP·Filed 2007·Granted Nov 17, 2009·6 cites·14 claims
- 1684US7709362B2Method for introducing impurities and apparatus for introducing impuritiesPANASONIC CORP·Filed 2005·Granted May 4, 2010·6 cites·10 claims
- 1782US7800165B2Semiconductor device and method for producing the samePANASONIC CORP·Filed 2008·Granted Sep 21, 2010·7 cites·19 claims
- 1882US7754503B2Method for producing semiconductor device and semiconductor producing apparatusPANASONIC CORP·Filed 2008·Granted Jul 13, 2010·7 cites·22 claims
- 1981US9502220B2Plasma processing apparatus and plasma processing methodPANASONIC IP MAN CO LTD·Filed 2015·Granted Nov 22, 2016·3 cites·17 claims
- 2081US8124507B2Semiconductor device and method for fabricating the sameSASAKI YUICHIRO·Filed 2010·Granted Feb 28, 2012·5 cites·9 claims
- 2181US8063437B2Semiconductor device and method for producing the sameSASAKI YUICHIRO·Filed 2008·Granted Nov 22, 2011·8 cites·22 claims
- 2280US7790586B2Plasma doping methodPANASONIC CORP·Filed 2007·Granted Sep 7, 2010·6 cites·22 claims
- 2379US8193080B2Method for fabricating semiconductor device and plasma doping systemSASAKI YUICHIRO·Filed 2010·Granted Jun 5, 2012·4 cites·19 claims
- 2479US7759254B2Method for forming impurity-introduced layer, method for cleaning object to be processed apparatus for introducing impurity and method for producing devicePANASONIC CORP·Filed 2004·Granted Jul 20, 2010·21 cites·24 claims
- 2579US7192854B2Method of plasma dopingMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 20, 2007·22 cites·11 claims
- 2675US7557364B2Charge neutralizing devicePANASONIC CORP·Filed 2005·Granted Jul 7, 2009·4 cites·22 claims
- 2774US7972945B2Plasma doping apparatus and method, and method for manufacturing semiconductor devicePANASONIC CORP·Filed 2008·Granted Jul 5, 2011·4 cites·12 claims
- 2874US7858155B2Plasma processing method and plasma processing apparatusPANASONIC CORP·Filed 2005·Granted Dec 28, 2010·4 cites·33 claims
- 2974US7582492B2Method of doping impurities, and electronic element using the samePANASONIC CORP·Filed 2005·Granted Sep 1, 2009·4 cites·10 claims
- 3073US7365346B2Ion-implanting apparatus, ion-implanting method, and device manufactured therebyMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Apr 29, 2008·9 cites·22 claims
- 3170US8258585B2Semiconductor deviceSASAKI YUICHIRO·Filed 2009·Granted Sep 4, 2012·4 cites·45 claims
- 3270US7863168B2Plasma doping method and plasma doping apparatusPANASONIC CORP·Filed 2006·Granted Jan 4, 2011·2 cites·1 claims
- 3370US7700382B2Impurity introducing method using optical characteristics to determine annealing conditionsPANASONIC CORP·Filed 2004·Granted Apr 20, 2010·10 cites·21 claims
- 3469US4997786AMethod of fabricating a semiconductor device having buried insulation layer separated by ditchesMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1989·Granted Mar 5, 1991·33 cites·2 claims
- 3568US8030187B2Method for manufacturing semiconductor devicePANASONIC CORP·Filed 2008·Granted Oct 4, 2011·2 cites·7 claims
- 3667US7939388B2Plasma doping method and plasma doping apparatusPANASONIC CORP·Filed 2007·Granted May 10, 2011·2 cites·32 claims
- 3767US7932185B2Process for fabricating semiconductor deviceSUMITOMO HEAVY INDUSTRIES·Filed 2005·Granted Apr 26, 2011·2 cites·14 claims
- 3867US7813946B2Television and lifetime estimating method of a televisionPANASONIC CORP·Filed 2001·Granted Oct 12, 2010·1 cites·7 claims
- 3966US7858479B2Method and apparatus of fabricating semiconductor devicePANASONIC CORP·Filed 2005·Granted Dec 28, 2010·2 cites·6 claims
- 4065US8129202B2Plasma doping method and apparatusOKUMURA TOMOHIRO·Filed 2009·Granted Mar 6, 2012·1 cites·21 claims
- 4165US7626184B2Impurity introducing apparatus and impurity introducing methodPANASONIC CORP·Filed 2008·Granted Dec 1, 2009·1 cites·5 claims
- 4265US5436176AMethod for fabricating a semiconductor device by high energy ion implantation while minimizing damage within the semiconductor substrateMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1992·Granted Jul 25, 1995·38 cites·11 claims
- 4362US8105926B2Method for producing a semiconductor device by plasma doping a semiconductor region to form an impurity regionSASAKI YUICHIRO·Filed 2010·Granted Jan 31, 2012·1 cites·12 claims
- 4462US7871853B2Plasma doping method and apparatus employed in the samePANASONIC CORP·Filed 2006·Granted Jan 18, 2011·1 cites·15 claims
- 4562US7199064B2Plasma processing method and apparatusMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted Apr 3, 2007·5 cites·12 claims
- 4661US6217951B1Impurity introduction method and apparatus thereof and method of manufacturing semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Apr 17, 2001·26 cites·26 claims
- 4759US8138582B2Impurity introducing apparatus having feedback mechanism using optical characteristics of impurity introducing regionJIN CHENG-GUO·Filed 2010·Granted Mar 20, 2012·1 cites·10 claims
- 4857US7622725B2Impurity introducing apparatus and impurity introducing methodPANASONIC CORP·Filed 2008·Granted Nov 24, 2009·0 cites·4 claims
- 4956US8404573B2Plasma processing method and apparatusOKUMURA TOMOHIRO·Filed 2012·Granted Mar 26, 2013·0 cites·2 claims
- 5056US5851906AImpurity doping methodMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Dec 22, 1998·21 cites·3 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Bunji Mizuno files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →