Inventor · disambiguated record
Byeong-Ok Cho
Also filed as: CHO BYEONG-OK
17 granted patents·8 pending applications·103 citations·filing 1999–2023
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD15CHO BYEONG-OK2JEON SANG-HUN2WONIK MAT CO LTD2HYUNDAI ELECTRONICS IND1
Top patents by PatentIndex Score
25 records- 0192US7642622B2Phase changeable memory cells and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 5, 2010·24 cites·13 claims
- 0286US7419881B2Phase changeable memory device and method of formation thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 2, 2008·16 cites·20 claims
- 0385US8013366B2Biosensor using nanoscale material as transistor channel and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 6, 2011·14 cites·21 claims
- 0485US7348653B2Resistive memory cell, method for forming the same and resistive memory array using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 25, 2008·16 cites·30 claims
- 0581US7790610B2Methods of manufacturing memory units, and methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 7, 2010·6 cites·20 claims
- 0678US7994581B2CMOS transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 9, 2011·6 cites·11 claims
- 0769US8022410B2Thin film transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·3 cites·15 claims
- 0864US7622379B2Methods of forming metal contact structures and methods of fabricating phase-change memory devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 24, 2009·3 cites·15 claims
- 0962US8227303B2Methods of manufacturing CMOS transistorJEON SANG-HUN·Filed 2011·Granted Jul 24, 2012·1 cites·10 claims
- 1061US8105697B2Polymer memory device and method of forming the sameCHO BYEONG-OK·Filed 2007·Granted Jan 31, 2012·2 cites·12 claims
- 1161US7955869B2Nonvolatile memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jun 7, 2011·3 cites·11 claims
- 1260US12126061B1Ammonia-based solid oxide fuel cell (SOFC) system in which temperature rise using heating element is applied, and operation method thereforWONIK MAT CO LTD·Filed 2022·Granted Oct 22, 2024·0 cites·9 claims
- 1360US7663141B2Organic memory devices including organic material and fullerene layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Feb 16, 2010·4 cites·19 claims
- 1460US2023264963A1Method for fabricating trihalodisilane and method for fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1558US8625110B2Methods of inspecting structuresWOO SEOUK-HOON·Filed 2010·Granted Jan 7, 2014·1 cites·13 claims
- 1648US8586427B2Thin film transistors and methods of manufacturing thin film transistorsJEON SANG-HUN·Filed 2011·Granted Nov 19, 2013·0 cites·11 claims
- 1747US2009209071A1Methods of manufacturing semiconductor devicesSAMSUNG ELECRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1844US8338815B2Memory units and related semiconductor devices including nanowiresLEE MOON-SOOK·Filed 2010·Granted Dec 25, 2012·0 cites·6 claims
- 1943US2009189152A1Ferroelectric memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 2043US2023041936A1Ruthenium precursor, ammonia reaction catalyst using same, and preparation method thereofWONIK MAT CO LTD·Filed 2020·Application pending·0 cites
- 2142US2006076641A1Methods of fabricating phase changeable semiconductor memory devices including multi-plug conductive structures and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 2236US2008083921A1Semiconductor memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2334US2007045615A1Non-volatile organic resistance random access memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2432US2006035429A1Methods of forming phase-change random access memories including a confined contact hole and integrated circuit devices including the sameCHO BYEONG-OK·Filed 2005·Application pending·0 cites
- 2531US6718293B1Etching and growth simulation method using a modified cell modelHYUNDAI ELECTRONICS IND·Filed 1999·Granted Apr 6, 2004·4 cites·28 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →