Inventor · disambiguated record
Byung Jin Cho
Also filed as: CHO BYUNG J · CHO BYUNG JIN
31 granted patents·16 pending applications·403 citations·filing 1995–2025
96Inventor score
Files withKOREA ADVANCED INST SCI & TECH14HYUNDAI ELECTRONICS IND10SK HYNIX INC3UNIV SINGAPORE3CHARTERED SEMICONDUCTOR MFG2
Top patents by PatentIndex Score
47 records- 0194US6897118B1Method of multiple pulse laser annealing to activate ultra-shallow junctionsCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted May 24, 2005·105 cites·38 claims
- 0288US9129811B2Method and board for growing high-quality graphene layer using high pressure annealingKOREA ADVANCED INST SCI & TECH·Filed 2013·Granted Sep 8, 2015·12 cites·10 claims
- 0386US10527494B2Substrate on which multiple nanogaps are formed, and manufacturing method thereforKOREA INST MACH & MATERIALS·Filed 2015·Granted Jan 7, 2020·4 cites·13 claims
- 0486US5559049AMethod of manufacturing a semiconductor deviceHYUNDAI ELECTRONICS INSUSTRIES·Filed 1995·Granted Sep 24, 1996·104 cites·11 claims
- 0581US7316950B2Method of fabricating a CMOS device with dual metal gate electrodesUNIV SINGAPORE·Filed 2004·Granted Jan 8, 2008·29 cites·11 claims
- 0676US5610091AMethod for manufacturing a non-volatile memory cellHYUNDAI ELECTRONICS IND·Filed 1995·Granted Mar 11, 1997·35 cites·3 claims
- 0775US8994079B2Graphene electronic devices having multi-layered gate insulating layerSONG HYUN-JAE·Filed 2012·Granted Mar 31, 2015·5 cites·17 claims
- 0872US8637851B2Graphene device having physical gapCHO BYUNG JIN·Filed 2011·Granted Jan 28, 2014·5 cites·13 claims
- 0970US9472675B2Method of manufacturing n-doped graphene and electrical component using NH4F, and graphene and electrical component therebyKOREA ADVANCED INST SCI & TECH·Filed 2014·Granted Oct 18, 2016·3 cites·14 claims
- 1069US9428829B2Method for growing high-quality graphene layerKOREA ADVANCED INST SCI & TECH·Filed 2013·Granted Aug 30, 2016·1 cites·13 claims
- 1166US2025386525A1Capacitor, method of manufacturing the capacitor, electronic device including the capacitor, and method of manufacturing the electronic deviceSK HYNIX INC·Filed 2025·Application pending·0 cites
- 1264US2025301628A1Gate all around field effect transistor including vertical pillar and fabrication method thereforELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2025·Application pending·0 cites
- 1363US5536667AMethod for forming a gate electrode in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1995·Granted Jul 16, 1996·23 cites·2 claims
- 1462US8638614B2Non-volatile memory device and MOSFET using graphene gate electrodeCHO BYUNG JIN·Filed 2012·Granted Jan 28, 2014·2 cites·18 claims
- 1562US7112499B2Dual step source/drain extension junction anneal to reduce the junction depth: multiple-pulse low energy laser anneal coupled with rapid thermal annealCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted Sep 26, 2006·10 cites·24 claims
- 1661US2025294773A1Dual switching memory device and method of manufacturing the sameKOREA ADVANCED INST SCI & TECH·Filed 2025·Application pending·0 cites
- 1759US5541141AMethod for forming an oxynitride film in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1995·Granted Jul 30, 1996·20 cites·1 claims
- 1858US10147864B2Fe—Ni/Ti metalized skutterudite thermoelectric material and method of manufacturing the sameKOREA INST ENERGY RES·Filed 2017·Granted Dec 4, 2018·0 cites·9 claims
- 1954US12418280B2Static change sense flip-flopKOREA ADVANCED INST SCI & TECH·Filed 2023·Granted Sep 16, 2025·0 cites·2 claims
- 2054US2025294796A1Gate all around field effect transistor having multiple gate stack structure and fabrication method thereforELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2025·Application pending·0 cites
- 2151US2025294758A1Oxide semiconductor memory device with dual channel structure and manufacturing method thereofKOREA ADVANCED INST SCI & TECH·Filed 2025·Application pending·0 cites
- 2251US2025294775A1Semiconductor memory device including ferroelectric capacitor and manufacturing method thereofKOREA ADVANCED INST SCI & TECH·Filed 2025·Application pending·0 cites
- 2350US10247685B2High-temperature structure for measuring properties of curved thermoelectric device, and system and method for measuring properties of curved thermoelectric device using the sameKOREA INST ENERGY RES·Filed 2016·Granted Apr 2, 2019·0 cites·9 claims
- 2449US12279413B2Capacitor for dynamic random access memory, DRAM including the same and methods of fabricating thereofSK HYNIX INC·Filed 2022·Granted Apr 15, 2025·0 cites·18 claims
- 2549US11984513B2Charge trapping non-volatile organic memory deviceKOREA ADVANCED INST SCI & TECH·Filed 2021·Granted May 14, 2024·0 cites·16 claims
- 2643US5940719AMethod for forming element isolating film of semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1997·Granted Aug 17, 1999·10 cites·7 claims
- 2742US9450064B1Semiconductor element, method for fabricating the same, and semiconductor device including the sameSK HYNIX INC·Filed 2015·Granted Sep 20, 2016·0 cites·4 claims
- 2840US10615326B2Flexible thermoelectric systemUNIV YONSEI IACF·Filed 2017·Granted Apr 7, 2020·0 cites·3 claims
- 2940US5985738AMethod for forming field oxide of semiconductor device using wet and dry oxidationHYUNDAI ELECTRONICS IND·Filed 1997·Granted Nov 16, 1999·9 cites·10 claims
- 3040US2019081223A1Self-generation sensor device and self-generation sensor system using the sameKOREA ADVANCED INST SCI & TECH·Filed 2018·Application pending·0 cites
- 3139US2004245602A1Method of fabricating metal-insulator-metal capacitor (MIM) using lanthanide-doped HfO2Filed 2004·Application pending·0 cites
- 3238US6027985AMethod for forming element isolating film of semiconductor deviceHYUNDAI ELECTRONICS IND CO INC·Filed 1999·Granted Feb 22, 2000·7 cites·10 claims
- 3338US2019318978A1Flexible heat sink for thermoelectric device and flexible thermoelectric device containing itKOREA ADVANCED INST SCI & TECH·Filed 2019·Application pending·0 cites
- 3437US5499602AApparatus for manfuacturing a semiconductor layer using rapid thermal processingHYUNDAI ELECTRONICS IND·Filed 1995·Granted Mar 19, 1996·6 cites·6 claims
- 3537US2018277362A1Method of Surface Localized Pore Sealing of Porous Dielectric MaterialLAM RES CORP·Filed 2018·Application pending·0 cites
- 3637US2011189406A1Method of forming graphene layerKOREA ADVANCED INST SCI & TECH·Filed 2010·Application pending·0 cites
- 3736US10535514B2Method of sealing open pores on surface of porous dielectric material using iCVD processKOREA ADVANCED INST SCI & TECH·Filed 2016·Granted Jan 14, 2020·0 cites·8 claims
- 3836US2016270237A1Copper Interconnect Device Including Surface Functionalized Graphene Capping Layer and Fabrication Method ThereofLAM RES CORP·Filed 2016·Application pending·0 cites
- 3936US2006273410A1Thermally stable fully silicided Hf silicide metal gate electrodeUNIV SINGAPORE·Filed 2005·Application pending·0 cites
- 4035US6153481AMethod for forming an isolation insulating film for internal elements of a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1998·Granted Nov 28, 2000·5 cites·13 claims
- 4135US2018233648A1Flexible thermoelectric elelment and production method thereforKOREA ADVANCED INST SCI & TECH·Filed 2016·Application pending·0 cites
- 4235US2016056360A1Flexible Thermoelectric Device Using Mesh Type Substrate and Manufacturing Method ThereofKOREA ADVANCED INST SCI & TECH·Filed 2014·Application pending·0 cites
- 4334US5719086AMethod for isolating elements of semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1996·Granted Feb 17, 1998·5 cites·11 claims
- 4430USRE37960EMethod for forming an oxynitride film in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 1997·Granted Jan 7, 2003·1 cites·40 claims
- 4530US6013561AMethod for forming field oxide film of semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1997·Granted Jan 11, 2000·1 cites·15 claims
- 4630US5846887AMethod for removing defects by ion implantation using medium temperature oxide layerHYUNDAI ELECTRONICS IND·Filed 1996·Granted Dec 8, 1998·1 cites·21 claims
- 4729US2008217678A1Memory Gate Stack StructureUNIV SINGAPORE·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →