Inventor · disambiguated record
Byeong-In Choe
Also filed as: CHOE BYEONG-IN
22 granted patents·4 pending applications·216 citations·filing 2007–2016
96Inventor score
Top patents by PatentIndex Score
26 records- 0197US9136005B2Erasing methods of three-dimensional nonvolatile memory devices with cell strings and dummy word linesCHOE BYEONG-IN·Filed 2013·Granted Sep 15, 2015·43 cites·17 claims
- 0294US8576629B2Operating method of nonvolatile memory deviceCHOE BYEONG-IN·Filed 2011·Granted Nov 5, 2013·21 cites·20 claims
- 0392US8916926B2Nonvolatile memory device and method of making the sameCHOE BYEONG-IN·Filed 2011·Granted Dec 23, 2014·17 cites·16 claims
- 0489US8699274B2Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasureSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Apr 15, 2014·9 cites·6 claims
- 0589US8513729B2Vertical structure nonvolatile memory devicesCHOE BYEONG-IN·Filed 2011·Granted Aug 20, 2013·10 cites·20 claims
- 0688US8724394B2Nonvolatile memory device and operating method thereofCHOE BYEONG-IN·Filed 2011·Granted May 13, 2014·10 cites·17 claims
- 0788US7812375B2Non-volatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 12, 2010·13 cites·19 claims
- 0886US9564237B2Nonvolatile memory device and read method thereofLEE CHANGHYUN·Filed 2015·Granted Feb 7, 2017·6 cites·5 claims
- 0986US8059466B2Memory system and programming method thereofLEE CHANGHYUN·Filed 2010·Granted Nov 15, 2011·10 cites·20 claims
- 1085US8737129B2Nonvolatile memory device and read method thereofLEE CHANGHYUN·Filed 2012·Granted May 27, 2014·7 cites·4 claims
- 1184US9558834B2Nonvolatile memory device and an erasing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 31, 2017·7 cites·20 claims
- 1284US8644074B2Nonvolatile memory device, programming method thereof and memory system including the sameCHANG SUNG-IL·Filed 2011·Granted Feb 4, 2014·10 cites·20 claims
- 1384US8315103B2Flash memory device and operating method for concurrently applying different bias voltages to dummy memory cells and regular memory cells during erasureLEE CHANG-HYUN·Filed 2011·Granted Nov 20, 2012·7 cites·8 claims
- 1483US8599622B2Charge trap flash memory device and an erasing method thereofKIM JUHYUNG·Filed 2011·Granted Dec 3, 2013·13 cites·16 claims
- 1582US8877591B2Methods of manufacturing vertical structure nonvolatile memory devicesCHOE BYEONG-IN·Filed 2013·Granted Nov 4, 2014·6 cites·20 claims
- 1681US9224493B2Nonvolatile memory device and read method thereofLEE CHANGHYUN·Filed 2014·Granted Dec 29, 2015·5 cites·4 claims
- 1780US7867883B2Methods of fabricating non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jan 11, 2011·7 cites·13 claims
- 1879US9548123B2Operating methods of nonvolatile memory devices including a ground select transistor and first and second dummy memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 17, 2017·4 cites·20 claims
- 1972US8446773B2Memory system and programming method thereofLEE CHANGHYUN·Filed 2011·Granted May 21, 2013·4 cites·20 claims
- 2068US8804417B2Nonvolatile memory device including dummy memory cell and program method thereofPARK CHAN·Filed 2011·Granted Aug 12, 2014·5 cites·5 claims
- 2166US8772857B2Vertical memory devices and methods of manufacturing the sameCHOE BYEONG-IN·Filed 2011·Granted Jul 8, 2014·2 cites·19 claims
- 2251US9991275B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 5, 2018·0 cites·22 claims
- 2344US2012003828A1Semiconductor memory device and method of forming the sameCHANG SUNG-IL·Filed 2011·Application pending·0 cites
- 2444US2011079838A1Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 2544US2013301350A1Vertical Structure Nonvolatile Memory DeviceCHOE BYEONG-IN·Filed 2013·Application pending·0 cites
- 2633US2011205802A1Nonvolatile memory device and method of reading the sameSAMSUNG ELECTRONICS CO LTD·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →