Inventor · disambiguated record
Byung-Gil Choi
Also filed as: CHOI BYUNG KEOL · CHOI BYUNG-GIL
73 granted patents·3 pending applications·805 citations·filing 2000–2011
99Inventor score
Top patents by PatentIndex Score
76 records- 0198US7808815B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 5, 2010·72 cites·9 claims
- 0297US7643344B2Variable resistive memorySAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 5, 2010·53 cites·10 claims
- 0396US8077496B2Nonvolatile memory device and method of driving the sameCHOI BYUNG-GIL·Filed 2009·Granted Dec 13, 2011·47 cites·20 claims
- 0494US8139432B2Variable resistance memory device and system thereofCHOI BYUNG-GIL·Filed 2010·Granted Mar 20, 2012·21 cites·19 claims
- 0593US6885602B2Programming method of controlling the amount of write current applied to phase change memory device and write driver circuit thereforSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 26, 2005·64 cites·26 claims
- 0692US8081501B2Multi-level nonvolatile memory device using variable resistive elementCHOI BYUNG-GIL·Filed 2009·Granted Dec 20, 2011·26 cites·17 claims
- 0792US7450415B2Phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 11, 2008·24 cites·27 claims
- 0892US7391644B2Phase-changeable memory device and read method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 24, 2008·29 cites·22 claims
- 0992US7227776B2Phase change random access memory (PRAM) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 5, 2007·24 cites·20 claims
- 1091US7315469B2Control of set/reset pulse in response to peripheral temperature in PRAM deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 1, 2008·21 cites·20 claims
- 1191US7274586B2Method for programming phase-change memory array to set state and circuit of a phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 25, 2007·26 cites·24 claims
- 1291US7110286B2Phase-change memory device and method of writing a phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 19, 2006·55 cites·48 claims
- 1390US7502251B2Phase-change memory device and method of writing a phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 10, 2009·23 cites·24 claims
- 1488US7633788B2Variable resistive memory wordline switchSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 15, 2009·16 cites·16 claims
- 1587US8182263B2Heat treatment equipmentCHOI BYUNG GIL·Filed 2007·Granted May 22, 2012·6 cites·2 claims
- 1686US7405965B2Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 29, 2008·17 cites·17 claims
- 1786US7214963B23-D column select circuit layout in semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 8, 2007·12 cites·30 claims
- 1885US7447092B2Write driver circuit for controlling a write current applied to a phase change memory based on an ambient temperatureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 4, 2008·15 cites·11 claims
- 1979US7821865B2Nonvolatile memory device using variable resistive elementsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 26, 2010·6 cites·19 claims
- 2079US7242605B2Phase-change memory device and method that maintains the resistance of a phase-change material in a reset state within a constant resistance rangeSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 10, 2007·26 cites·5 claims
- 2178US7978539B2Semiconductor device having resistance based memory array, method of reading, and systems associated therewithSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 12, 2011·10 cites·40 claims
- 2277US8023320B2Resistance-change random access memory device including memory cells connected to discharge elementsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·10 cites·12 claims
- 2377US7961508B2Phase-change random access memorySAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jun 14, 2011·3 cites·12 claims
- 2476US7511993B2Phase change memory device and related programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 31, 2009·9 cites·17 claims
- 2576US7474556B2Phase-change random access memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 6, 2009·10 cites·20 claims
- 2675US7499316B2Phase change memory devices and program methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 3, 2009·9 cites·11 claims
- 2775US7463511B2Phase change memory device using multiprogramming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 9, 2008·9 cites·15 claims
- 2874US7453722B2Phase change memory device and memory cell array thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 18, 2008·9 cites·20 claims
- 2973US7570530B2Nonvolatile memory device using variable resistive elementSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 4, 2009·8 cites·20 claims
- 3072US8040714B2Multilevel nonvolatile memory device using variable resistanceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·7 cites·13 claims
- 3171US8199603B2Nonvolatile memory devices having variable-resistance memory cells and methods of programming the sameCHUNG WON-RYUL·Filed 2009·Granted Jun 12, 2012·10 cites·19 claims
- 3271US7796425B2Control of set/reset pulse in response to peripheral temperature in PRAM deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 14, 2010·6 cites·19 claims
- 3370US7835199B2Nonvolatile memory using resistance materialSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 16, 2010·7 cites·16 claims
- 3469US8213254B2Nonvolatile memory device with temperature controlled column selection signal levelsCHOI BYUNG-GIL·Filed 2009·Granted Jul 3, 2012·6 cites·20 claims
- 3569US7573766B2Phase change random access memory and method of testing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 11, 2009·7 cites·22 claims
- 3668US8098518B2Nonvolatile memory device using variable resistive elementKIM HYE-JIN·Filed 2009·Granted Jan 17, 2012·6 cites·20 claims
- 3768US7974118B2Resistance variable memory device reducing word line voltageSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jul 5, 2011·3 cites·16 claims
- 3868US7830699B2Resistance variable memory device reducing word line voltageSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 9, 2010·5 cites·7 claims
- 3967US7613037B2Phase-change memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 3, 2009·7 cites·23 claims
- 4066US7885098B2Non-volatile phase-change memory device and method of reading the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 8, 2011·6 cites·36 claims
- 4165US7929337B2Phase-change random access memories capable of suppressing coupling noise during read-while-write operationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 19, 2011·5 cites·12 claims
- 4265US7808817B2Nonvolatile memory device using resistive elements and an associated driving methodSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 5, 2010·5 cites·20 claims
- 4364US7817479B2Nonvolatile memory device using a variable resistive element and associated operating methodSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 19, 2010·5 cites·20 claims
- 4464US7426129B2Layout structures in semiconductor memory devices including bit line layout for higher density migrationSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 16, 2008·5 cites·13 claims
- 4564US7075848B2Redundancy circuit in semiconductor memory device having a multiblock structureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 11, 2006·12 cites·13 claims
- 4662US8243508B2Resistive memory devices using assymetrical bitline charging and dischargingCHOI BYUNG-GIL·Filed 2011·Granted Aug 14, 2012·2 cites·12 claims
- 4761US8023319B2Phase change memorySAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·4 cites·19 claims
- 4861US8004925B2Variable resistive memorySAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 23, 2011·3 cites·8 claims
- 4961US7668007B2Memory system including a resistance variable memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 23, 2010·4 cites·8 claims
- 5059US8009476B2Semiconductor memory device using variable resistorSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 30, 2011·3 cites·10 claims
Showing the top 50 of 76 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →