Inventor · disambiguated record
Byung Soo Eun
Also filed as: EUN BYUNG S · EUN BYUNG SOO
30 granted patents·6 pending applications·118 citations·filing 1993–2013
96Inventor score
Top patents by PatentIndex Score
36 records- 0186US7902037B2Isolation structure in memory device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Mar 8, 2011·14 cites·7 claims
- 0285US7994561B2Semiconductor device for preventing the leaning of storage nodesHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Aug 9, 2011·9 cites·5 claims
- 0384US7713887B2Method for forming isolation layer in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted May 11, 2010·12 cites·7 claims
- 0484US7482246B2Trench isolation structure in a semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Jan 27, 2009·11 cites·12 claims
- 0582US7923343B2Capacitor of semiconductor device and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Apr 12, 2011·9 cites·20 claims
- 0680US7919390B2Isolation structure in memory device and method for fabricating the isolation structureHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Apr 5, 2011·8 cites·10 claims
- 0776US9018708B2Semiconductor device and method for fabricating the sameSK HYNIX INC·Filed 2012·Granted Apr 28, 2015·4 cites·17 claims
- 0875US7968948B2Trench isolation structure in a semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 28, 2011·5 cites·6 claims
- 0973US7276725B2Bit line barrier metal layer for semiconductor device and process for preparing the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Oct 2, 2007·3 cites·5 claims
- 1072US9437423B2Method for fabricating an inter dielectric layer in semiconductor deviceSK HYNIX INC·Filed 2013·Granted Sep 6, 2016·2 cites·10 claims
- 1171US7989287B2Method for fabricating storage node electrode in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2010·Granted Aug 2, 2011·3 cites·13 claims
- 1271US7442990B2Semiconductor device having a recess channel and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Oct 28, 2008·3 cites·3 claims
- 1367US8592326B2Method for fabricating an inter dielectric layer in semiconductor deviceEUN BYUNG SOO·Filed 2007·Granted Nov 26, 2013·2 cites·9 claims
- 1466US8211779B2Method for forming isolation layer in semiconductor deviceEUN BYUNG-SOO·Filed 2007·Granted Jul 3, 2012·3 cites·14 claims
- 1566US8003489B2Method for forming isolation layer in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Aug 23, 2011·3 cites·16 claims
- 1666US7754561B2Method for fabricating isolation film in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jul 13, 2010·3 cites·10 claims
- 1766US7737017B2Semiconductor device having recess gate and isolation structure and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 15, 2010·3 cites·20 claims
- 1865US7879733B2Method for manufacturing semiconductor device free from layer-lifting between insulating layersHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Feb 1, 2011·2 cites·6 claims
- 1964US8114733B2Semiconductor device for preventing the leaning of storage nodes and method for manufacturing the sameKIM HUN·Filed 2011·Granted Feb 14, 2012·1 cites·10 claims
- 2063US7932168B2Method for fabricating bitline in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Apr 26, 2011·2 cites·9 claims
- 2161US7736972B2Method for forming storage electrode of semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 15, 2010·2 cites·17 claims
- 2261USD352285SPortable communication receiverMOTOROLA INC·Filed 1993·Granted Nov 8, 1994·12 cites·1 claims
- 2355US7435670B2Bit line barrier metal layer for semiconductor device and process for preparing the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Oct 14, 2008·0 cites·6 claims
- 2454US7618885B2Semiconductor device having a recess channel and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Nov 17, 2009·0 cites·4 claims
- 2549US7910480B2Method for insulating wires of semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Mar 22, 2011·0 cites·11 claims
- 2648US8105497B2Method for fabricating cylinder type capacitorEUN BYUNG SOO·Filed 2009·Granted Jan 31, 2012·0 cites·4 claims
- 2747US7652323B2Semiconductor device having step gates and method of manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Jan 26, 2010·0 cites·4 claims
- 2847US7153771B2Method for forming metal contact in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Dec 26, 2006·2 cites·9 claims
- 2947US2012270380A1Method for forming isolation layer in semiconductor deviceEUN BYUNG SOO·Filed 2012·Application pending·0 cites
- 3047US2009004839A1Method for fabricating an interlayer dielectric in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 3146US8169048B2Isolation structure in a memory deviceEUN BYUNG SOO·Filed 2011·Granted May 1, 2012·0 cites·1 claims
- 3245US2008254593A1Method for Fabricating Isolation Layer in Semiconductor DeviceHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 3344US7537995B2Method for fabricating a dual poly gate in semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted May 26, 2009·0 cites·5 claims
- 3444US2008067685A1Semiconductor Device Manufacturing MethodHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 3543US2010124807A1Method of manufacturing semiconductor device having step gatesHYNIX SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
- 3641US2007026616A1Method for fabricating semiconductor device and semiconductor device fabricated using the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →