Inventor · disambiguated record

Byounghak Hong

Also filed as: HONG BYOUNGHAK

42 granted patents·19 pending applications·39 citations·filing 2020–2025

96Inventor score

Technology areasH10D H10W H10P B82Y

Files withSAMSUNG ELECTRONICS CO LTD61

Top patents by PatentIndex Score

61 records

0196US11670677B2Crossing multi-stack nanosheet structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 6, 2023·6 cites·20 claims
0296US11502167B2Semiconductor device having stepped multi-stack transistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 15, 2022·4 cites·20 claims
0395US11881455B2Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 23, 2024·5 cites·8 claims
0493US12170322B2Devices including stacked nanosheet transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 17, 2024·2 cites·20 claims
0593US12125788B2Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 22, 2024·2 cites·11 claims
0693US12051697B2Integrated circuit devices including stacked gate structures with different dimensionsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 30, 2024·2 cites·9 claims
0792US12356665B2Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 8, 2025·2 cites·18 claims
0892US11282928B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 22, 2022·3 cites·15 claims
0991US11735585B2Stacked semiconductor device having mirror-symmetric patternSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·16 claims
1091US11664433B2Integrated circuit devices including stacked transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 30, 2023·2 cites·19 claims
1190US12230571B2Integrated circuit devices including a power rail and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 18, 2025·3 cites·14 claims
1290US11605708B2Integrated circuit devices including a vertical field-effect transistor and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 14, 2023·2 cites·19 claims
1388US12040327B2Three-dimensional semiconductor device having vertical misalignmentSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 16, 2024·1 cites·20 claims
1487US11764207B2Diode structures of stacked devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 19, 2023·1 cites·20 claims
1586US11355640B1Hybrid multi-stack semiconductor device including self-aligned channel structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 7, 2022·1 cites·20 claims
1685US12464818B2Three-dimensional semiconductor device having vertical misalignmentSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
1785US11901363B2Resistance measuring structures of stacked devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·18 claims
1876US12274092B2Resistance measuring structures of stacked devicesSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Apr 8, 2025·0 cites·20 claims
1975US2025107201A1Selective single diffusion/electrical barrierSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2074US12310106B2Devices including stacked nanosheet transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 20, 2025·0 cites·8 claims
2174US2025031360A1Selective double diffusion break structures for multi-stack semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2274US2025107172A1Multi-stack semiconductor device with zebra nanosheet structureSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2374US2025311304A1Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
2474US2024355824A1Integrated circuit devices including stacked gate structures with different dimensionsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2573US12094869B2Diode structures of stacked devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
2673US2025063765A1Devices including stacked nanosheet transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2771US12087815B2Crossing multi-stack nanosheet structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 10, 2024·0 cites·11 claims
2871US12057448B2Stacked semiconductor device having mirror-symmetric patternSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 6, 2024·0 cites·4 claims
2968US12376352B2Integrated circuit devices including a vertical field-effect transistor and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·7 claims
3068US11935922B2Semiconductor device having stepped multi-stack transistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·14 claims
3168US2025201714A13d stacked chip that shares power railsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
3267US12272647B23D stacked chip that shares power railsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·11 claims
3367US12199152B2Selective single diffusion/electrical barrierSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 14, 2025·0 cites·8 claims
3467US12183786B2Multi-stack semiconductor device with zebra nanosheet structureSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·6 claims
3567US2025338541A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
3665US11728388B2Method for manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
3765US11688742B2Different diffusion break structures for three-dimensional stacked semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·12 claims
3861US12144163B2Selective double diffusion break structures for multi-stack semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 12, 2024·0 cites·19 claims
3961US11843001B2Devices including stacked nanosheet transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·13 claims
4060US12317588B2Step-stacked nanowire CMOS structure for low power logic device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 27, 2025·0 cites·18 claims
4157US12490502B2Bipolar junction transistors and P-N junction diodes including stacked nano-semiconductor layersSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
4257US12477791B2Semiconductor device having hybrid channel structureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 18, 2025·0 cites·17 claims
4357US12249603B2Resistor structures of integrated circuit devices including stacked transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
4457US12243946B2Integrated circuit devices including a common gate electrode and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 4, 2025·0 cites·20 claims
4556US12317582B2Integrated circuit devices including a metal resistor and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 27, 2025·0 cites·20 claims
4655US12224314B2Size-controllable multi-stack semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 11, 2025·0 cites·20 claims
4754US12255099B2Methods of forming fin-on-nanosheet transistor stacksSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 18, 2025·0 cites·19 claims
4854US2023420459A1Integrated circuit devices including metallic source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
4954US2024023326A1Multi-stack nanosheet structure including semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
5053US12211760B2Integrated circuit devices including a parameter measuring structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jan 28, 2025·0 cites·20 claims

Showing the top 50 of 61 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →