Inventor · disambiguated record
Byung Keun Hwang
Also filed as: HWANG BYUNG JOON · HWANG BYUNG K · HWANG BYUNG KEUN
14 granted patents·12 pending applications·344 citations·filing 1995–2023
93Inventor score
Top patents by PatentIndex Score
26 records- 0190US6667553B2H:SiOC coated substratesDOW CORNING·Filed 2001·Granted Dec 23, 2003·57 cites·12 claims
- 0287US10049882B1Method for fabricating semiconductor device including forming a dielectric layer on a structure having a height difference using ALDSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 14, 2018·6 cites·20 claims
- 0383US6057251AMethod for forming interlevel dielectric layer in semiconductor device using electron beamsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted May 2, 2000·67 cites·19 claims
- 0482US6372672B1Method of forming a silicon nitride layer in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Apr 16, 2002·28 cites·20 claims
- 0581US5989983AMethod of fabricating and curing spin-on-glass layers by electron beam irradiationSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Nov 23, 1999·64 cites·27 claims
- 0678US6593248B2Method for producing hydrogenated silicon oxycarbide films having low dielectric constantDOW CORNING·Filed 2002·Granted Jul 15, 2003·22 cites·21 claims
- 0765US2023211456A1Polishing pad for chemical mechanical polishing, chemical mechanical polishing apparatus inluding the same, and method of fabricating semiconductor device using the chemical mechanical polishing apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 0864US5629238AMethod for forming conductive line of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted May 13, 1997·31 cites·14 claims
- 0961US6337282B2Method for forming a dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jan 8, 2002·27 cites·7 claims
- 1060US2023264963A1Method for fabricating trihalodisilane and method for fabricating semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1159US7189664B2Method for producing hydrogenated silicon-oxycarbide filmsDOW CORNING·Filed 2004·Granted Mar 13, 2007·3 cites·23 claims
- 1257US2024093360A1Compositions and methods using same for films comprising silicon and boronVERSUM MAT US LLC·Filed 2022·Application pending·0 cites
- 1355US6984594B2Deposition method of insulating layers having low dielectric constant of semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 10, 2006·2 cites·6 claims
- 1455US6117785AMultiple etch methods for forming contact holes in microelectronic devices including SOG layers and capping layers thereonSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Sep 12, 2000·21 cites·10 claims
- 1554US12500079B2Semiconductor device manufacturing methodSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·18 claims
- 1654US2023193080A1Slurry compositions for polishing metal layers, chemical mechanical polishing apparatuses using the same, and methods for fabricating semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1748US2014225030A1Method of controlling the crystallinity of a silicon powderHEMLOCK SEMICONDUCTOR CORP·Filed 2014·Application pending·0 cites
- 1847US5866476AMethods for forming moisture blocking layersSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Feb 2, 1999·16 cites·23 claims
- 1946US2004166692A1Method for producing hydrogenated silicon oxycarbide filmsLOBODA MARK JON·Filed 2003·Application pending·0 cites
- 2046US2004220127A1Methods and compositions relating to 5'-chimeric ribonucleic acidsFiled 2003·Application pending·0 cites
- 2145US2011155956A1Fibers Including Nanoparticles And A Method Of Producing The NanoparticlesASHRAF MUHAMMAD ATHER·Filed 2009·Application pending·0 cites
- 2244US10597495B2Aged polymeric silsesquioxanesDOW SILICONES CORP·Filed 2017·Granted Mar 24, 2020·0 cites·15 claims
- 2342US2009032901A1Method of curing hydrogen silsesquioxane and densification in nano-scale trenchesCHEN WEI·Filed 2006·Application pending·0 cites
- 2440US2006158101A1Organic light-emitting diodeDOW CORNING·Filed 2004·Application pending·0 cites
- 2535US2014220347A1Electrode composition comprising a silicon powder and method of controlling the crystallinity of a silicon powderDEHTIAR MAX·Filed 2012·Application pending·0 cites
- 2632US2003148019A1Compositions and methods for forming dielectric layers using a colloidFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →