Inventor · disambiguated record
Byeung Chul Kim
Also filed as: KIM BYEUNG CHUL
30 granted patents·6 pending applications·116 citations·filing 1995–2024
95Inventor score
Files withMICRON TECHNOLOGY INC20SAMSUNG ELECTRONICS CO LTD10LODESTAR LICENSING GROUP LLC3KIM BYEUNG CHUL1KIM DEOK-KEE1
Top patents by PatentIndex Score
36 records- 0196US11037956B2Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 15, 2021·4 cites·24 claims
- 0295US10777576B1Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 15, 2020·12 cites·48 claims
- 0391US10770465B1Method used in forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2019·Granted Sep 8, 2020·7 cites·34 claims
- 0488US11672118B2Electronic devices comprising adjoining oxide materials and related systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 6, 2023·2 cites·17 claims
- 0588US11081497B2Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 3, 2021·4 cites·30 claims
- 0687US8468692B2Method of manufacturing a variable resistance memory deviceKIM BYEUNG CHUL·Filed 2011·Granted Jun 25, 2013·14 cites·13 claims
- 0786US2025089255A1Integrated assemblies and methods of forming integrated assembliesLODESTAR LICENSING GROUP LLC·Filed 2024·Application pending·0 cites
- 0885US11107830B2Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 31, 2021·3 cites·30 claims
- 0983US12150303B2Integrated assemblies having charge-trapping material arranged in vertically-spaced segments, and methods of forming integrated assembliesLODESTAR LICENSING GROUP LLC·Filed 2023·Granted Nov 19, 2024·0 cites·18 claims
- 1083US11171153B2Integrated assemblies having improved charge migrationMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 9, 2021·2 cites·18 claims
- 1170US2024381646A1Integrated Assemblies and Methods of Forming Integrated AssembliesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1269US12156406B2Methods of forming integrated assemblies with improved charge migration impedanceLODESTAR LICENSING GROUP LLC·Filed 2021·Granted Nov 26, 2024·0 cites·20 claims
- 1368US8811062B2Variable resistance memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 19, 2014·3 cites·7 claims
- 1463US11631697B2Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 18, 2023·0 cites·18 claims
- 1563US11557608B2Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 17, 2023·0 cites·12 claims
- 1662US12477730B2Electronic devices comprising segmented high-k dielectric materials and storage node materials, related systems, and methods of formingMICRON TECHNOLOGY INC·Filed 2022·Granted Nov 18, 2025·0 cites·18 claims
- 1762US11587948B2Integrated assemblies having vertically-spaced channel material segments, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2021·Granted Feb 21, 2023·0 cites·19 claims
- 1861US12052862B2Microelectronic devices including stack structures having air gaps, and related memory devices, electronic systems, and methodsMICRON TECHNOLOGY INC·Filed 2021·Granted Jul 30, 2024·0 cites·24 claims
- 1960US2025212413A1Electronic devices, related systems, and methods of formingMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2059US12082416B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2021·Granted Sep 3, 2024·0 cites·47 claims
- 2159US11289501B2Integrated assemblies having vertically-extending channel material with alternating regions of different dopant distributions, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Mar 29, 2022·0 cites·38 claims
- 2257US2024268116A1Memory Circuitry And Method Used In Forming Memory CircuitryMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2356US5650956ACurrent amplification type mask-ROMSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jul 22, 1997·17 cites·9 claims
- 2455US10943907B2Integrated circuitry comprising an array, method of forming an array, method of forming DRAM circuitry, and method used in the fabrication of integrated circuitryMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 9, 2021·0 cites·15 claims
- 2552US10707211B2Integrated circuitry comprising an array, method of forming an array, method of forming DRAM circuitry, and method used in the fabrication of integrated circuitryMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 7, 2020·0 cites·26 claims
- 2651US10930548B2Methods of forming an apparatus for making semiconductor dievesMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 23, 2021·0 cites·17 claims
- 2747US5716885AMethod for manufacturing NAND type mask-ROM having improved cell currentSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Feb 10, 1998·9 cites·13 claims
- 2845US2015111360A1Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 2944US6404020B1Method of forming contact pads in a semiconductor device and a semiconductor device formed using the methodSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jun 11, 2002·9 cites·13 claims
- 3042US5714038AMethod for forming contact hole of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Feb 3, 1998·11 cites·28 claims
- 3140US6184075B1Method of fabricating interconnect lines and plate electrodes of a storage capacitor in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Feb 6, 2001·8 cites·9 claims
- 3240US2013109148A1Methods of forming a pattern and methods of manufacturing semiconductor devices using the sameOH GYU-HWAN·Filed 2012·Application pending·0 cites
- 3338US5736447AMethod for manufacturing a bipolar junction transistor having a polysilicon emitterSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Apr 7, 1998·8 cites·17 claims
- 3433US8536703B2Semiconductor devices and electronic systemsKIM DEOK-KEE·Filed 2011·Granted Sep 17, 2013·0 cites·20 claims
- 3532US5751045ANand type non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 12, 1998·3 cites·4 claims
- 3628US6090662AMethod of fabricating interconnect lines and plate electrodes of a storage capacitor in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jul 18, 2000·0 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →