Inventor · disambiguated record
Byung Yoon Kim
Also filed as: KIM BYUNG YOON
22 granted patents·10 pending applications·120 citations·filing 1989–2025
94Inventor score
Top patents by PatentIndex Score
32 records- 0197US11342218B1Single crystalline silicon stack formation and bonding to a CMOS waferMICRON TECHNOLOGY INC·Filed 2020·Granted May 24, 2022·4 cites·23 claims
- 0293US11631681B2Vertical contacts for semiconductor devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Apr 18, 2023·2 cites·20 claims
- 0391US9871093B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 16, 2018·8 cites·20 claims
- 0488US6525398B1Semiconductor device capable of preventing moisture-absorption of fuse area thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Feb 25, 2003·44 cites·5 claims
- 0586US12224201B2Single crystalline silicon stack formation and bonding to a cmos waferMICRON TECHNOLOGY INC·Filed 2024·Granted Feb 11, 2025·0 cites·20 claims
- 0682US11791260B2Contacts for twisted conductive lines within memory arraysMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 17, 2023·1 cites·20 claims
- 0780US12052858B2Vertical contacts for semiconductor devicesMICRON TECHNOLOGY INC·Filed 2023·Granted Jul 30, 2024·0 cites·20 claims
- 0879US11869803B2Single crystalline silicon stack formation and bonding to a CMOS waferMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 9, 2024·0 cites·8 claims
- 0979US2024373624A1Vertical contacts for semiconductor devicesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1078US7446043B2Contact structure having silicide layers, semiconductor device employing the same, and methods of fabricating the contact structure and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 4, 2008·8 cites·24 claims
- 1177US2025157853A1Single crystalline silicon stack formation and bonding to a cmos waferMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1271US7517762B2Semiconductor device capable of preventing moisture-absorption of fuse area thereof and method for manufacturing the fuse areaSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 14, 2009·4 cites·24 claims
- 1371US2024147693A1Conductive line contact regions having multiple multi-direction conductive lines and staircase conductive line contact structures for semiconductor devicesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1469US6984895B2Bonding pad structure of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 10, 2006·15 cites·7 claims
- 1568US8026604B2Semiconductor devices having contact holes including protrusions exposing contact padsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 27, 2011·4 cites·7 claims
- 1666US2025240942A1Metal gate memory device and methodMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1765US11903183B2Conductive line contact regions having multiple multi-direction conductive lines and staircase conductive line contact structures for semiconductor devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 13, 2024·0 cites·22 claims
- 1864US6254175B1Air vent system for door of automobileHYUNDAI MOTOR CO LTD·Filed 2000·Granted Jul 3, 2001·12 cites·4 claims
- 1963US2024292607A1Self-aligned line contactsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2063US2024260251A1Memory Circuitry And Methods Used In Forming Memory CircuitryMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2162US12274051B2Metal gate memory device and methodMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 8, 2025·0 cites·21 claims
- 2260US12063797B2Buried connection line for peripheral area of a memory deviceMICRON TECHNOLOGY INC·Filed 2021·Granted Aug 13, 2024·0 cites·20 claims
- 2356US12199094B2Apparatuses including Finfets having different gate oxide configurations, and related computing systemsMICRON TECHNOLOGY INC·Filed 2021·Granted Jan 14, 2025·0 cites·13 claims
- 2456US2025187684A1Apparatus for combining vehicle componentsHYUNDAI MOTOR CO LTD·Filed 2024·Application pending·0 cites
- 2554US2025210091A1Apparatus Including Memory Word Line StructureMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2653US5305259APower source voltage tracking circuit for stabilization of bit linesSAMSUNG ELECTRONICS CO LTD·Filed 1989·Granted Apr 19, 1994·13 cites·23 claims
- 2752US11696432B2Multi-direction conductive line and staircase contact for semiconductor devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 4, 2023·0 cites·7 claims
- 2852US6867070B2Bonding pad structure of a semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 15, 2005·5 cites·8 claims
- 2952US2024079474A1Recess gate transistor and methodMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 3049US11152375B2Contact patterningMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 19, 2021·0 cites·13 claims
- 3144US2008067692A1Semiconductor devices having contact pad protection for reduced electrical failures and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3240US6913953B2Semiconductor device capable of preventing moisture absorption of fuse area thereof and method for manufacturing the fuse areaSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 5, 2005·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →