Inventor · disambiguated record
Byong-Man Kim
Also filed as: KIM BYONG M · KIM BYONG MAN
20 granted patents·6 pending applications·302 citations·filing 2000–2012
95Inventor score
Top patents by PatentIndex Score
26 records- 0189US6597036B1Multi-value single electron memory using double-quantum dot and driving method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 22, 2003·57 cites·20 claims
- 0285US6867999B2Memory device including a transistor having functions of RAM and ROMSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 15, 2005·26 cites·10 claims
- 0384US7824620B2Nano- and micro-scale structures: methods, devices and applications thereofUNIV PENNSYLVANIA·Filed 2005·Granted Nov 2, 2010·14 cites·17 claims
- 0482US6670670B2Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 30, 2003·28 cites·18 claims
- 0580US7626846B2Method and media for improving ferroelectric domain stability in an information storage deviceNANOCHIP INC·Filed 2007·Granted Dec 1, 2009·18 cites·16 claims
- 0677US6946346B2Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage elementSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 20, 2005·20 cites·30 claims
- 0776US6740925B2Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 25, 2004·15 cites·12 claims
- 0875US7407856B2Method of manufacturing a memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 5, 2008·4 cites·10 claims
- 0975US7020064B2Rewritable data storage using carbonaceous material and writing/reading method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Mar 28, 2006·17 cites·16 claims
- 1075US6313503B1MNOS-type memory using single electron transistor and driving method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 6, 2001·28 cites·30 claims
- 1175US6268273B1Fabrication method of single electron tunneling deviceSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 31, 2001·24 cites·4 claims
- 1271US7738350B2Probe storage with doped diamond-like carbon medium and current limiterINTEL CORP·Filed 2007·Granted Jun 15, 2010·2 cites·25 claims
- 1370US7964159B2Nanotube-based sensors and probesUNIV PENNSYLVANIA·Filed 2005·Granted Jun 21, 2011·4 cites·67 claims
- 1470US6479365B2Single electron transistor using porous silicon and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 12, 2002·13 cites·10 claims
- 1569US8264941B2Arrangement and method to perform scanning readout of ferroelectric bit chargesTRAN QUAN ANH·Filed 2007·Granted Sep 11, 2012·4 cites·31 claims
- 1665US6414333B1Single electron transistor using porous siliconSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 2, 2002·9 cites·7 claims
- 1762US6687210B2High-density information storage apparatus using electron emission and methods of writing, reading and erasing information using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 3, 2004·4 cites·60 claims
- 1861US6388268B1Semiconducting YBCO device and superconducting YBCO device locally converted by AFM tip and manufacturing methods thereforSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 14, 2002·11 cites·4 claims
- 1952US2013003521A1Arrangement and method to perform scanning readout of ferroelectric bit chargesINTEL CORP·Filed 2012·Application pending·0 cites
- 2051US6664123B2Method for etching metal layer on a scale of nanometersSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 16, 2003·3 cites·9 claims
- 2149US2010002563A1Media with tetragonally-strained recording layer having improved surface roughnessNANOCHIP INC·Filed 2008·Application pending·0 cites
- 2249US2008174918A1Method and system for writing and reading a charge-trap media with a probe tipNANOCHIP INC·Filed 2007·Application pending·0 cites
- 2347US2008318086A1Surface-treated ferroelectric media for use in systems for storing informationNANOCHIP INC·Filed 2007·Application pending·0 cites
- 2447US2008316897A1Methods of treating a surface of a ferroelectric mediaNANOCHIP INC·Filed 2007·Application pending·0 cites
- 2546US2010100991A1Charge-Amp Based Piezoelectric Charge Microscopy (CPCM) Reading of Ferroelectric Bit Charge SignalNANOCHIP INC·Filed 2008·Application pending·0 cites
- 2645US6999346B2Memory device comprising single transistor having functions of RAM and ROM and methods for operating and manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 14, 2006·1 cites·18 claims
Join the waitlist — get patent alerts
Get an alert when Byong-Man Kim files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →