Inventor · disambiguated record
Byung-Hak Lee
Also filed as: LEE BYUNG H · LEE BYUNG-HAK
33 granted patents·13 pending applications·419 citations·filing 1997–2021
97Inventor score
Files withSAMSUNG ELECTRONICS CO LTD21HYUNDAI ELECTRONICS IND6LG SEMICON CO LTD3SAMSUNG SDI CO LTD3SAMSUNG DISPLAY DEVICES CO LTD2
Top patents by PatentIndex Score
46 records- 0195US8466052B2Method of fabricating semiconductor device having buried wiringBAEK JONG-MIN·Filed 2010·Granted Jun 18, 2013·44 cites·18 claims
- 0293US6306743B1Method for forming a gate electrode on a semiconductor substrateHYUNDAI ELECTRONICS IND·Filed 2001·Granted Oct 23, 2001·78 cites·41 claims
- 0392US6531820B1Plasma display device including grooves concentrating an electric fieldSAMSUNG SDI CO LTD·Filed 2000·Granted Mar 11, 2003·42 cites·11 claims
- 0485US7696552B2Semiconductor devices including high-k dielectric materialsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 13, 2010·12 cites·7 claims
- 0584US7534709B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 19, 2009·12 cites·10 claims
- 0682US7521316B2Methods of forming gate structures for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 21, 2009·8 cites·46 claims
- 0781US7544597B2Method of forming a semiconductor device including an ohmic layerSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 9, 2009·3 cites·20 claims
- 0880US6039619AMethod and apparatus for manufacturing partition wall of plasma display deviceSAMSUNG DISPLAY DEVICES CO LTD·Filed 1998·Granted Mar 21, 2000·40 cites·22 claims
- 0978US7875939B2Semiconductor device including an ohmic layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 25, 2011·2 cites·6 claims
- 1078US7371669B2Method of forming a gate of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 13, 2008·7 cites·22 claims
- 1177US7244511B2Color steel sheet with embossed patterns on one side thereofUNION STEEL MFG CO LTD·Filed 2006·Granted Jul 17, 2007·3 cites·5 claims
- 1276US7759263B2Methods for fabricating improved gate dielectricsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 20, 2010·5 cites·16 claims
- 1376US7582924B2Semiconductor devices having polymetal gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 1, 2009·6 cites·7 claims
- 1476US7550353B2Method of forming semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 23, 2009·6 cites·22 claims
- 1575US6103609AMethod for fabricating semiconductor deviceLG SEMICON CO LTD·Filed 1998·Granted Aug 15, 2000·45 cites·19 claims
- 1675US6096630AMethod for fabricating semiconductor deviceLG SEMICON CO LTD·Filed 1997·Granted Aug 1, 2000·36 cites·13 claims
- 1769US8034701B2Methods of forming recessed gate electrodes having covered layer interfacesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 11, 2011·3 cites·13 claims
- 1869US7772637B2Semiconductor devices including gate structures and leakage barrier oxidesSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 10, 2010·3 cites·15 claims
- 1968US7582931B2Recessed gate electrodes having covered layer interfaces and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·3 cites·5 claims
- 2061US7416968B2Methods of forming field effect transistors having metal silicide gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 26, 2008·2 cites·31 claims
- 2159US8470703B2Semiconductor device and method of fabricating the sameLEE BYUNG-HAK·Filed 2011·Granted Jun 25, 2013·2 cites·16 claims
- 2259US6599821B2Method for fabricating conductive line pattern for semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Jul 29, 2003·8 cites·19 claims
- 2359US6432801B1Gate electrode in a semiconductor device and method for forming thereofHYUNDAI ELECTRONICS IND·Filed 2000·Granted Aug 13, 2002·8 cites·15 claims
- 2459US6221762B1Method for fabricating semiconductor device having improved step coverage and low resistivity contactsHYUNDAI ELECTRONICS IND·Filed 1997·Granted Apr 24, 2001·18 cites·40 claims
- 2552US6531394B1Method for forming gate electrode of semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Mar 11, 2003·3 cites·14 claims
- 2651US7989892B2Gate structure, and semiconductor device having a gate structureSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 2, 2011·0 cites·9 claims
- 2751US5744398AMethod of forming electrode of semiconductor deviceLG SEMICON CO LTD·Filed 1997·Granted Apr 28, 1998·12 cites·27 claims
- 2850US7781849B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 24, 2010·0 cites·16 claims
- 2948US6335297B1Method for forming conductive line of semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jan 1, 2002·4 cites·22 claims
- 3047US7879737B2Methods for fabricating improved gate dielectricsSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Feb 1, 2011·0 cites·12 claims
- 3143US7211953B2Plasma display device having portion where electrical field is concentratedSAMSUNG SDI CO LTD·Filed 2003·Granted May 1, 2007·0 cites·13 claims
- 3243US2009101984A1Semiconductor device having gate electrode including metal layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3343US2005142555A1Novel dendritic cell-specific polynucleotides and microarray comprising the sameFiled 2003·Application pending·0 cites
- 3442US7499005B2Plasma display panel and driving method thereofSAMSUNG SDI CO LTD·Filed 2004·Granted Mar 3, 2009·0 cites·13 claims
- 3542US2005083259A1Driving device and method of plasma display panelFiled 2004·Application pending·0 cites
- 3642US2006115967A1Methods of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 3741US6270388B1Method for fabricating partition of plasma display panelSAMSUNG DISPLAY DEVICES CO LTD·Filed 1999·Granted Aug 7, 2001·4 cites·2 claims
- 3841US2008093660A1Flash memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 3940US2007105397A1Method for removing hydrogen gas from a chamberPARK JAE-HWA·Filed 2006·Application pending·0 cites
- 4039US2006068535A1Methods of fabricating semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4139US2023181292A1Surface-treated implant structureB2LAB CO LTD·Filed 2021·Application pending·0 cites
- 4239US2006051921A1Methods of manufacturing semiconductor device gate structures by performing a surface treatment on a gate oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Application pending·0 cites
- 4338US2005282338A1Methods of forming gate patterns using isotropic etching of gate insulating layersYOO JONG-RYEOL·Filed 2005·Application pending·0 cites
- 4437US2005266665A1Methods of manufacturing semiconductor devices with gate structures having an oxide layer on the sidewalls thereof and related processing apparatusYOUN SUN-PIL·Filed 2005·Application pending·0 cites
- 4536US2005218448A1Transistor structure having an oxidation inhibition layer and method of forming the sameKIM DAE-IK·Filed 2005·Application pending·0 cites
- 4635US2006079075A1Gate structures with silicide sidewall barriers and methods of manufacturing the sameLEE CHANG-WON·Filed 2005·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Byung-Hak Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →