Inventor · disambiguated record
Byeong Ryeol Lee
Also filed as: LEE BYEONG R · LEE BYEONG-RYEOL
8 granted patents·2 pending applications·33 citations·filing 1998–2016
83Inventor score
Files withDONGBU ELECTRONICS CO LTD3SAMSUNG ELECTRONICS CO LTD3DONGBUANAM SEMICONDUCTOR INC2HYUNDAI ELECTRONICS IND1NOH JIN-HYUN1
Top patents by PatentIndex Score
10 records- 0177US9472659B2Semiconductor devicesNOH JIN-HYUN·Filed 2015·Granted Oct 18, 2016·4 cites·20 claims
- 0267US7179713B2Method of fabricating a fin transistorDONGBU ELECTRONICS CO LTD·Filed 2004·Granted Feb 20, 2007·12 cites·9 claims
- 0360US9548401B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 17, 2017·1 cites·15 claims
- 0448US9935167B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 3, 2018·0 cites·17 claims
- 0548US7067360B2Method of fabricating a fin field effect transistorDONGBUANAM SEMICONDUCTOR INC·Filed 2004·Granted Jun 27, 2006·4 cites·3 claims
- 0646US7074711B2Method of fabricating a test pattern for junction leakage currentDONGBU ELECTRONICS CO LTD·Filed 2004·Granted Jul 11, 2006·3 cites·2 claims
- 0742US7229870B2Methods of fabricating semiconductor devicesDONGBU ELECTRONICS CO LTD·Filed 2004·Granted Jun 12, 2007·2 cites·20 claims
- 0841US2007077715A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 0937US2005142719A1Method of fabricating MOS transistorDONGBUANAM SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 1035US6066523AMethod for fabricating a semiconductor device having triple wellsHYUNDAI ELECTRONICS IND·Filed 1998·Granted May 23, 2000·7 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →