Inventor · disambiguated record
Byeongchan Lee
Also filed as: LEE BYEONGCHAN
18 granted patents·3 pending applications·105 citations·filing 2010–2024
93Inventor score
Top patents by PatentIndex Score
21 records- 0196US10079305B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 18, 2018·25 cites·16 claims
- 0288US11004976B2Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 11, 2021·3 cites·19 claims
- 0388US8835995B2Semiconductor devices including silicide regions and methods of fabricating the sameKANG SUNGKWAN·Filed 2011·Granted Sep 16, 2014·12 cites·17 claims
- 0487US9691902B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 27, 2017·6 cites·20 claims
- 0587US9466721B1Semiconductor device having stressor and method of fabricating the sameKIM JINBUM·Filed 2015·Granted Oct 11, 2016·9 cites·20 claims
- 0686US8497533B2Three-dimensional semiconductor memory deviceHYUN SUNGWOO·Filed 2012·Granted Jul 30, 2013·13 cites·8 claims
- 0785US8268687B2Three-dimensional semiconductor memory device and method of fabricating the sameHYUN SUNGWOO·Filed 2010·Granted Sep 18, 2012·13 cites·15 claims
- 0884US8883651B2Semiconductor devices and methods of manufacturing the sameKIM SEOKHOON·Filed 2012·Granted Nov 11, 2014·12 cites·20 claims
- 0979US9412731B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 9, 2016·5 cites·20 claims
- 1075US10170622B2Semiconductor device including MOS transistor having silicided source/drain region and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 1, 2019·1 cites·15 claims
- 1174US9530870B2Methods of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 27, 2016·2 cites·16 claims
- 1270US10062754B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 28, 2018·2 cites·17 claims
- 1366US9373703B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jun 21, 2016·2 cites·20 claims
- 1458US2015031183A1Semiconductor devices including silicide regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 1557US2024361759A1Methods and systems for determining sources of anomalies in manufacturing processesGAUSS LABS INC·Filed 2024·Application pending·0 cites
- 1656US10319859B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 11, 2019·0 cites·20 claims
- 1756US10263109B2Semiconductor devices including silicide regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 16, 2019·0 cites·19 claims
- 1855US2022319666A1Electronic device for providing plan, and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 1953US9853160B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 26, 2017·0 cites·20 claims
- 2050US10756211B2Semiconductor devices including source/drain regions having multiple epitaxial patternsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 25, 2020·0 cites·20 claims
- 2146US9553190B2Semiconductor devices including source/drain regions having multiple epitaxial patternsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jan 24, 2017·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →