Inventor · disambiguated record
Byung-Jun Min
Also filed as: MIN BYUNG-JUN
21 granted patents·1 pending application·557 citations·filing 1998–2011
95Inventor score
Top patents by PatentIndex Score
22 records- 0198US7916538B2Memory device employing NVRAM and flash memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 29, 2011·334 cites·15 claims
- 0296US7173844B2Device and method for generating reference voltage in Ferroelectric Random Access Memory (FRAM)SAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 6, 2007·65 cites·16 claims
- 0393US8300465B2Semiconductor and flash memory systemsJEON BYUNG-GIL·Filed 2010·Granted Oct 30, 2012·18 cites·14 claims
- 0491US7787297B2Flash memory device and flash memory systemSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 31, 2010·20 cites·9 claims
- 0586US7336549B2Redundancy circuit and repair method for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 26, 2008·18 cites·5 claims
- 0682US7616514B2Apparatus and method for generating an imprint-stabilized reference voltage for use in a ferroelectric memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 10, 2009·15 cites·14 claims
- 0775US7221578B2Ferroelectric random access memory device and method for driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 22, 2007·9 cites·16 claims
- 0871US8531884B2Memory device, systems and devices including a memory device, methods of operating a memory device, and/or methods of operating systems and devices including a memory deviceMIN BYUNG JUN·Filed 2011·Granted Sep 10, 2013·5 cites·12 claims
- 0971US7085158B2Nonvolatile semiconductor memory device and one-time programming control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·18 cites·23 claims
- 1070US7120045B2Reference voltage generating apparatus for use in a ferroelectric random access memory (FRAM) and a driving method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 10, 2006·4 cites·20 claims
- 1170US7084655B2Burn-in test apparatus for BGA packages using forced heat exhaustSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 1, 2006·15 cites·16 claims
- 1269US8467244B2Multi-chip semiconductor devices having non-volatile memory devices thereinJEON BYUNG-GIL·Filed 2010·Granted Jun 18, 2013·3 cites·15 claims
- 1366US7617351B2Semiconductor memory device having RAM and ROM areasSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 10, 2009·3 cites·18 claims
- 1462US7345945B2Line driver circuit for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 18, 2008·5 cites·20 claims
- 1560US7477536B2Ferroelectric random access memory device and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 13, 2009·4 cites·14 claims
- 1659US7304882B2Circuits for driving FRAMSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 4, 2007·4 cites·16 claims
- 1757US7800931B2Ferroelectric random access memory apparatus and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 21, 2010·3 cites·19 claims
- 1854USD411828SSocketSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 6, 1999·8 cites·1 claims
- 1950US6967860B2Ferroelectric memory device and control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 22, 2005·6 cites·21 claims
- 2047US7075812B2Ferroelectric random access memory device and control method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 11, 2006·0 cites·21 claims
- 2135US2007035983A1Ferroelectric random access memory device and method for controlling writing sections thereforSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2232US8526232B2Nonvolatile memory device using variable resistive elementMIN BYUNG-JUN·Filed 2011·Granted Sep 3, 2013·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →