Inventor · disambiguated record
Byung-Jun Park
Also filed as: PARK BYUNG JUN
90 granted patents·31 pending applications·789 citations·filing 1999–2025
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD63PARK BYUNG JUN17SK ON CO LTD15KOREA ELECTRIC POWER CORP5HYNIX SEMICONDUCTOR INC3
Top patents by PatentIndex Score
121 records- 0197US7518172B2Image sensor having improved sensitivity and decreased crosstalk and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 14, 2009·52 cites·23 claims
- 0296US9048354B2Methods of forming a through via structurePARK BYUNG-JUN·Filed 2013·Granted Jun 2, 2015·30 cites·30 claims
- 0395US8426938B2Image sensor and method of fabricating the samePARK BYUNG JUN·Filed 2010·Granted Apr 23, 2013·12 cites·8 claims
- 0495US8119439B2Methods of manufacturing an image sensor having an air gapPARK BYUNG-JUN·Filed 2010·Granted Feb 21, 2012·20 cites·20 claims
- 0594US10304887B2Image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 28, 2019·10 cites·20 claims
- 0694US9608026B2Through via structure, methods of forming the samePARK BYUNG-JUN·Filed 2015·Granted Mar 28, 2017·12 cites·18 claims
- 0793US11929381B2Image sensor and a method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 12, 2024·2 cites·14 claims
- 0892US8154062B2CMOS image sensors and related devices and fabrication methodsPARK BYUNG-JUN·Filed 2009·Granted Apr 10, 2012·13 cites·11 claims
- 0991US8207590B2Image sensor, substrate for the same, image sensing device including the image sensor, and associated methodsPARK BYUNG-JUN·Filed 2009·Granted Jun 26, 2012·16 cites·27 claims
- 1091US6528368B1Method for fabricating semiconductor device, and semiconductor device, having storage node contact flugsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 4, 2003·59 cites·16 claims
- 1189US11045516B2Compositions for preventing or treating diseases or disorders associated with neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage and uses thereofPARK BYUNG JUN·Filed 2019·Granted Jun 29, 2021·2 cites·7 claims
- 1289US9165974B2Electronic devices including multiple semiconductor layersSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 20, 2015·12 cites·20 claims
- 1389US8217484B2Image sensor and method of fabricating the samePARK BYUNG JUN·Filed 2010·Granted Jul 10, 2012·9 cites·17 claims
- 1489US6489195B1Method for fabricating DRAM cell using a protection layerSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 3, 2002·48 cites·9 claims
- 1588US8736009B2Image sensor and method of fabricating the samePARK BYUNG JUN·Filed 2013·Granted May 27, 2014·4 cites·10 claims
- 1687US7756211B2Channel estimation method in a MIMO wireless communication systemSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 13, 2010·13 cites·11 claims
- 1787US7283815B2Method for maximizing gain of received signal in a multimedia broadcast/multicast service systemSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 16, 2007·32 cites·6 claims
- 1887US6451651B1Method of manufacturing DRAM device inventionSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Sep 17, 2002·44 cites·8 claims
- 1986US7928488B2Unit pixels, image sensor containing unit pixels, and method of fabricating unit pixelsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 19, 2011·8 cites·24 claims
- 2086US7342211B2Image sensor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 11, 2008·9 cites·13 claims
- 2185US7598552B2Image sensor having improved sensitivity and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 6, 2009·8 cites·12 claims
- 2285US2025364694A1Battery moduleSK ON CO LTD·Filed 2025·Application pending·0 cites
- 2384US6914286B2Semiconductor memory devices using sidewall spacersSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 5, 2005·33 cites·20 claims
- 2483US9728572B2Via structures including etch-delay structures and semiconductor devices having via plugsSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 8, 2017·5 cites·15 claims
- 2583US8471300B2Image sensor devices including electrically conductive reflectorsPARK BYUNG-JUN·Filed 2012·Granted Jun 25, 2013·2 cites·23 claims
- 2681US11430824B2Integrated circuit devices having through-silicon via structuresSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 30, 2022·1 cites·20 claims
- 2781US10629643B2Integrated circuit devices having through-silicon via structuresSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 21, 2020·3 cites·20 claims
- 2881US7411173B2Image sensor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 12, 2008·6 cites·22 claims
- 2980US7026208B2Methods of forming integrated circuit devices including cylindrical capacitors having supporters between lower electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 11, 2006·28 cites·17 claims
- 3079US10229949B2Via structures including etch-delay structures and semiconductor devices having via plugsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 12, 2019·2 cites·20 claims
- 3179US9455284B2Stack type image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 27, 2016·3 cites·20 claims
- 3279US6479343B1DRAM cell capacitor and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 12, 2002·26 cites·14 claims
- 3378US8759137B2Methods of fabricating CMOS image sensorsPARK BYUNG-JUN·Filed 2013·Granted Jun 24, 2014·1 cites·9 claims
- 3477US7491990B2CMOS image sensors for preventing optical crosstalkSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 17, 2009·4 cites·21 claims
- 3577US7413921B2Method of manufacturing image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 19, 2008·4 cites·20 claims
- 3677US2024234472A1Image sensor and a method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 3776US7622319B2CMOS image sensor and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 24, 2009·3 cites·12 claims
- 3875US7052983B2Method of manufacturing a semiconductor device having selective epitaxial silicon layer on contact padsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 30, 2006·18 cites·24 claims
- 3975US6534813B1Semiconductor device having a self-aligned contact structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Mar 18, 2003·19 cites·9 claims
- 4074US12444787B2Battery rackSK ON CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·14 claims
- 4174US8691617B2Method of manufacturing image sensor having backside illumination structureKIM SANG-HOON·Filed 2012·Granted Apr 8, 2014·3 cites·20 claims
- 4274US7803653B2Method of manufacturing image sensorSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 28, 2010·3 cites·18 claims
- 4374US6759704B2Method for fabricating semiconductor device, and semiconductor device, having storage node contact plugsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 6, 2004·18 cites·20 claims
- 4474US2024387925A1Energy storage device and energy storage system including the sameSK ON CO LTD·Filed 2024·Application pending·0 cites
- 4574US2024387924A1Energy storage systemSK ON CO LTD·Filed 2024·Application pending·0 cites
- 4674US2024429489A1Energy storage apparatusSK ON CO LTD·Filed 2024·Application pending·0 cites
- 4773US11723940B2Compositions for preventing or treating diseases or disorders associated with neuro-inflammation, neuro-apoptosis, or neuro-oxidative damage and uses thereofPARK BYUNG JUN·Filed 2021·Granted Aug 15, 2023·0 cites·15 claims
- 4873US11638736B2Compositions for preventing or treating diseases or disorders associated with neuro-inflammation, neuro-apoptosis, or neuro- oxidative damage and uses thereofPARK BYUNG JUN·Filed 2021·Granted May 2, 2023·0 cites·10 claims
- 4973US8794894B2Self-piercing rivetLEE MUN-YONG·Filed 2011·Granted Aug 5, 2014·3 cites·12 claims
- 5073US6720269B2Semiconductor device having a self-aligned contact structure and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 13, 2004·17 cites·24 claims
Showing the top 50 of 121 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Byung-Jun Park files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →