Inventor · disambiguated record
Byoung-Moon Yoon
Also filed as: YOON BYOUNG-MOON
23 granted patents·19 pending applications·141 citations·filing 1996–2015
95Inventor score
Top patents by PatentIndex Score
42 records- 0191US7445997B2Methods of forming non-volatile memory devices having floating gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 4, 2008·10 cites·34 claims
- 0290US8664101B2Multiple mold structure methods of manufacturing vertical memory devicesKIM HYO-JUNG·Filed 2012·Granted Mar 4, 2014·17 cites·20 claims
- 0385US9530670B2Methods of forming conductive patterns and methods of manufacturing semiconductor devices using the same using an etchant composition that includes phosphoric acid, nitric acid, and an assistant oxidantSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 27, 2016·8 cites·14 claims
- 0485US7151043B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Dec 19, 2006·14 cites·20 claims
- 0583US8822287B2Methods of manufacturing semiconductor devicesKIM HYO-JUNG·Filed 2011·Granted Sep 2, 2014·7 cites·10 claims
- 0679US8168509B2Etching methods and methods of manufacturing a CMOS image sensor using the sameKO KI-HYUNG·Filed 2010·Granted May 1, 2012·4 cites·16 claims
- 0776US8039372B2Methods of manufacturing variable resistance non-volatile memory devices including a uniformly narrow contact layerSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 18, 2011·10 cites·9 claims
- 0873US6843257B2Wafer cleaning systemSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 18, 2005·16 cites·38 claims
- 0973US6489201B2Method for manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 3, 2002·17 cites·11 claims
- 1068US8765551B2Non-volatile memory device having vertical structure and method of manufacturing the sameYANG JUN-YOUL·Filed 2012·Granted Jul 1, 2014·4 cites·21 claims
- 1168US8033401B2Wafer guide for preventing wafer breakage in semiconductor cleaning apparatusSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 11, 2011·5 cites·13 claims
- 1265US7781346B2Methods of forming patterns and capacitors for semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 24, 2010·2 cites·10 claims
- 1360US6740587B2Semiconductor device having a metal silicide layer and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 25, 2004·6 cites·24 claims
- 1456US7582559B2Method of manufacturing a semiconductor device having voids in a polysilicon layerSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·1 cites·22 claims
- 1556US6831012B2Method for forming a silicide film of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 14, 2004·5 cites·20 claims
- 1650US2010210068A1Method of forming phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 1749US7338610B2Etching method for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 4, 2008·2 cites·22 claims
- 1848US7089947B2Apparatus and method for cleaning a semiconductor waferSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 15, 2006·2 cites·20 claims
- 1948US7017597B2Megasonic cleaning apparatus for fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 28, 2006·2 cites·14 claims
- 2048US2008214006A1Methods of using corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substratesLEE KWANG-WOOK·Filed 2008·Application pending·0 cites
- 2148US2010178754A1Method of manufacturing cmos transistorSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 2247US7579284B2Etching solution, method of forming a pattern using the same, method of manufacturing a multiple gate oxide layer using the same and method of manufacturing a flash memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 25, 2009·0 cites·14 claims
- 2346US2008102595A1Etching method for manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2443US2004198007A1Semiconductor device having a metal silicide layer and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 2541US6117350AAdjustable selectivity etching solutions and methods of etching semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Sep 12, 2000·9 cites·5 claims
- 2641US2006292817A1Methods of processing semiconductor structures and methods of forming capacitors for semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2740US2006263971A1Semiconductor device and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2840US2005026452A1Etching method for manufacturing semiconductor deviceFiled 2004·Application pending·0 cites
- 2940US2005028842A1Method of cleaning a substrate and an apparatus thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Application pending·0 cites
- 3039US7105474B2Organic stripping composition and method of etching oxide using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 12, 2006·0 cites·9 claims
- 3139US6946431B2Cleaning solution including aqueous ammonia solution, acetic acid and deionized water for integrated circuit devices and methods of cleaning integrated circuit devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 20, 2005·0 cites·36 claims
- 3239US6562727B2Methods and compositions for removal of anti-reflective layers using fluorine containing compounds, oxidants, and waterSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted May 13, 2003·0 cites·26 claims
- 3339US2003160208A1Methods and compositions for removal of anti-reflective layers using fluorine containing compounds, oxidants, and waterFiled 2003·Application pending·0 cites
- 3439US2005176604A1Corrosion-inhibiting cleaning compositions for metal layers and patterns on semiconductor substratesFiled 2004·Application pending·0 cites
- 3539US2004231711A1Spin chuck for wafer or LCD processingFiled 2004·Application pending·0 cites
- 3638US2005079682A1Method of manufacturing void-free shallow trench isolation layerFiled 2004·Application pending·0 cites
- 3738US2004242015A1Etching compositions for silicon germanium and etching methods using the sameFiled 2004·Application pending·0 cites
- 3837US2004025911A1Apparatus for cleaning a semiconductor substrate by vibrating cleaning solution supplied onto the substrateFiled 2003·Application pending·0 cites
- 3937US2005023634A1Method of fabricating shallow trench isolation structure and microelectronic device having the structureFiled 2004·Application pending·0 cites
- 4035US2015355551A1Systems for removing photoresists and methods of removing photoresists using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 4134US2015255302A1Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Application pending·0 cites
- 4233US2002072197A1Method for self-aligned shallow trench isolation and method of manufacturing non-volatile memory device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Byoung-Moon Yoon files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →