Inventor · disambiguated record
C. Andre T. Salama
Also filed as: SALAMA C A T · SALAMA C ANDRE T
12 granted patents·2 pending applications·656 citations·filing 1987–2007
93Inventor score
Files withFUJI ELECTRIC CO LTD5FUJI ELECTRIC CO INC1HAGH SOTOUDEH HAMEDI1SALAMA C ANDRE T1UNIV TORONTO1
Top patents by PatentIndex Score
14 records- 0194US6316807B1Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing sameFiled 1998·Granted Nov 13, 2001·123 cites·2 claims
- 0293US6768180B2Superjunction LDMOST using an insulator substrate for power integrated circuitsFiled 2002·Granted Jul 27, 2004·177 cites·7 claims
- 0391US4922327ASemiconductor LDMOS device with upper and lower passagesUNIV TORONTO·Filed 1987·Granted May 1, 1990·138 cites·11 claims
- 0490US6781197B2Trench-type MOSFET having a reduced device pitch and on-resistanceFUJI ELECTRIC CO LTD·Filed 2002·Granted Aug 24, 2004·50 cites·6 claims
- 0589US6800904B2Semiconductor integrated circuit device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2002·Granted Oct 5, 2004·40 cites·4 claims
- 0686US7023050B2Super junction / resurf LDMOST (SJR-LDMOST)SALAMA C ANDRE T·Filed 2003·Granted Apr 4, 2006·68 cites·11 claims
- 0785US6664163B2Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing sameFiled 2001·Granted Dec 16, 2003·30 cites·2 claims
- 0874US7445983B2Method of manufacturing a semiconductor integrated circuit deviceFUJI ELECTRIC CO LTD·Filed 2007·Granted Nov 4, 2008·4 cites·7 claims
- 0962US7260157B2Phase shifted transmitter architecture for communication systemsHAGH SOTOUDEH HAMEDI·Filed 2002·Granted Aug 21, 2007·17 cites·2 claims
- 1056US7005352B2Trench-type MOSFET having a reduced device pitch and on-resistanceFUJI ELECTRIC CO INC·Filed 2004·Granted Feb 28, 2006·7 cites·3 claims
- 1152US7445982B2Method of manufacturing a semiconductor integrated circuit deviceFUJI ELECTRIC CO LTD·Filed 2007·Granted Nov 4, 2008·0 cites·7 claims
- 1248US7344935B2Method of manufacturing a semiconductor integrated circuit deviceFUJI ELECTRIC CO LTD·Filed 2004·Granted Mar 18, 2008·2 cites·7 claims
- 1338US2004014263A1Low on-resistance trench lateral MISFET with better switching characteristics and method for manufacturing sameFiled 2003·Application pending·0 cites
- 1438US2005124311A1Low-voltage low-power high-linearity active CMOS mixerFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →