Inventor · disambiguated record
Carissima Marie Hudson
Also filed as: HUDSON CARISSIMA M · HUDSON CARISSIMA MARIE
29 granted patents·19 pending applications·32 citations·filing 2014–2025
94Inventor score
Files withGLOBALWAFERS CO LTD38GLOBAL WAFERS CO LTD4CORNER STAR LTD2SUNEDISON SEMICONDUCTOR LTD UEN201334164H2SUNEDISON INC1
Top patents by PatentIndex Score
48 records- 0194US11111596B2Single crystal silicon ingot having axial uniformityGLOBALWAFERS CO LTD·Filed 2019·Granted Sep 7, 2021·3 cites·20 claims
- 0294US11111597B2Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski methodGLOBALWAFERS CO LTD·Filed 2019·Granted Sep 7, 2021·9 cites·36 claims
- 0393US11408090B2Methods for growing a single crystal silicon ingot using continuous Czochralski methodGLOBALWAFERS CO LTD·Filed 2020·Granted Aug 9, 2022·3 cites·25 claims
- 0491US11739437B2Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growthGLOBALWAFERS CO LTD·Filed 2019·Granted Aug 29, 2023·2 cites·17 claims
- 0589US11142844B2High resistivity single crystal silicon ingot and wafer having improved mechanical strengthGLOBALWAFERS CO LTD·Filed 2017·Granted Oct 12, 2021·5 cites·45 claims
- 0688US9951440B2Methods for producing low oxygen silicon ingotsSUNEDISON SEMICONDUCTOR LTD·Filed 2014·Granted Apr 24, 2018·3 cites·35 claims
- 0787US10793969B2Sample rod growth and resistivity measurement during single crystal silicon ingot productionGLOBAL WAFERS CO LTD·Filed 2018·Granted Oct 6, 2020·2 cites·18 claims
- 0886US10954606B2Methods for modeling the impurity concentration of a single crystal silicon ingotGLOBAL WAFERS CO LTD·Filed 2018·Granted Mar 23, 2021·2 cites·17 claims
- 0985US10513796B2Methods for producing low oxygen silicon ingotsGLOBALWAFERS CO LTD·Filed 2018·Granted Dec 24, 2019·1 cites·31 claims
- 1083US10781532B2Methods for determining the resistivity of a polycrystalline silicon meltGLOBAL WAFERS CO LTD·Filed 2018·Granted Sep 22, 2020·1 cites·19 claims
- 1179US12351938B2Methods for producing a product ingot having low oxygen contentGLOBALWAFERS CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·14 claims
- 1279US2023340690A1Resistivity stabilization measurement of fat neck slabs for high resistivity and ultra-high resistivity single crystal silicon ingot growthGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 1375US11932962B2Systems and methods for production of silicon using a horizontal magnetic fieldGLOBALWAFERS CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·7 claims
- 1474US11680335B2Single crystal silicon ingot having axial uniformityGLOBALWAFERS CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
- 1574US2025270733A1Methods for producing a product ingot having low oxygen contentGLOBALWAFERS CO LTD·Filed 2025·Application pending·0 cites
- 1672US11655560B2High resistivity single crystal silicon ingot and wafer having improved mechanical strengthGLOBALWAFERS CO LTD·Filed 2021·Granted May 23, 2023·0 cites·30 claims
- 1772US11655559B2High resistivity single crystal silicon ingot and wafer having improved mechanical strengthGLOBALWAFERS CO LTD·Filed 2021·Granted May 23, 2023·0 cites·27 claims
- 1871US12410538B2Use of arrays of quartz particles during single crystal silicon ingot productionGLOBALWAFERS CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 1971US10453703B2Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yieldSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Oct 22, 2019·1 cites·15 claims
- 2070US11873574B2Systems and methods for production of silicon using a horizontal magnetic fieldGLOBALWAFERS CO LTD·Filed 2020·Granted Jan 16, 2024·0 cites·10 claims
- 2170US11873575B2Ingot puller apparatus having heat shields with voids thereinGLOBALWAFERS CO LTD·Filed 2021·Granted Jan 16, 2024·0 cites·11 claims
- 2269US2023392281A1Methods for forming single crystal silicon ingots with reduced carbon contamination and susceptors for use in such methodsGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 2368US2019153615A1Crystal pulling method including crucible and conditioning membersCORNER STAR LTD·Filed 2019·Application pending·0 cites
- 2466US10221500B2System for forming an ingot including crucible and conditioning membersSUNEDISON INC·Filed 2017·Granted Mar 5, 2019·0 cites·11 claims
- 2565US2025354290A1Systems and methods for cooling a chunk polycrystalline feederGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 2665US2025092560A1Systems and methods for controlling a gas dopant vaporization rate during a crystal growth processGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 2764US2024247398A1Ingot puller apparatus and methods for growing a single crystal silicon ingot with reduced lower chamber depositsGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 2864US2024368801A1Doped particulate silicon particle size selectionGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 2964US2024167191A1Ingot puller apparatus having a reflector assembly suspended from support shaftsGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 3063US12031229B2Ingot puller apparatus having heat shields with feet having an apexGLOBALWAFERS CO LTD·Filed 2022·Granted Jul 9, 2024·0 cites·5 claims
- 3163US11680336B2Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski methodGLOBALWAFERS CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·47 claims
- 3263US2024167193A1Systems and methods for cooling a chunk polycrystalline feederGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 3361US12221718B2Systems and methods for controlling a gas dopant vaporization rate during a crystal growth processGLOBALWAFERS CO LTD·Filed 2022·Granted Feb 11, 2025·0 cites·20 claims
- 3461US2024279840A1Methods for preparing a single crystal silicon ingot with reduced radial resistivity variationGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 3560US12486593B2Axial positioning of magnetic poles while producing a silicon ingotGLOBALWAFERS CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·17 claims
- 3660US11767611B2Methods for producing a monocrystalline ingot by horizontal magnetic field CzochralskiGLOBALWAFERS CO LTD·Filed 2021·Granted Sep 26, 2023·0 cites·17 claims
- 3760US2025293073A1Reclaimable donor substrates for use in preparing multiple silicon-on-insulator structuresGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 3860US2023112094A1Modeling thermal donor formation and target resistivity for single crystal silicon ingot productionGLOBALWAFERS CO LTD·Filed 2022·Application pending·0 cites
- 3959US12486594B2Ingot puller apparatus that axially position magnetic polesGLOBALWAFERS CO LTD·Filed 2022·Granted Dec 2, 2025·0 cites·17 claims
- 4057US12195871B2Systems and methods for controlling a gas dopant vaporization rate during a crystal growth processGLOBALWAFERS CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·20 claims
- 4156US2024392467A1Methods for adding a plurality of dopant batches to an ingot puller apparatusGLOBALWAFERS CO LTD·Filed 2023·Application pending·0 cites
- 4255US10707093B2Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yieldSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2019·Granted Jul 7, 2020·0 cites·10 claims
- 4353US2024240355A1Methods for producing single crystal silicon wafers for insulated gate bipolar transistorsGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 4451US11047066B2Growth of plural sample rods to determine impurity build-up during production of single crystal silicon ingotsGLOBAL WAFERS CO LTD·Filed 2018·Granted Jun 29, 2021·0 cites·15 claims
- 4549US2020199773A1Center Slab Lapping and Resistivity Measurement During Single Crystal Silicon Ingot ProductionGLOBALWAFERS CO LTD·Filed 2018·Application pending·0 cites
- 4649US2020199775A1Sample Rod Center Slab Resistivity Measurement During Single Crystal Silicon Ingot ProductionGLOBALWAFERS CO LTD·Filed 2018·Application pending·0 cites
- 4749US2020199774A1Sample Rod Center Slab Resistivity Measurement With Four-Point Probe During Single Crystal Silicon Ingot ProductionGLOBALWAFERS CO LTD·Filed 2018·Application pending·0 cites
- 4841US2018291524A1Methods for producing single crystal ingots doped with volatile dopantsCORNER STAR LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →