Inventor · disambiguated record
Caspar Leendertz
Also filed as: LEENDERTZ CASPAR
42 granted patents·14 pending applications·33 citations·filing 2018–2025
96Inventor score
Files withINFINEON TECHNOLOGIES AG50INFINEON TECHNOLOGIES AUSTRIA AG5INFINEON TECH DRESDEN GMBH & CO KG1
Top patents by PatentIndex Score
56 records- 0197US11367775B1Shielding structure for SiC devicesINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jun 21, 2022·6 cites·21 claims
- 0293US10586845B1SiC trench transistor device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 10, 2020·9 cites·25 claims
- 0390US11552173B2Silicon carbide device with trench gateINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·2 cites·26 claims
- 0489US11610976B2Semiconductor device including a transistor with one or more barrier regionsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Mar 21, 2023·2 cites·20 claims
- 0589US11011606B2Semiconductor component having a SiC semiconductor body and method for producing a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 18, 2021·3 cites·13 claims
- 0683US10957768B1Silicon carbide device with an implantation tail compensation regionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Mar 23, 2021·3 cites·20 claims
- 0782US12266694B2Silicon carbide device with a stripe-shaped trench gate structureINFINEON TECHNOLOGIES AG·Filed 2023·Granted Apr 1, 2025·0 cites·27 claims
- 0882US11581428B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 14, 2023·1 cites·19 claims
- 0981US11552170B2Semiconductor device including current spread regionINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·1 cites·20 claims
- 1080US10304952B2Power semiconductor device with dV/dt controllability and cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2018·Granted May 28, 2019·2 cites·31 claims
- 1179US12471336B2Semiconductor component having a SiC semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2023·Granted Nov 11, 2025·0 cites·19 claims
- 1278US2025220937A1Semiconductor device having a transistor with active mesas and dummy mesasINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 1377US2025203986A1Silicon carbide device with a stripe-shaped trench gate structureINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 1476US12283621B2Semiconductor device having a transistor with trenches and mesasINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 1576US11888032B2Method of producing a silicon carbide device with a trench gateINFINEON TECHNOLOGIES AG·Filed 2022·Granted Jan 30, 2024·0 cites·20 claims
- 1676US10586851B2Silicon carbide semiconductor device and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2018·Granted Mar 10, 2020·1 cites·5 claims
- 1774US12300724B2Method of manufacturing silicon carbide semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2021·Granted May 13, 2025·0 cites·13 claims
- 1873US10840362B2IGBT with dV/dt controllabilityINFINEON TECHNOLOGIES AG·Filed 2018·Granted Nov 17, 2020·1 cites·16 claims
- 1972US11600701B2Semiconductor component having a SiC semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2021·Granted Mar 7, 2023·0 cites·12 claims
- 2071US11929397B2Semiconductor device including trench structure and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2022·Granted Mar 12, 2024·0 cites·20 claims
- 2171US10985248B2SiC power semiconductor device with integrated Schottky junctionINFINEON TECHNOLOGIES AG·Filed 2019·Granted Apr 20, 2021·1 cites·20 claims
- 2270US12176396B2Semiconductor device including current spread regionINFINEON TECHNOLOGIES AG·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 2370US2024145247A1Ion beam implantation method and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2469US11462611B2SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Oct 4, 2022·0 cites·15 claims
- 2569US11177354B2Method of manufacturing silicon carbide semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2020·Granted Nov 16, 2021·0 cites·22 claims
- 2668US11626477B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2021·Granted Apr 11, 2023·0 cites·23 claims
- 2768US11610986B2Power semiconductor switch having a cross-trench structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Mar 21, 2023·0 cites·16 claims
- 2868US10644141B2Power semiconductor device with dV/dt controllabilityINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted May 5, 2020·1 cites·23 claims
- 2968US2023049364A1Transistor device and method for producing thereofINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 3066US10896952B2SiC device and methods of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 19, 2021·0 cites·16 claims
- 3162US11908694B2Ion beam implantation method and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Feb 20, 2024·0 cites·20 claims
- 3262US10923578B2Semiconductor device comprising a barrier regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Feb 16, 2021·0 cites·11 claims
- 3362US2025063775A1Semiconductor device having a superjunction-structureINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 3461US11276754B2Semiconductor device including trench structure and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2020·Granted Mar 15, 2022·0 cites·11 claims
- 3561US11075290B2Power semiconductor device having a cross-trench arrangementINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 27, 2021·0 cites·18 claims
- 3660US11101343B2Silicon carbide field-effect transistor including shielding areasINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 3758US2025014902A1Method of manufacturing a semiconductor device including ion implantation processesINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 3857US12119377B2SiC devices with shielding structureINFINEON TECHNOLOGIES AG·Filed 2021·Granted Oct 15, 2024·0 cites·22 claims
- 3956US2024072122A1Semiconductor device and method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 4056US2024194778A1Semiconductor Device Having a Field Termination Structure and a Charge Balance Structure, and Method of Producing the Semiconductor DeviceINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 4155US2023163167A1Semiconductor device including a trench gate structureINFINEON TECHNOLOGIES AG·Filed 2022·Application pending·0 cites
- 4254US2025113592A1Semiconductor device with schottky contactINFINEON TECHNOLOGIES AG·Filed 2023·Application pending·0 cites
- 4354US2025324714A1Silicon carbide device with trench gateINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 4453US11764063B2Silicon carbide device with compensation region and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2020·Granted Sep 19, 2023·0 cites·22 claims
- 4553US11757031B2Power transistor with integrated Schottky diodeINFINEON TECHNOLOGIES AG·Filed 2020·Granted Sep 12, 2023·0 cites·20 claims
- 4653US11404370B2Failure structure in semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Aug 2, 2022·0 cites·17 claims
- 4753US11322596B2Semiconductor device including junction material in a trench and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2019·Granted May 3, 2022·0 cites·21 claims
- 4853US2025359143A1Semiconductor device with current propagation region and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 4953US2025366025A1Superjunction transistor deviceINFINEON TECHNOLOGIES AG·Filed 2025·Application pending·0 cites
- 5052US11552172B2Silicon carbide device with compensation layer and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2020·Granted Jan 10, 2023·0 cites·13 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →