Inventor · disambiguated record
Carl Naylor
Also filed as: NAYLOR CARL · NAYLOR CARL H · NAYLOR CARL HUGO
33 granted patents·41 pending applications·23 citations·filing 2018–2024
94Inventor score
Top patents by PatentIndex Score
74 records- 0198US11444024B2Subtractively patterned interconnect structures for integrated circuitsINTEL CORP·Filed 2020·Granted Sep 13, 2022·10 cites·30 claims
- 0295US12027458B2Subtractively patterned interconnect structures for integrated circuitsINTEL CORP·Filed 2022·Granted Jul 2, 2024·2 cites·20 claims
- 0393US11830788B2Integrated circuits and methods for forming integrated circuitsINTEL CORP·Filed 2021·Granted Nov 28, 2023·2 cites·6 claims
- 0485US12394716B2Integrated circuit interconnect structures with graphene capINTEL CORP·Filed 2021·Granted Aug 19, 2025·1 cites·19 claims
- 0584US12396254B2Stacked 2D CMOS with inter metal layersINTEL CORP·Filed 2021·Granted Aug 19, 2025·1 cites·19 claims
- 0683US12482744B2Subtractively patterned interconnect structures for integrated circuitsINTEL CORP·Filed 2024·Granted Nov 25, 2025·0 cites·19 claims
- 0781US12396217B2Encapsulation for transition metal dichalcogenide nanosheet transistor and methods of fabricationINTEL CORP·Filed 2020·Granted Aug 19, 2025·1 cites·13 claims
- 0881US11171239B2Transistor channel passivation with 2D crystalline materialINTEL CORP·Filed 2019·Granted Nov 9, 2021·2 cites·17 claims
- 0980US12278289B2TMD inverted nanowire integrationINTEL CORP·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 1079US11062995B2Interconnect fabricated with flowable copperINTEL CORP·Filed 2019·Granted Jul 13, 2021·2 cites·20 claims
- 1174US11276644B2Integrated circuits and methods for forming thin film crystal layersINTEL CORP·Filed 2018·Granted Mar 15, 2022·1 cites·9 claims
- 1272US12211794B2Integrated circuits and methods for forming thin film crystal layersINTEL CORP·Filed 2022·Granted Jan 28, 2025·0 cites·9 claims
- 1371US11888034B2Transistors with metal chalcogenide channel materialsINTEL CORP·Filed 2019·Granted Jan 30, 2024·1 cites·19 claims
- 1468US12107170B2Transistor channel passivation with 2D crystalline materialINTEL CORP·Filed 2021·Granted Oct 1, 2024·0 cites·17 claims
- 1566US11935956B2TMD inverted nanowire integrationINTEL CORP·Filed 2020·Granted Mar 19, 2024·0 cites·20 claims
- 1660US12369382B2Integrated circuit structures with graphene contactsINTEL CORP·Filed 2021·Granted Jul 22, 2025·0 cites·25 claims
- 1760US12165917B2Integrated circuit interconnect structures with ultra-thin metal chalcogenide barrier materialsINTEL CORP·Filed 2020·Granted Dec 10, 2024·0 cites·19 claims
- 1859US11164809B2Integrated circuits and methods for forming integrated circuitsINTEL CORP·Filed 2018·Granted Nov 2, 2021·0 cites·14 claims
- 1957US12324204B2Transistors including two-dimensional materialsINTEL CORP·Filed 2020·Granted Jun 3, 2025·0 cites·20 claims
- 2057US11626451B2Magnetic memory device with ruthenium diffusion barrierINTEL CORP·Filed 2019·Granted Apr 11, 2023·0 cites·23 claims
- 2156US12432976B2Thin film transistors having strain-inducing structures integrated with 2D channel materialsINTEL CORP·Filed 2021·Granted Sep 30, 2025·0 cites·10 claims
- 2256US12354957B2Interconnect structures with different metal materialsINTEL CORP·Filed 2021·Granted Jul 8, 2025·0 cites·20 claims
- 2356US12349442B2Thin film transistors having semiconductor structures integrated with 2D channel materialsINTEL CORP·Filed 2021·Granted Jul 1, 2025·0 cites·20 claims
- 2456US12266720B2Transistors with monocrystalline metal chalcogenide channel materialsINTEL CORP·Filed 2020·Granted Apr 1, 2025·0 cites·12 claims
- 2556US2025113573A1Transition metal dichalcogenide monolayer transfer using low strain transfer protective layerINTEL CORP·Filed 2023·Application pending·0 cites
- 2656US2025113520A1Transfer of a 2d material to a target substrateINTEL CORP·Filed 2023·Application pending·0 cites
- 2756US2025112122A1Backside power gatingINTEL CORP·Filed 2023·Application pending·0 cites
- 2856US2025107147A1Architectures and methods to modulate contact resistance in 2d materials for use in field effect transistor devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 2955US12176388B2Transition metal dichalcogenide nanowires and methods of fabricationINTEL CORP·Filed 2020·Granted Dec 24, 2024·0 cites·20 claims
- 3055US2025113540A1Transistor comprising a composite gate dielectric structure and method to provide sameINTEL CORP·Filed 2023·Application pending·0 cites
- 3155US2025113572A1Method of fabricating a 2d channel transistor by employing selective metallization to form a source or drain structureINTEL CORP·Filed 2023·Application pending·0 cites
- 3254US12349438B2Contact gating for 2D field effect transistorsINTEL CORP·Filed 2021·Granted Jul 1, 2025·0 cites·21 claims
- 3354US11908950B2Charge-transfer spacers for stacked nanoribbon 2D transistorsINTEL CORP·Filed 2020·Granted Feb 20, 2024·0 cites·24 claims
- 3454US2024222441A1Selective gate oxide formation on 2d material based transistor devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 3554US2025113599A1Methods for doping 2d transistor devices and resulting architecturesINTEL CORP·Filed 2023·Application pending·0 cites
- 3653US12266712B2Transition metal dichalcogenide nanosheet transistors and methods of fabricationINTEL CORP·Filed 2020·Granted Apr 1, 2025·0 cites·19 claims
- 3753US2023420511A1Stacked single crystal transition-metal dichalcogenide using seeded growthINTEL CORP·Filed 2022·Application pending·0 cites
- 3853US2025113547A1Integrated circuit structures with internal spacers for 2d channel materialsINTEL CORP·Filed 2023·Application pending·0 cites
- 3953US2025113521A1Direct transfer of transition metal dichalcogenide monolayers using diffusion bonding layersINTEL CORP·Filed 2023·Application pending·0 cites
- 4052US12057388B2Integrated circuit structures having linerless self-forming barriersINTEL CORP·Filed 2019·Granted Aug 6, 2024·0 cites·23 claims
- 4152US2023420510A1Self-assembled monolayer on a dielectric for transition metal dichalcogenide growth for stacked 2d channelsINTEL CORP·Filed 2022·Application pending·0 cites
- 4252US2024222461A1Beol contact metals for 2d transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 4352US2024222483A12d nanoribbons utilizing silicon scaffoldingINTEL CORP·Filed 2022·Application pending·0 cites
- 4451US2024222484A1Transistor with channel material in a stack with insulator material supportsINTEL CORP·Filed 2022·Application pending·0 cites
- 4551US2024222482A1Transistor structures having a doping layer on transition metal dichalcogenide layers outside of the channel regionINTEL CORP·Filed 2022·Application pending·0 cites
- 4651US2023197836A1Integrated circuits with max or mx conductive materialsINTEL CORP·Filed 2021·Application pending·0 cites
- 4751US2024006521A1Back-end-of-line 2d transistorINTEL CORP·Filed 2022·Application pending·0 cites
- 4851US2024222113A1Passivation of crystalline substrate for metal chalcogen material synthesisINTEL CORP·Filed 2022·Application pending·0 cites
- 4951US2023197860A1Metal chalcogenide transistors with defected channel transition layerINTEL CORP·Filed 2021·Application pending·0 cites
- 5051US2024006484A1Contact architecture for 2d stacked nanoribbon transistorINTEL CORP·Filed 2022·Application pending·0 cites
Showing the top 50 of 74 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →