Inventor · disambiguated record
Carly Rogan
Also filed as: ROGAN CARLY · ROGAN CARLY LORRAINE
0 granted patents·19 pending applications·0 citations·filing 2021–2024
Files withINTEL CORP19
Top patents by PatentIndex Score
19 records- 0157US2025311376A1Coupled multi-layer magnetoelectric, ferroelectric, and ferromagnetic structuresINTEL CORP·Filed 2024·Application pending·0 cites
- 0256US2025311636A1Magnetoelectric spin–orbit (meso) device with unconventional spin-to-charge conversionINTEL CORP·Filed 2024·Application pending·0 cites
- 0356US2025107147A1Architectures and methods to modulate contact resistance in 2d materials for use in field effect transistor devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 0456US2025008852A1Two-terminal ferroelectric perovskite diode memory elementINTEL CORP·Filed 2023·Application pending·0 cites
- 0556US2025221318A1Magnetoelectric spin–orbit (meso) device with antiferromagnetic spin injection and spin absorption for increased output voltageINTEL CORP·Filed 2023·Application pending·0 cites
- 0656US2025311639A1Spin-to-charge conversion using extrinsic spin hall effect and orbital hall effectINTEL CORP·Filed 2024·Application pending·0 cites
- 0755US2024429301A1Perovskite-based field effect transistor (fet) devices enabled by epitaxial lateral overgrowthINTEL CORP·Filed 2023·Application pending·0 cites
- 0854US2025006791A1Perovskite oxide field effect transistor with highly doped source and drainINTEL CORP·Filed 2023·Application pending·0 cites
- 0953US2023420511A1Stacked single crystal transition-metal dichalcogenide using seeded growthINTEL CORP·Filed 2022·Application pending·0 cites
- 1053US2025006840A1Negative capacitance field effect transistor (ncfet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 1153US2025006839A1P-type perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2023·Application pending·0 cites
- 1252US2023420510A1Self-assembled monolayer on a dielectric for transition metal dichalcogenide growth for stacked 2d channelsINTEL CORP·Filed 2022·Application pending·0 cites
- 1352US2024222461A1Beol contact metals for 2d transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 1452US2024113212A1Technologies for perovskite transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 1551US2023200081A1Transistor devices with perovskite filmsINTEL CORP·Filed 2021·Application pending·0 cites
- 1651US2024113220A1Technologies for transistors with a thin-film ferroelectricINTEL CORP·Filed 2022·Application pending·0 cites
- 1750US2024105810A1Vertical ferrorelectric field-effect transistor (fefet) devicesINTEL CORP·Filed 2022·Application pending·0 cites
- 1850US2024097031A1Ferrorelectric field-effect transistor (fefet) devices with low operating voltage capabilitiesINTEL CORP·Filed 2022·Application pending·0 cites
- 1949US2024105822A1Stacked perovskite ferroelectric field effect transistor (fefet) devicesINTEL CORP·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →