Inventor · disambiguated record
Ce Ma
Also filed as: MA CE
13 granted patents·19 pending applications·168 citations·filing 1997–2023
91Inventor score
Top patents by PatentIndex Score
32 records- 0188US7514119B2Method and apparatus for using solution based precursors for atomic layer depositionLINDE INC·Filed 2006·Granted Apr 7, 2009·16 cites·1 claims
- 0286US6440876B1Low-K dielectric constant CVD precursors formed of cyclic siloxanes having in-ring SI—O—C, and uses thereofBOC GROUP INC·Filed 2001·Granted Aug 27, 2002·37 cites·15 claims
- 0385US7947581B2Formation of graphene wafers on silicon substratesLINDE AG·Filed 2009·Granted May 24, 2011·10 cites·19 claims
- 0483US6649540B2Organosilane CVD precursors and their use for making organosilane polymer low-k dielectric filmBOC GROUP INC·Filed 2001·Granted Nov 18, 2003·30 cites·13 claims
- 0575US8261908B2Container for precursors used in deposition processesMA CE·Filed 2008·Granted Sep 11, 2012·3 cites·12 claims
- 0673US6572923B2Asymmetric organocyclosiloxanes and their use for making organosilicon polymer low-k dielectric filmBOC GROUP INC·Filed 2002·Granted Jun 3, 2003·16 cites·19 claims
- 0772US6012325AMethod and apparatus for measuring metallic impurities contained within a fluidBOC GROUP INC A DELAWARE CORP·Filed 1997·Granted Jan 11, 2000·45 cites·11 claims
- 0867US2023183068A1Novel method for pretreating and recovering a rare gas from a gas contaminant stream exiting an etch chamberLUNA JENNIFER BUGAYONG·Filed 2023·Application pending·0 cites
- 0965US6936537B2Methods for forming low-k dielectric filmsBOC GROUP INC·Filed 2002·Granted Aug 30, 2005·11 cites·30 claims
- 1060US11603313B2Method for pretreating and recovering a rare gas from a gas contaminant stream exiting an etch chamberLUNA JENNIFER BUGAYONG·Filed 2021·Granted Mar 14, 2023·0 cites·37 claims
- 1152US11796134B2Cylinder valves and methods for inhibiting the formation of contaminants in cylinders and cylinder valvesLINDE GMBH·Filed 2019·Granted Oct 24, 2023·0 cites·24 claims
- 1250US2010055321A1Precursors for atomic layer depositionMA CE·Filed 2007·Application pending·0 cites
- 1350US2010290945A1Solution based zirconium precursors for atomic layer depositionMA CE·Filed 2009·Application pending·0 cites
- 1450US2009305504A1Single precursors for atomic layer depositionMA CE·Filed 2007·Application pending·0 cites
- 1549US12494374B2Methods for gas phase selective etching of silicon-germanium layersPRAXAIR TECHNOLOGY INC·Filed 2021·Granted Dec 9, 2025·0 cites·22 claims
- 1649US2009117274A1Solution based lanthanum precursors for atomic layer depositionMA CE·Filed 2008·Application pending·0 cites
- 1749US2009220374A1Method and apparatus for using solution precursors for atomic layer depositionMA CE·Filed 2009·Application pending·0 cites
- 1847US2009068086A1Method and apparatus for the production of high purity tungsten hexafluorideHOGLE RICHARD ALLEN·Filed 2007·Application pending·0 cites
- 1947US2010036144A1Methods for atomic layer depositionMA CE·Filed 2007·Application pending·0 cites
- 2046US12410056B2Systems and processes for production of trisilylamineLINDE GMBH·Filed 2019·Granted Sep 9, 2025·0 cites·23 claims
- 2145US2005250347A1Method and apparatus for maintaining by-product volatility in deposition processBAILEY CHRISTOPHER M·Filed 2004·Application pending·0 cites
- 2245US2012295038A1Method and apparatus for using solution based precursors for atomic layer depositionMA CE·Filed 2011·Application pending·0 cites
- 2345US2012294753A1Method and apparatus for using solution based precursors for atomic layer depositionMA CE·Filed 2011·Application pending·0 cites
- 2445US2013125788A1Low-volatility compounds for use in forming deposited layersAITCHISON KENNETH·Filed 2013·Application pending·0 cites
- 2543US2011048283A1Low-volatility compounds for use in forming deposited layersAITCHISON KENNETH·Filed 2008·Application pending·0 cites
- 2640US2004187731A1Acid copper electroplating solutionsFiled 2004·Application pending·0 cites
- 2740US2010290968A1Solution based lanthanide and group iii precursors for atomic layer depositionMA CE·Filed 2009·Application pending·0 cites
- 2839US2010151261A1Methods and apparatus for the vaporization and delivery of solution precursors for atomic layer depositionMA CE·Filed 2007·Application pending·0 cites
- 2938US2007077778A1Method of forming low dielectric constant layerBOC GROUP INC·Filed 2005·Application pending·0 cites
- 3036US2015211126A1Direct liquid injection of solution based precursors for atomic layer depositionMA CE·Filed 2013·Application pending·0 cites
- 3135US2006071213A1Low temperature selective epitaxial growth of silicon germanium layersMA CE·Filed 2004·Application pending·0 cites
- 3232US8710253B2Solution based precursorsMA CE·Filed 2010·Granted Apr 29, 2014·0 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →