Inventor · disambiguated record
Chang-Min Bae
Also filed as: BAE CHANG-MIN
7 granted patents·3 pending applications·76 citations·filing 1998–2011
84Inventor score
Files withHYNIX SEMICONDUCTOR INC2MAGNACHIP SEMICONDUCTOR LTD2BAE CHANG-MIN1CROSSTEK CAPITAL LLC1HYUNDAI ELECTRONICS IND1
Top patents by PatentIndex Score
10 records- 0185US8045029B2CMOS image sensor for high speed signal processingINTELLECTUAL VENTURES II LLC·Filed 2005·Granted Oct 25, 2011·10 cites·15 claims
- 0284US6831580B2Digital-to-analog converter with linear amplification rateHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Dec 14, 2004·31 cites·8 claims
- 0377US7394491B2Image sensor having clamp circuitMAGNACHIP SEMICONDUCTOR LTD·Filed 2003·Granted Jul 1, 2008·18 cites·10 claims
- 0468US7948544B2CMOS image sensorCROSSTEK CAPITAL LLC·Filed 2005·Granted May 24, 2011·4 cites·36 claims
- 0563US6803802B2Switched-capacitor integratorHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Oct 12, 2004·9 cites·6 claims
- 0661US8482647B2CMOS image sensor for high speed signal processingKIM NAM-RYEOL·Filed 2011·Granted Jul 9, 2013·2 cites·23 claims
- 0741US2006186504A1CMOS image sensor for reducing partition noiseMAGNACHIP SEMICONDUCTOR LTD·Filed 2006·Application pending·0 cites
- 0840US2005237407A1CMOS image sensor for processing analog signal at high speedBAE CHANG-MIN·Filed 2005·Application pending·0 cites
- 0940US2005237406A1CMOS image sensor for processing analog signal at high speedKIM SONG-YI·Filed 2005·Application pending·0 cites
- 1030US6081011ACMOS logic gate having buried channel NMOS transistor for semiconductor devices and fabrication method of the sameHYUNDAI ELECTRONICS IND·Filed 1998·Granted Jun 27, 2000·2 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →