Inventor · disambiguated record
Chien-Tai Chan
Also filed as: CHAN CHIEN T · CHAN CHIEN-TAI
42 granted patents·10 pending applications·287 citations·filing 2005–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD33TAIWAN SEMICONDUCTOR MFG11TSAI CHUN HSIUNG3CHEN HUNG KAI1LEE TUNG YING1
Top patents by PatentIndex Score
52 records- 0198US9508556B1Method for fabricating fin field effect transistor and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 29, 2016·31 cites·20 claims
- 0297US9293534B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 22, 2016·27 cites·18 claims
- 0396US10153344B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·9 cites·19 claims
- 0496US9768256B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·10 cites·15 claims
- 0596US8426923B2Multiple-gate semiconductor device and methodLEE TUNG YING·Filed 2010·Granted Apr 23, 2013·31 cites·20 claims
- 0695US8759943B2Transistor having notched fin structure and method of making the sameTSENG CHIH-HUNG·Filed 2010·Granted Jun 24, 2014·48 cites·20 claims
- 0794US9129988B1FinFET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 8, 2015·17 cites·20 claims
- 0892US11195931B2Gate structure, semiconductor device and the method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·2 cites·20 claims
- 0992US8937353B2Dual epitaxial process for a finFET deviceCHEN HUNG-KAI·Filed 2010·Granted Jan 20, 2015·23 cites·18 claims
- 1090US9312179B2Method of making a finFET, and finFET formed by the methodLIN CHIA-PIN·Filed 2010·Granted Apr 12, 2016·11 cites·20 claims
- 1189US9722081B1FinFET device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·4 cites·18 claims
- 1289US9362404B2Doping for FinFETTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 7, 2016·8 cites·18 claims
- 1389US8785286B2Techniques for FinFET dopingTSAI CHUN HSIUNG·Filed 2010·Granted Jul 22, 2014·10 cites·18 claims
- 1487US8895383B2Multiple-gate semiconductor device and methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 25, 2014·7 cites·20 claims
- 1587US8357579B2Methods of forming integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Jan 22, 2013·8 cites·20 claims
- 1686US9373704B2Multiple-gate semiconductor device and methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 21, 2016·6 cites·20 claims
- 1786US8703593B2Techniques for FinFET dopingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 22, 2014·6 cites·9 claims
- 1883US9343575B1FinFET and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 17, 2016·3 cites·19 claims
- 1982US10276715B2Fin field effect transistor and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 30, 2019·3 cites·18 claims
- 2082US8187928B2Methods of forming integrated circuitsYu de-wei·Filed 2010·Granted May 29, 2012·8 cites·17 claims
- 2181US9537010B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·3 cites·18 claims
- 2280US2025338588A1Specialized transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2379US10224245B2Method of making a finFET, and finFET formed by the methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 5, 2019·2 cites·20 claims
- 2479US2024363736A1Variable size fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2578US9659776B2Doping for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·2 cites·20 claims
- 2677US9379208B2Integrated circuits and methods of forming integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 28, 2016·2 cites·20 claims
- 2776US9224737B2Dual epitaxial process for a finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 29, 2015·3 cites·20 claims
- 2876US2025359216A1Semiconductor structure with air spacer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2975US12087847B2Variable size fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 3074US11211455B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·0 cites·20 claims
- 3174US8884341B2Integrated circuitsTSAI CHUN HSIUNG·Filed 2011·Granted Nov 11, 2014·2 cites·20 claims
- 3272US11227951B2Method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·0 cites·20 claims
- 3372US2025254947A1Semiconductor device structure with epitaxial structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3471US2025063791A1Specialized transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3569US11380782B2Variable size fin structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 5, 2022·0 cites·20 claims
- 3668US12283610B2Structure and formation method of semiconductor device with epitaxial structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 22, 2025·0 cites·20 claims
- 3765US10741642B2Formation of dislocations in source and drain regions of finFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·0 cites·20 claims
- 3865US2025015132A1Semiconductor structure with air spacer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3963US10665717B2Semiconductor device and FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·0 cites·20 claims
- 4063US10515856B2Method of making a FinFET, and FinFET formed by the methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 24, 2019·0 cites·20 claims
- 4163US7994016B2Method for obtaining quality ultra-shallow doped regions and device having sameTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Aug 9, 2011·1 cites·14 claims
- 4262US10749008B2Gate structure, semiconductor device and the method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·0 cites·20 claims
- 4361US10062780B2FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·0 cites·17 claims
- 4459US2025338558A1Integrated circuit with ion implantation in ildTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4557US10141417B2Gate structure, semiconductor device and the method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 27, 2018·0 cites·20 claims
- 4656US11935954B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·20 claims
- 4756US9865732B2Integrated circuits and methods of forming integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·0 cites·19 claims
- 4849US8951875B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 10, 2015·0 cites·16 claims
- 4944US10504898B2Fin field-effect transistor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 10, 2019·0 cites·20 claims
- 5037US2011295539A1Method and apparatus for measuring intra-die temperatureTSAI CHUN HSIUNG·Filed 2010·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →