Inventor · disambiguated record
Cheng-Hung Chang
Also filed as: CHANG CHENG-HUNG
49 granted patents·9 pending applications·816 citations·filing 2000–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG13CHANG CHENG-HUNG12TAIWAN SEMICONDUCTOR MFG CO LTD10SECURITAG ASSEMBLY GROUP CO LTD5YU CHEN-HUA4
Top patents by PatentIndex Score
58 records- 0199US8048723B2Germanium FinFETs having dielectric punch-through stoppersTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 1, 2011·265 cites·17 claims
- 0298US8106459B2FinFETs having dielectric punch-through stoppersCHANG CHENG-HUNG·Filed 2008·Granted Jan 31, 2012·97 cites·9 claims
- 0397US8263462B2Dielectric punch-through stoppers for forming FinFETs having dual fin heightsHUNG SHIH-TING·Filed 2008·Granted Sep 11, 2012·68 cites·11 claims
- 0496US9299785B2Reducing resistance in source and drain regions of FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 29, 2016·12 cites·20 claims
- 0596US8957477B2Germanium FinFETs having dielectric punch-through stoppersCHANG CHENG-HUNG·Filed 2011·Granted Feb 17, 2015·23 cites·17 claims
- 0696US7939889B2Reducing resistance in source and drain regions of FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 10, 2011·36 cites·18 claims
- 0794US10312327B2FinFETs having dielectric punch-through stoppersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 4, 2019·7 cites·20 claims
- 0894US9735042B2Dielectric punch-through stoppers for forming FinFETs having dual Fin heightsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 15, 2017·10 cites·20 claims
- 0994US8293616B2Methods of fabrication of semiconductor devices with low capacitanceCHANG CHENG-HUNG·Filed 2009·Granted Oct 23, 2012·25 cites·19 claims
- 1093US9076689B2Reducing resistance in source and drain regions of FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 7, 2015·12 cites·20 claims
- 1193US8644904B2Dry electrodeCHANG CHENG-HUNG·Filed 2009·Granted Feb 4, 2014·28 cites·13 claims
- 1293US7910994B2System and method for source/drain contact processingTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 22, 2011·21 cites·20 claims
- 1392US9230959B2FinFETs having dielectric punch-through stoppersCHANG CHENG-HUNG·Filed 2011·Granted Jan 5, 2016·10 cites·19 claims
- 1491US9048259B2Dielectric punch-through stoppers for forming FinFETs having dual fin heightsHUNG SHIH-TING·Filed 2012·Granted Jun 2, 2015·11 cites·19 claims
- 1590US8617948B2Reducing resistance in source and drain regions of FinFETsYU CHEN-HUA·Filed 2011·Granted Dec 31, 2013·8 cites·15 claims
- 1690US8487410B2Through-silicon vias for semicondcutor substrate and method of manufactureYU CHEN-HUA·Filed 2011·Granted Jul 16, 2013·8 cites·9 claims
- 1788US9054194B2Non-planar transistors and methods of fabrication thereofTUNG CHIH-HANG·Filed 2010·Granted Jun 9, 2015·13 cites·20 claims
- 1886US9722025B2FinFETs having dielectric punch-through stoppersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·3 cites·19 claims
- 1986US7745890B2Hybrid metal fully silicided (FUSI) gateTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 29, 2010·11 cites·20 claims
- 2085US7119404B2High performance strained channel MOSFETs by coupled stress effectsTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 10, 2006·35 cites·27 claims
- 2184US9619743B1RFID device and method for making the sameSECURITAG ASSEMBLY GROUP CO LTD·Filed 2016·Granted Apr 11, 2017·7 cites·31 claims
- 2284US8883597B2Method of fabrication of a FinFET elementCHANG CHENG-HUNG·Filed 2007·Granted Nov 11, 2014·13 cites·12 claims
- 2384US6383554B1Process for fabricating plasma with feedback control on plasma densityNAT SCIENCE COUNCIL·Filed 2000·Granted May 7, 2002·37 cites·7 claims
- 2482US7160800B2Decreasing metal-silicide oxidation during wafer queue timeTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jan 9, 2007·8 cites·20 claims
- 2580US11114563B2Semiconductor devices with low junction capacitances and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 7, 2021·2 cites·20 claims
- 2680US9735276B2Non-planar transistors and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 15, 2017·3 cites·20 claims
- 2780US8143114B2System and method for source/drain contact processingYU CHEN-HUA·Filed 2011·Granted Mar 27, 2012·4 cites·20 claims
- 2877US10784162B2Method of making a semiconductor component having through-silicon viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·1 cites·20 claims
- 2977US10166707B2RFID device and method for making the sameSECURITAG ASSEMBLY GROUP CO LTD·Filed 2017·Granted Jan 1, 2019·3 cites·14 claims
- 3077US7199383B2Method for reducing particles during ion implantationUNITED MICROELECTRONICS CORP·Filed 2005·Granted Apr 3, 2007·6 cites·19 claims
- 3173US11545392B2Semiconductor component having through-silicon viasTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 3, 2023·0 cites·20 claims
- 3273US10115634B2Semiconductor component having through-silicon vias and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 30, 2018·1 cites·20 claims
- 3370US10242308B2RFID sensing and recording device and method for making the sameSECURITAG ASSEMBLY GROUP CO LTD·Filed 2017·Granted Mar 26, 2019·2 cites·12 claims
- 3470US8306597B2Physiological signal sensing deviceCHANG WEN-YING·Filed 2010·Granted Nov 6, 2012·6 cites·27 claims
- 3569US9411070B2Extendable wireless soil measurement apparatusCHANG CHENG-HUNG·Filed 2013·Granted Aug 9, 2016·7 cites·9 claims
- 3668US9418923B2Semiconductor component having through-silicon vias and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 16, 2016·1 cites·7 claims
- 3768US8575725B2Through-silicon vias for semicondcutor substrate and method of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 5, 2013·1 cites·21 claims
- 3867US2025272528A1Rfid yarn module and method for making the sameSECURITAG ASSEMBLY GROUP CO LTD·Filed 2025·Application pending·0 cites
- 3966US11133387B2FinFETs having dielectric punch-through stoppersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims
- 4065US8519792B2Differential voltage sensing system and method for using the sameCHANG WEN YING·Filed 2010·Granted Aug 27, 2013·3 cites·8 claims
- 4164US9935197B2Semiconductor devices with low junction capacitancesCHANG CHENG HUNG·Filed 2012·Granted Apr 3, 2018·1 cites·20 claims
- 4263US12361246B2RFID yarn module and method for making the sameSECURITAG ASSEMBLY GROUP CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·6 claims
- 4363US7518130B2Ion beam blocking component and ion beam blocking device having the sameUNITED MICROELECTRONICS CORP·Filed 2007·Granted Apr 14, 2009·2 cites·16 claims
- 4461US8442628B2Differential voltage sensing methodCHANG WEN YING·Filed 2012·Granted May 14, 2013·2 cites·7 claims
- 4560US7732298B2Metal salicide formation having nitride liner to reduce silicide stringer and encroachmentTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jun 8, 2010·2 cites·18 claims
- 4656US9553628B1Phone case capable of measuring distance to objectCOMAX HARDWARE CO LTD·Filed 2015·Granted Jan 24, 2017·1 cites·2 claims
- 4754US2007149282A1Interactive gaming method and apparatus with emotion perception abilityIND TECH RES INST·Filed 2006·Application pending·0 cites
- 4852US11038056B2System and method for source/drain contact processingYU CHEN HUA·Filed 2012·Granted Jun 15, 2021·0 cites·20 claims
- 4951US8093883B2Ion current measurement deviceCHEN JUI-FANG·Filed 2008·Granted Jan 10, 2012·0 cites·19 claims
- 5049US2015204041A1Two-tier wireless soil measurement apparatusCHANG CHENG-HUNG·Filed 2014·Application pending·0 cites
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →