Inventor · disambiguated record

Chai-Wei Chang

Also filed as: CHANG CHAI-WEI

36 granted patents·4 pending applications·187 citations·filing 2007–2024

97Inventor score

Technology areasH10P H10D H01L B82Y G03F

Files withTAIWAN SEMICONDUCTOR MFG CO LTD37 TAIWAN SEMICONDUCTOR MFG2 TAIWAN SEMICONDUCTOR MANFACTURING CO LTD1

Top patents by PatentIndex Score

40 records

0198US9418994B1Fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 16, 2016·71 cites·19 claims
0296US11532748B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
0396US10411113B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 10, 2019·12 cites·20 claims
0495US10262870B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 16, 2019·13 cites·20 claims
0594US9818648B2Method for forming Fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·11 cites·18 claims
0693US10483370B2Semiconductor structure with unleveled gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·7 cites·20 claims
0793US9583485B2Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 28, 2017·8 cites·19 claims
0892US12002872B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·1 cites·20 claims
0992US10854519B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·6 cites·20 claims
1091US11764280B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 19, 2023·2 cites·20 claims
1190US10468407B2Fin field effect transistor (FinFET) device structure with uneven gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·5 cites·19 claims
1290US9818841B2Semiconductor structure with unleveled gate structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 14, 2017·5 cites·19 claims
1390US9660084B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·5 cites·20 claims
1490US9577067B2Metal gate and manufuacturing process thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·10 cites·18 claims
1589US10269963B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
1689US10090396B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 2, 2018·4 cites·20 claims
1788US11444176B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 13, 2022·3 cites·20 claims
1886US2024372000A1Semiconductor Device Structure and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1986US2024387678A1Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2085US12159916B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
2185US9793269B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 17, 2017·5 cites·20 claims
2285US2024371698A1Method for forming semiconductor device structure with gate and resulting structuresTAIWAN SEMICONDUCTOR MANFACTURING CO LTD·Filed 2024·Application pending·0 cites
2384US10269651B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 23, 2019·3 cites·20 claims
2481US12136572B2Method for forming semiconductor device structure with gate and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
2581US9799565B2Method for forming semiconductor device structure with gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 24, 2017·2 cites·20 claims
2680US12100765B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 24, 2024·0 cites·20 claims
2779US11469145B2Method for forming semiconductor device structure with gate and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 11, 2022·1 cites·20 claims
2878US11854825B2Gate structure of semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
2978US10790394B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·1 cites·20 claims
3076US11139295B2Fin field effect transistor (FinFET) device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 5, 2021·1 cites·20 claims
3173US7917244B2Method and system for reducing critical dimension side-to-side tilting errorTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Mar 29, 2011·3 cites·19 claims
3272US11309189B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·20 claims
3368US10312149B1Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 4, 2019·1 cites·20 claims
3464US11271089B2Method for manufacturing semiconductor structure with unleveled gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 8, 2022·0 cites·20 claims
3564US11133400B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims
3664US10741408B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 11, 2020·0 cites·20 claims
3763US10714587B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·0 cites·20 claims
3862US10522411B2Method for forming semiconductor device structure with gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 31, 2019·0 cites·20 claims
3957US10269794B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
4049US2010119958A1Mask blank, mask formed from the blank, and method of forming a maskTAIWAN SEMICONDUCTOR MFG·Filed 2008·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →