Inventor · disambiguated record
Cheng-Wei Chang
Also filed as: CHANG CHENG-WEI · CHANG CHENG-WEI T · CHANG CHENG-WEI TOM
62 granted patents·50 pending applications·93 citations·filing 2006–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD74CHANG CHENG-WEI4INNOLUX CORP4UNIV UTAH STATE4WISTRON CORP4
Top patents by PatentIndex Score
112 records- 0197US11462471B2Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·6 cites·20 claims
- 0295US11973124B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·2 cites·20 claims
- 0395US11652149B2Common rail contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 16, 2023·6 cites·20 claims
- 0495US11563083B2Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·3 cites·20 claims
- 0591US10037918B2Contact structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·7 cites·20 claims
- 0691US2025366038A1Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0789US10685842B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·4 cites·20 claims
- 0887US7572033B2Light source module with high heat-dissipation efficiencyFOXSEMICON INTEGRATED TECH INC·Filed 2007·Granted Aug 11, 2009·30 cites·20 claims
- 0986US12512324B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 30, 2025·0 cites·20 claims
- 1085US12334435B2Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1184US11232945B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·1 cites·20 claims
- 1284US2025351457A1Transistor insulating finsTAIWAN SEMICONDUCTOR MANFACTURING CO LTD·Filed 2025·Application pending·0 cites
- 1383US12400853B2Method of forming conductive feature including cleaning stepTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 1483US12219843B2Tiled device and electronic deviceINNOLUX CORP·Filed 2024·Granted Feb 4, 2025·0 cites·8 claims
- 1583US11894437B2Hybrid conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·1 cites·20 claims
- 1683US11209050B1Contamination-resistant bearing assemblyTHAI DIENG IND CO LTD·Filed 2020·Granted Dec 28, 2021·2 cites·11 claims
- 1782US12300539B2Source/drain contact formation methods and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1882US11295956B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·1 cites·20 claims
- 1982US10915147B2Portable electronic device and method of controlling an image of a display moduleWISTRON CORP·Filed 2018·Granted Feb 9, 2021·4 cites·15 claims
- 2082US9890329B2Quantum dot nanocrystal structureUNIV NAT TSING HUA·Filed 2015·Granted Feb 13, 2018·5 cites·12 claims
- 2182US2025366093A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2282US2025359136A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2382US2025273514A1Source/drain contact formation methods and devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2481US11348993B2Tiled device and electronic device including conductive wire with openingsINNOLUX CORP·Filed 2019·Granted May 31, 2022·2 cites·21 claims
- 2581US10741915B2Antenna structure and mobile deviceWISTRON NEWEB CORP·Filed 2019·Granted Aug 11, 2020·3 cites·20 claims
- 2681US2025366099A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2781US2025359171A1Multi-Gate Semiconductor Device And Fabrication Method ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2881US2025279353A1Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2980US12046634B2Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·0 cites·20 claims
- 3080US2025359258A1Semiconductor device having improved gate stacks and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3180US2025351540A1Wavy-shaped epitaxial source/drain structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3280US2025357344A1Semiconductor device with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3380US2025359111A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3479US12170325B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 3579US11955329B2Method of forming conductive feature including cleaning stepTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 3679US2025351477A1Isolation structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3779US2025072027A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3879US2024379797A1Transistor insulating finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3979US2025338561A1Isolation for Multigate DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4078US11996333B2Source/drain EPI structure for improving contact qualityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·0 cites·20 claims
- 4178US9242932B2Meso-biliverdin compositions and methodsUNIV UTAH STATE·Filed 2012·Granted Jan 26, 2016·2 cites·13 claims
- 4278US2025344436A1Source/Drain Contacts And Methods For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4378US2025344487A1Multi-gate device fabrication methods and related structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4478US2024312844A1Source/drain epi structure for improving contact qualityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4578US2025351424A1Void-free conductive contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4677US12087575B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 4777US12009294B2Middle-of-line interconnect structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·0 cites·20 claims
- 4877US11972951B2Selective formation of titanium silicide and titanium nitride by hydrogen gas controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 4977US2024387655A1Common rail contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5077US2025324704A1Semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 112 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →