Inventor · disambiguated record
Che-Hao Chang
Also filed as: CHANG CHE-HAO
49 granted patents·33 pending applications·67 citations·filing 1999–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD73CHICONY POWER TECH CO LTD2ACADEMIA SINICA1CHANG CHE-HAO1PERFECT365 TECH COMPANY LTD1
Top patents by PatentIndex Score
82 records- 0197US11664441B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·4 cites·20 claims
- 0297US11437492B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·4 cites·20 claims
- 0397US11316034B2Post-formation mends of dielectric featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·3 cites·20 claims
- 0496US11923432B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 5, 2024·4 cites·20 claims
- 0596US11916132B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
- 0696US11710782B2Post-formation mends of dielectric featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 25, 2023·2 cites·20 claims
- 0796US11469229B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 11, 2022·3 cites·20 claims
- 0895US10468258B1Passivator for gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·15 cites·20 claims
- 0991US11901439B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
- 1090US11699621B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 11, 2023·1 cites·20 claims
- 1190US11444177B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·2 cites·20 claims
- 1289US12477775B2Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 18, 2025·1 cites·20 claims
- 1388US10964543B2Passivator for gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·4 cites·20 claims
- 1488US10504795B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·3 cites·20 claims
- 1586US2025351453A1Transistor gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1686US2025351528A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1785US12501697B2Methods of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 1884US2024387704A1Method of gap filling for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1983US12363979B2Nanosheet field-effect transistor device including multi-layer spacer film and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 2083US2025301746A1Reducing k values of dielectric films through annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2183US2024387705A1Post-formation mends of dielectric featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2282US12426335B2Reducing k values of dielectric films through annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 2382US12288814B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 29, 2025·0 cites·20 claims
- 2482US12206013B2Post-formation mends of dielectric featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 2581US12324208B2Method for manufacturing semiconductor device including annealing treatment of inner spacer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 2680US12249639B2Semiconductor device including multiple inner spacers with different etch rates and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Mar 11, 2025·0 cites·20 claims
- 2780US10867869B2Method for patterning a lanthanum containing layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·1 cites·21 claims
- 2880US2025351522A1Under epitaxy isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2980US2025351476A1Semiconductor Device Including Air Spacer and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3079US2024387681A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3179US2024379798A1Transistor gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3278US12015031B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 3378US12009407B2Nanosheet field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 3478US2025338554A1Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3578US2025359178A1Profile control of isolation structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3678US2025311267A1Dummy fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3777US2025338589A1Nanostructure field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3876US12272735B2Transistor gate structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 3976US2025126822A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4075US2025194202A1Semiconductor Device Including Multiple Inner Spacers with Different Etch Rates and Method of MakingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4174US12206012B2Reducing K values of dielectric films through annealTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 21, 2025·0 cites·20 claims
- 4274US11824104B2Method of gap filling for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·0 cites·20 claims
- 4374US2023268416A1Semiconductor Devices and Methods of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4473US2024297084A1High-K Gate Dielectric and Method Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4573US2024371975A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4671US11545559B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 4770US12218221B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 4, 2025·0 cites·20 claims
- 4868US12495568B2Dummy Fin structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 4968US12020991B2High-k gate dielectric and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 25, 2024·0 cites·20 claims
- 5068US10540697B2Method and system for a styling platformPERFECT365 TECH COMPANY LTD·Filed 2017·Granted Jan 21, 2020·3 cites·20 claims
Showing the top 50 of 82 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →