Inventor · disambiguated record

Chia-Der Chang

Also filed as: CHANG CHIA-DER

37 granted patents·4 pending applications·98 citations·filing 1999–2025

96Inventor score

Technology areasH10P H01L H10D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD36 TAIWAN SEMICONDUCTOR MFG3 LI SHERRY1 TAIWAN SEMICONDUCTOR MFG LTD1

Top patents by PatentIndex Score

41 records

0191US10276680B2Gate feature in FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·4 cites·19 claims
0291US9478626B2Semiconductor device with an interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 25, 2016·8 cites·19 claims
0389US11521969B2Isolation structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·2 cites·20 claims
0489US10665686B2Gate feature in finFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 26, 2020·3 cites·20 claims
0588US11862683B2Ultra-thin fin structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·1 cites·20 claims
0688US7714392B2Method for forming an improved low power SRAM contactTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted May 11, 2010·13 cites·4 claims
0786US9911650B2Semiconductor device with an interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 6, 2018·3 cites·20 claims
0886US7232762B2Method for forming an improved low power SRAM contactTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jun 19, 2007·34 cites·27 claims
0983US12495607B2Isolation structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 9, 2025·0 cites·20 claims
1083US12363958B2Ultra-thin fin structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
1183US2025301714A1Ultra-thin fin structure and method of fabricating the sameLI SHERRY·Filed 2025·Application pending·0 cites
1281US11189697B2Ultra-thin fin structure and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 30, 2021·1 cites·20 claims
1381US9231098B2Mechanism for forming metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 5, 2016·5 cites·20 claims
1481US2023207649A1Novel gate feature in finfet deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
1579US9941152B2Mechanism for forming metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 10, 2018·2 cites·20 claims
1675US11594607B2Gate feature in FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
1773US10910479B2Gate feature in FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 2, 2021·0 cites·20 claims
1873US9564510B2Method of fabricating a MOSFET with an undoped channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 7, 2017·2 cites·20 claims
1972US9136356B2Non-planar field effect transistor having a semiconductor fin and method for manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 15, 2015·2 cites·20 claims
2071US2024154028A1Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2168US9331178B2Method for manufacturing non-planar field effect transistor having a semiconductor finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 3, 2016·1 cites·20 claims
2266US11177173B2Semiconductor device with an interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·0 cites·20 claims
2365US11923436B2Source/drain structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
2465US2022367633A1Source/drain structure for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
2564US11664423B2Method for forming a source/drain of a semiconductor device having an insulating stack in a recess structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 30, 2023·0 cites·20 claims
2663US9748232B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 29, 2017·1 cites·20 claims
2761US10468299B2Semiconductor device with an interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·0 cites·20 claims
2860US12057449B2Isolation structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
2957US10115596B2Method of fabricating a semiconductor device having a T-shape in the metal gate line-endTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 30, 2018·0 cites·20 claims
3054US9923056B2Method of fabricating a MOSFET with an undoped channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 20, 2018·0 cites·20 claims
3154US9780213B2Semiconductor device having a reversed T-shaped profile in the metal gate line-endTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 3, 2017·0 cites·20 claims
3254US9564332B2Mechanism for forming metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 7, 2017·0 cites·20 claims
3350US10083959B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·0 cites·20 claims
3448US10056462B2Metal gate structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 21, 2018·0 cites·19 claims
3547US9496367B2Mechanism for forming metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 15, 2016·0 cites·17 claims
3647US6774042B1Planarization method for deep sub micron shallow trench isolation processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Aug 10, 2004·2 cites·19 claims
3745US10763280B2Hybrid FinFET structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·0 cites·19 claims
3844US10090397B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 2, 2018·0 cites·20 claims
3943US9570584B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 14, 2017·0 cites·18 claims
4043US6143579AEfficient method for monitoring gate oxide damage related to plasma etch chamber processing historyTAIWAN SEMICONDUCTOR MFG LTD·Filed 1999·Granted Nov 7, 2000·14 cites·20 claims
4136US9577026B2MIM capacitor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 21, 2017·0 cites·20 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →