Inventor · disambiguated record
Che-Lun Chang
Also filed as: CHANG CHE-LUN
19 granted patents·16 pending applications·67 citations·filing 2016–2025
92Inventor score
Top patents by PatentIndex Score
35 records- 0198US11935781B2Integrated circuit structure with backside dielectric layer having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·5 cites·20 claims
- 0295US11450559B2Integrated circuit structure with backside dielectric layer having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·3 cites·20 claims
- 0394US11437245B2Germanium hump reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·5 cites·20 claims
- 0494US11417767B2Semiconductor devices including backside vias and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 16, 2022·3 cites·20 claims
- 0592US12040407B2Semiconductor devices including backside vias and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·1 cites·20 claims
- 0690US11316030B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 0789US11616133B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 28, 2023·1 cites·20 claims
- 0886US11862709B2Inner spacer structure and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·1 cites·20 claims
- 0985USD816018STire treadFED CORPORATION·Filed 2017·Granted Apr 24, 2018·35 cites·1 claims
- 1084US12308287B2Integrated circuit structure with backside dielectric layer having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 1184US12310057B2Semiconductor devices including backside vias and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 1281US12255102B2Methods of forming of inner spacer structure using semiconductor material with variable germanium concentrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 1381US2025366042A1Gate-all-around devices and methods for manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1481US2025359165A1Methods of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1580US2025254913A1Semiconductor Devices Including Backside Vias and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1680US2025359212A1Method of forming a gap under a source/drain feature of a multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1780US2025266293A1Integrated circuit structure with backside dielectric layer having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1878US2024371649A1Cmp process and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1977US12131911B2CMP process and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 29, 2024·0 cites·20 claims
- 2076US2025212498A1Inner spacer structure and methods of forming suchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2175US2024297038A1Dielectric layer, interconnection structure using the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2273US2025311301A1Gate-all-around devices and methods for manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2372US11387109B1CMP process and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 12, 2022·0 cites·20 claims
- 2470US12014919B2Dielectric layer, interconnection structure using the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·0 cites·20 claims
- 2569US12453127B2Methods of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 2666US11854819B2Germanium hump reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 2762USD811314STire treadFED CORPORATION·Filed 2017·Granted Feb 27, 2018·11 cites·1 claims
- 2862US2025374632A1Structure and formation method of semiconductor device with semiconductor nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2959US10950426B2Dielectric layer, interconnection structure using the same, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 16, 2021·0 cites·20 claims
- 3056US2025063779A1Devices and methods for forming devices with inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3154US2024047546A1Integrated circuit structure with backside viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3254US2024113214A1Semiconductor structure with dielectric spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3354US2024105806A1Multi-Gate Devices And Method Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3454US2024113203A1Spacer formation method for multi-gate device and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3538US2017112444A1Bio-signal sensorUNIV NAT CHIAO TUNG·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →