Inventor · disambiguated record

Chun-Yuan Chen

Also filed as: CHEN CHUN · CHEN CHUN-YUAN

116 granted patents·86 pending applications·268 citations·filing 1999–2025

99Inventor score

Technology areasH10W H10D H10F H10P H01L

Files withTAIWAN SEMICONDUCTOR MFG CO LTD163 AU OPTRONICS CORP10 ACES ELECTRONICS CO LTD5 Chen chun yuan5 L & K PREC INDUSTRY CO LTD2

Top patents by PatentIndex Score

202 records

0199US11450751B2Integrated circuit structure with backside via railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·8 cites·20 claims
0299US11443987B2Semiconductor devices with backside air gap dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·6 cites·20 claims
0399US11233005B1Method for manufacturing an anchor-shaped backside viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·7 cites·20 claims
0499US11195930B1Semiconductor devices with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·17 cites·20 claims
0598US11621197B2Semiconductor device with gate cut feature and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·5 cites·20 claims
0698US11482595B1Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 25, 2022·4 cites·20 claims
0798US11222892B2Backside power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 11, 2022·16 cites·20 claims
0897US11848372B2Method and structure for reducing source/drain contact resistance at wafer backsideTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·3 cites·20 claims
0997US11791357B2Composite BSI structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·5 cites·20 claims
1097US11664280B2Semiconductor devices with backside air gap dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 30, 2023·2 cites·20 claims
1197US11532744B2Gate cut structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·4 cites·20 claims
1296US11942530B2Semiconductor devices with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·2 cites·20 claims
1395US11227889B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
1495US10304886B2Back-side deep trench isolation (BDTI) structure for pinned photodiode image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·12 cites·20 claims
1595US10276618B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·8 cites·20 claims
1694US11916100B2Multi-layer trench capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·2 cites·20 claims
1794US11777003B2Semiconductor structure with wraparound backside amorphous layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
1894US11211419B2Composite bsi structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·4 cites·20 claims
1994US10461109B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·9 cites·20 claims
2093US11955515B2Dual side contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·1 cites·20 claims
2193US11721774B2Full well capacity for image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·3 cites·20 claims
2293US11430823B2Method for manufacturing semiconductor image sensor device having deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·2 cites·20 claims
2393US11404460B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
2493US9954022B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·7 cites·20 claims
2592US11658119B2Backside signal interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·2 cites·20 claims
2692US10825853B2Semiconductor image sensor device with deep trench isolations and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 3, 2020·3 cites·20 claims
2791US11804486B2Backside power rail and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·1 cites·20 claims
2891US2025366150A1Dual side contact structures in semiconductor devicesTAIWAN CEMICONDUCTOR MFG COMPANY LTD·Filed 2025·Application pending·0 cites
2991US2025359290A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3090US11631638B2Semiconductor structure having an anchor-shaped backside viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 18, 2023·1 cites·20 claims
3190US11387233B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
3289US12356688B2Method for forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 8, 2025·1 cites·20 claims
3389US11984465B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·1 cites·20 claims
3489US10014340B2Stacked SPAD image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 3, 2018·7 cites·20 claims
3589US2025351596A1Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3688US10727265B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·3 cites·20 claims
3787US12302607B2Backside gate contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
3887US12057341B2Semiconductor device with gate cut structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·1 cites·20 claims
3986US12457794B2Dual side contact structures for source/drain regions in semiconductor transistor devices and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
4086US12211876B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
4186US11658226B2Backside gate contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·1 cites·20 claims
4285US12464839B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
4385US12382709B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
4485US12125852B2Multi-gate transistors with backside power rail and reduced gate-drain capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
4585US11978773B2Formation method of semiconductor device structure with semiconductor nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·1 cites·20 claims
4685US11430789B2Semiconductor devices with backside contacts and isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·1 cites·20 claims
4785US10510789B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
4885US9812483B2Back-side illuminated (BSI) image sensor with global shutter schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·4 cites·20 claims
4985US8888508B2Board-to-board connectorACES ELECTRONICS CO LTD·Filed 2013·Granted Nov 18, 2014·14 cites·12 claims
5085US2025331213A1Method Of Forming A Semiconductor Structure Including A Source/DrainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites

Showing the top 50 of 202 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →