Inventor · disambiguated record
Chao-Cheng Chen
Also filed as: CHEN CHAO · CHEN CHAO-CHENG
220 granted patents·40 pending applications·2,672 citations·filing 1997–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD144TAIWAN SEMICONDUCTOR MFG68URSROBOT AI INC8CHEN CHAO CHENG6HSIEH TZU-YEN3
Top patents by PatentIndex Score
260 records- 0198US9214358B1Equal gate height control method for semiconductor device with different pattern densitesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 15, 2015·43 cites·20 claims
- 0297US9536980B1Gate spacers and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·44 cites·20 claims
- 0397US9245883B1Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 26, 2016·30 cites·11 claims
- 0497US6323121B1Fully dry post-via-etch cleaning method for a damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 27, 2001·206 cites·22 claims
- 0596US12040359B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 16, 2024·2 cites·20 claims
- 0696US11908920B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
- 0796US9825173B2FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 21, 2017·11 cites·20 claims
- 0896US9761684B2Method and structure for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·26 cites·20 claims
- 0996US6277752B1Multiple etch method for forming residue free patterned hard mask layerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 21, 2001·287 cites·17 claims
- 1095US11961899B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 16, 2024·2 cites·20 claims
- 1195US11908903B2Process window control for gate formation in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·2 cites·20 claims
- 1295US11908746B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·2 cites·20 claims
- 1395US11563105B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 24, 2023·3 cites·20 claims
- 1495US9431304B2Method and structure for metal gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 30, 2016·28 cites·20 claims
- 1595US9041125B2Fin shape for fin field-effect transistors and method of formingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 26, 2015·17 cites·20 claims
- 1695US8748989B2Fin field effect transistorsLin yu chao·Filed 2012·Granted Jun 10, 2014·24 cites·20 claims
- 1795US8507979B1Semiconductor integrated circuit with metal gateHUANG YUAN-SHENG·Filed 2012·Granted Aug 13, 2013·50 cites·20 claims
- 1894US11721741B2Field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·2 cites·20 claims
- 1994US9934971B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 3, 2018·6 cites·20 claims
- 2094US9190496B2Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·14 cites·20 claims
- 2194US7759239B1Method of reducing a critical dimension of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jul 20, 2010·36 cites·20 claims
- 2294US6440863B1Plasma etch method for forming patterned oxygen containing plasma etchable layerTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Aug 27, 2002·246 cites·15 claims
- 2393US9640398B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 2, 2017·6 cites·20 claims
- 2493US9460968B2Fin shape for fin field-effect transistors and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·8 cites·20 claims
- 2593US9412666B2Equal gate height control method for semiconductor device with different pattern densitesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·7 cites·20 claims
- 2693US8900937B2FinFET device structure and methods of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·15 cites·22 claims
- 2793US8053323B1Patterning methodology for uniformity controlTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 8, 2011·15 cites·20 claims
- 2892US11462408B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·2 cites·20 claims
- 2992US9923079B2Composite dummy gate with conformal polysilicon layer for FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 20, 2018·8 cites·20 claims
- 3092US8772183B2Method of forming an integrated circuitHSIEH TZU-YEN·Filed 2011·Granted Jul 8, 2014·11 cites·20 claims
- 3191US8120094B2Shallow trench isolation with improved structure and method of formingLIAW JHON-JHY·Filed 2007·Granted Feb 21, 2012·18 cites·19 claims
- 3290US11749681B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·2 cites·20 claims
- 3390US11309403B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·2 cites·20 claims
- 3490US10868139B2Controlling profiles of replacement gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·4 cites·18 claims
- 3590US10665457B2Method of forming an integrated circuit using a patterned mask layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·3 cites·20 claims
- 3690US10658509B2FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 19, 2020·4 cites·20 claims
- 3790US9947764B2Dummy gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 17, 2018·5 cites·19 claims
- 3890US9337195B2Semiconductor devices and methods of manufacture thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 10, 2016·11 cites·20 claims
- 3990US9128384B2Method of forming a patternTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 8, 2015·9 cites·16 claims
- 4090US9123743B2FinFETs and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 1, 2015·9 cites·20 claims
- 4190US8273632B2Patterning methodology for uniformity controlLin yu chao·Filed 2011·Granted Sep 25, 2012·12 cites·20 claims
- 4290US6025273AMethod for etching reliable small contact holes with improved profiles for semiconductor integrated circuits using a carbon doped hard maskTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Feb 15, 2000·107 cites·22 claims
- 4390US5970376APost via etch plasma treatment method for forming with attenuated lateral etching a residue free via through a silsesquioxane spin-on-glass (SOG) dielectric layerTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 19, 1999·116 cites·13 claims
- 4489US10418460B2Dummy gate structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·4 cites·20 claims
- 4589US9633905B2Semiconductor fin structures and methods for forming the sameCHEN RYAN CHIA-JEN·Filed 2012·Granted Apr 25, 2017·8 cites·9 claims
- 4689US9595443B2Metal gate structure of a semiconductor deviceZHU MING·Filed 2011·Granted Mar 14, 2017·8 cites·20 claims
- 4789US9496372B2Method of making a FinFET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 15, 2016·4 cites·20 claims
- 4888US7511349B2Contact or via hole structure with enlarged bottom critical dimensionTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 31, 2009·17 cites·16 claims
- 4988US6444517B1High Q inductor with Cu damascene via/trench etching simultaneous moduleTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 3, 2002·58 cites·31 claims
- 5088US6040248AChemistry for etching organic low-k materialsTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 21, 2000·92 cites·18 claims
Showing the top 50 of 260 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →