Inventor · disambiguated record
Chung-Zen Chen
Also filed as: CHEN CHUNG JU · CHEN CHUNG-ZEN
71 granted patents·3 pending applications·875 citations·filing 1993–2025
99Inventor score
Files withELITE SEMICONDUCTOR ESMT28CHEN CHUNG ZEN15VANGUARD INT SEMICONDUCT CORP11WINBOND ELECTRONICS CORP8CONVERSANT INTELLECTUAL PROPERTY MAN INC3
Top patents by PatentIndex Score
74 records- 0188US7359248B2Methods for programming and reading NAND flash memory device and page buffer performing the sameELITE SEMICONDUCTOR ESMT·Filed 2006·Granted Apr 15, 2008·23 cites·18 claims
- 0287US7336532B2Method for reading NAND memory device and memory cell array thereofELITE SEMICONDUCTOR MEMORY·Filed 2006·Granted Feb 26, 2008·28 cites·23 claims
- 0386US6421295B1DRAM circuit and its sub-word line driverELITE SEMICONDUCTOR ESMT·Filed 2001·Granted Jul 16, 2002·48 cites·11 claims
- 0485US7336543B2Non-volatile memory device with page buffer having dual registers and methods using the sameELITE SEMICONDUCTOR ESMT·Filed 2006·Granted Feb 26, 2008·18 cites·24 claims
- 0585US6262588B1Bias monitor for semiconductor burn-inVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Jul 17, 2001·30 cites·6 claims
- 0684US7630267B2Temperature detector in an integrated circuitELITE SEMICONDUCTOR ESMT·Filed 2007·Granted Dec 8, 2009·13 cites·18 claims
- 0784US7443230B2Charge pump circuitELITE SEMICONDUCTOR ESMT·Filed 2006·Granted Oct 28, 2008·22 cites·7 claims
- 0882US7547941B2NAND non-volatile two-bit memory and fabrication methodELITE SEMICONDUCTOR ESMT·Filed 2006·Granted Jun 16, 2009·11 cites·16 claims
- 0982US5702968AMethod for fabricating a honeycomb shaped capacitorVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Dec 30, 1997·63 cites·17 claims
- 1081US7804326B1Voltage level shifterELITE SEMICONDUCTOR ESMT·Filed 2009·Granted Sep 28, 2010·11 cites·18 claims
- 1181US7391651B2Method for programming NAND flash memory device and page buffer performing the sameELITE SEMICONDUCTOR ESMT·Filed 2006·Granted Jun 24, 2008·14 cites·9 claims
- 1281US7263004B2Method and apparatus for determining sensing timing of flash memoryELITE SEMICONDUCTOR ESMT·Filed 2005·Granted Aug 28, 2007·14 cites·26 claims
- 1381US7009882B2Bit switch voltage drop compensation during programming in nonvolatile memoryELITE SEMICONDUCTOR ESMT·Filed 2004·Granted Mar 7, 2006·33 cites·12 claims
- 1480US10445011B2Flash memory storage apparatusWINBOND ELECTRONICS CORP·Filed 2018·Granted Oct 15, 2019·3 cites·10 claims
- 1580US5652459AMoisture guard ring for integrated circuit applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Jul 29, 1997·58 cites·17 claims
- 1680US5436188ADram cell process having elk horn shaped capacitorIND TECH RES INST·Filed 1994·Granted Jul 25, 1995·70 cites·28 claims
- 1778US7366040B2Method of reducing settling time in flash memories and improved flash memoryELITE SEMICONDUTOR MEMORY TECH·Filed 2005·Granted Apr 29, 2008·15 cites·16 claims
- 1877US7403427B2Method and apparatus for reducing stress in word line driver transistors during erasureELITE SEMICONDUCTOR ESMT·Filed 2005·Granted Jul 22, 2008·11 cites·12 claims
- 1976US5550076AMethod of manufacture of coaxial capacitor for dram memory cell and cell manufactured therebyVANGUARD INT SEMICONDUCT CORP·Filed 1995·Granted Aug 27, 1996·39 cites·23 claims
- 2076US5538924AMethod of forming a moisture guard ring for integrated circuit applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1995·Granted Jul 23, 1996·48 cites·9 claims
- 2175US8405375B2Intermittently activated bandgap reference circuitCHEN CHUNG-ZEN·Filed 2011·Granted Mar 26, 2013·6 cites·20 claims
- 2274US8456922B2Method for erasing memory cells in a flash memory device using a positive well bias voltage and a negative word line voltageCHEN CHUNG-ZEN·Filed 2012·Granted Jun 4, 2013·3 cites·20 claims
- 2374US8189396B2Word line driver in a hierarchical NOR flash memoryCHEN CHUNG-ZEN·Filed 2006·Granted May 29, 2012·6 cites·17 claims
- 2473US7705631B2Level shifter circuitELITE SEMICONDUCTOR ESMT·Filed 2008·Granted Apr 27, 2010·7 cites·14 claims
- 2573US7466611B1Selection method of bit line redundancy repair and apparatus performing the sameELITE SEMICONDUCTOR ESMT·Filed 2007·Granted Dec 16, 2008·9 cites·20 claims
- 2673US5869861ACoaxial capacitor for DRAM memory cellVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Feb 9, 1999·34 cites·20 claims
- 2773US5712206AMethod of forming moisture barrier layers for integrated circuit applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Jan 27, 1998·41 cites·21 claims
- 2872US7643352B2Method for erasing flash memoryELITE SEMICONDUCTOR ESMT·Filed 2008·Granted Jan 5, 2010·8 cites·9 claims
- 2970US8565040B1Voltage regulator circuitCHEN CHUNG ZEN·Filed 2012·Granted Oct 22, 2013·4 cites·20 claims
- 3070US6394882B1CMP method and substrate carrier head for polishing with improved uniformityVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted May 28, 2002·32 cites·18 claims
- 3169US10305482B2Voltage level shifterWINBOND ELECTRONICS CORP·Filed 2017·Granted May 28, 2019·2 cites·11 claims
- 3269US7606952B2Method for operating serial flash memoryELITE SEMICONDUCTOR ESMT·Filed 2006·Granted Oct 20, 2009·7 cites·15 claims
- 3368US11594281B2Method for erasing memory cells in a flash memory device using a positive well bias voltage and a negative word line voltageMOSAID TECH INCORPORATED·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
- 3467US5760453AMoisture barrier layers for integrated circuit applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Jun 2, 1998·32 cites·9 claims
- 3566US7200043B2Nonvolatile memory using a two-step cell verification processELITE SEMICONDUCTOR ESMT·Filed 2005·Granted Apr 3, 2007·6 cites·29 claims
- 3665US7277329B2Erase method to reduce erase time and to prevent over-eraseELITE SEMICONDUCTOR ESMT·Filed 2005·Granted Oct 2, 2007·6 cites·10 claims
- 3764US7929366B2Temperature detector in an integrated circuitMOSAID TECHNOLOGIES INC·Filed 2009·Granted Apr 19, 2011·4 cites·20 claims
- 3864US7924610B2Method for conducting over-erase correctionELITE SEMICONDUCTOR ESMT·Filed 2009·Granted Apr 12, 2011·7 cites·6 claims
- 3963US8107315B2Double data rate memory device having data selection circuit and data pathsCHEN CHUNG ZEN·Filed 2010·Granted Jan 31, 2012·3 cites·18 claims
- 4063US7023734B2Overerase correction in flash EEPROM memoryELITE SEMICONDUCTOR ESMT·Filed 2004·Granted Apr 4, 2006·13 cites·25 claims
- 4162US11983417B2Power-on read circuitWINBOND ELECTRONICS CORP·Filed 2022·Granted May 14, 2024·0 cites·18 claims
- 4262US10468109B2Method for erasing memory cells in a flash memory device using a positive well bias voltage and a negative word line voltageCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2015·Granted Nov 5, 2019·1 cites·20 claims
- 4362US7525849B2Flash memory with sequential programmingELITE SEMICONDUCTOR ESMT·Filed 2007·Granted Apr 28, 2009·5 cites·22 claims
- 4460US8031550B2Voltage regulator circuit for a memory circuitELITE SEMICONDUCTOR ESMT·Filed 2008·Granted Oct 4, 2011·4 cites·6 claims
- 4560US5501998AMethod for fabricating dynamic random access memory cells having vertical sidewall stacked storage capacitorsIND TECHNOLOGY RESEARCH INSTIT·Filed 1994·Granted Mar 26, 1996·21 cites·25 claims
- 4660US2025336456A1Flash memory device and program method thereofWINBOND ELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 4759US9214233B2Method for erasing memory cells in a flash memory device using a positive well bias voltage and a negative word line voltageCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2013·Granted Dec 15, 2015·1 cites·20 claims
- 4857US12094543B2Memory and sense amplifying device thereofWINBOND ELECTRONICS CORP·Filed 2022·Granted Sep 17, 2024·0 cites·19 claims
- 4956US8369170B2Temperature detector in an integrated circuitMOSAID TECHNOLOGIES INC·Filed 2011·Granted Feb 5, 2013·1 cites·20 claims
- 5055US10923194B2Method for erasing memory cells in a flash memory device using a positive well bias voltage and a negative word line voltageCONVERSANT INTELLECTUAL PROPERTY MAN INC·Filed 2019·Granted Feb 16, 2021·0 cites·15 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →