Inventor · disambiguated record
Ching-Tzu Chen
Also filed as: CHEN CHING-TZU
25 granted patents·20 pending applications·99 citations·filing 2005–2024
94Inventor score
Top patents by PatentIndex Score
45 records- 0196US9406872B1Fabricating two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layerIBM·Filed 2015·Granted Aug 2, 2016·12 cites·10 claims
- 0284US11429524B2Optimized hierarchical scratchpads for enhanced artificial intelligence accelerator core utilizationIBM·Filed 2020·Granted Aug 30, 2022·2 cites·18 claims
- 0384US9601685B1Fabricating two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layerIBM·Filed 2016·Granted Mar 21, 2017·2 cites·19 claims
- 0483US8624223B2Side-gate defined tunable nanoconstriction in double-gated graphene multilayersIBM·Filed 2012·Granted Jan 7, 2014·6 cites·26 claims
- 0578USD647313SChairSUH KEN ENTPR CO LTD·Filed 2011·Granted Oct 25, 2011·28 cites·1 claims
- 0676US9484469B2Thin film device with protective layerIBM·Filed 2014·Granted Nov 1, 2016·2 cites·9 claims
- 0770US11177432B2Heusler-alloy and ferrimagnet based magnetic domain-wall devices for artificial neural network applicationsIBM·Filed 2018·Granted Nov 16, 2021·2 cites·12 claims
- 0870US7686179B2Stackable receptacleCHEN CHING-TZU·Filed 2005·Granted Mar 30, 2010·4 cites·2 claims
- 0970US2023361038A1Topological semi-metal interconnectsIBM·Filed 2023·Application pending·0 cites
- 1067US12324365B2Proximity heater to lower RRAM forming voltageIBM·Filed 2022·Granted Jun 3, 2025·0 cites·25 claims
- 1167US11749602B2Topological semi-metal interconnectsIBM·Filed 2020·Granted Sep 5, 2023·0 cites·9 claims
- 1265US12207570B2Phase change memory with multi-level programmingIBM·Filed 2022·Granted Jan 21, 2025·0 cites·16 claims
- 1365USD554319STrash canCHEN CHING-TZU·Filed 2006·Granted Oct 30, 2007·15 cites·1 claims
- 1461US12451432B2Multi-layer topological interconnect with proximal doping layerIBM·Filed 2022·Granted Oct 21, 2025·0 cites·9 claims
- 1561US8623717B2Side-gate defined tunable nanoconstriction in double-gated graphene multilayersCHEN CHING-TZU·Filed 2012·Granted Jan 7, 2014·1 cites·13 claims
- 1661US2025300078A1Hybrid interconnect structure with topological conductor interface layerIBM·Filed 2024·Application pending·0 cites
- 1761US2025008848A1Low drift phase change material composite matrixIBM·Filed 2023·Application pending·0 cites
- 1861US2025273562A1Ultrafast transport interconnectsIBM·Filed 2024·Application pending·0 cites
- 1961US2025185258A1Phase change memory with partial sidewall spacer contactIBM·Filed 2023·Application pending·0 cites
- 2060US2025309099A1Directional conductor interconnect with embedded viaIBM·Filed 2024·Application pending·0 cites
- 2159US10079355B2Thin film device with protective layerIBM·Filed 2017·Granted Sep 18, 2018·0 cites·6 claims
- 2258US12453294B2Multi-level programming of phase change memory deviceIBM·Filed 2021·Granted Oct 21, 2025·0 cites·20 claims
- 2358US11910731B2Embedded heater in a phase change memory materialIBM·Filed 2021·Granted Feb 20, 2024·0 cites·9 claims
- 2458USD685994SContainerSUH KEN ENTPR CO LTD·Filed 2012·Granted Jul 16, 2013·11 cites·1 claims
- 2557US12250889B2Phase change memory cell with double active volumeIBM·Filed 2022·Granted Mar 11, 2025·0 cites·21 claims
- 2657US9960345B2Two-dimensional array of four-terminal thin film devices with surface-sensitive conductor layer and method of fabricating the sameIBM·Filed 2017·Granted May 1, 2018·0 cites·20 claims
- 2757US9935283B2Thin film device with protective layerIBM·Filed 2016·Granted Apr 3, 2018·0 cites·5 claims
- 2857US9728733B2Thin film device with protective layerIBM·Filed 2016·Granted Aug 8, 2017·0 cites·7 claims
- 2957US2025085331A1Carrier-resolved hall measurement with multi-harmonic magnetoresistance analysisIBM·Filed 2023·Application pending·0 cites
- 3057US2025185525A1Phase-change memory cell with sidewall outer contactIBM·Filed 2023·Application pending·0 cites
- 3156US2025204283A1Low-variability, high-density disc cell with horizontally aligned electrodesIBM·Filed 2023·Application pending·0 cites
- 3256US2025203878A1Electroformed energy-efficient phase change memory device with thin active regionIBM·Filed 2023·Application pending·0 cites
- 3355US2024237544A1Vertical magnetic tunnel junction deviceIBM·Filed 2023·Application pending·0 cites
- 3455US2024074336A1Self-aligned patterned projection liner for sidewall electrode pcmIBM·Filed 2022·Application pending·0 cites
- 3555US2025081863A1Structure to regulate multi-filament formation on memory structureIBM·Filed 2023·Application pending·0 cites
- 3652US2024107900A1Phase change memory cell sidewall heaterIBM·Filed 2022·Application pending·0 cites
- 3750US2024008374A1Vertical ultra-thin pcm cellIBM·Filed 2022·Application pending·0 cites
- 3848US2014151771A1Thin film deposition and logic deviceIBM·Filed 2013·Application pending·0 cites
- 3947USD677054SStorage boxCHEN CHING-TZU·Filed 2011·Granted Mar 5, 2013·6 cites·1 claims
- 4047US2014151770A1Thin film deposition and logic deviceIBM·Filed 2012·Application pending·0 cites
- 4146US2013146498A1Sectional containerCHEN CHING-TZU·Filed 2011·Application pending·0 cites
- 4241USD565301SCollecting containerCHEN CHING-TZU·Filed 2006·Granted Apr 1, 2008·5 cites·1 claims
- 4340US2006244723A1Method of using a mouse to carry out multimedia adjustmentsCHEN CHING-TZU·Filed 2005·Application pending·0 cites
- 4437USD609472SStorage binCHEN CHING-TZU·Filed 2009·Granted Feb 9, 2010·3 cites·1 claims
- 4534US2006267941A1Mouse with one or more additional multifunctional control membersCHEN CHING-TZU·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →