Inventor · disambiguated record
Chi-Ming Chen
Also filed as: CHEN CHI · CHEN CHI MING H · CHEN CHI-MING
148 granted patents·48 pending applications·1,107 citations·filing 1991–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD69CHEN CHI-MING25TAIWAN FU HSING IND CO LTD23TAIWAN SEMICONDUCTOR MFG22FOXCONN INTERCONNECT TECHNOLOGY LTD10
Top patents by PatentIndex Score
196 records- 0198US8476146B2Reducing wafer distortion through a low CTE layerCHEN CHI-MING·Filed 2010·Granted Jul 2, 2013·134 cites·20 claims
- 0297US7624606B1Rekeyable lock cylinder, plug assembly of the same and method for rekeying the sameTAIWAN FU HSING IND CO LTD·Filed 2008·Granted Dec 1, 2009·48 cites·9 claims
- 0397US7448240B1Lock assemblyTAIWAN FU HSING IND CO LTD·Filed 2007·Granted Nov 11, 2008·61 cites·18 claims
- 0497US7448239B1Lock assemblyTAIWAN FU HSING IND CO LTD·Filed 2007·Granted Nov 11, 2008·58 cites·18 claims
- 0596US8866192B1Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 21, 2014·29 cites·20 claims
- 0696US8803158B1High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 12, 2014·24 cites·20 claims
- 0796US8624326B2FinFET device and method of manufacturing sameCHEN CHI-MING·Filed 2011·Granted Jan 7, 2014·29 cites·20 claims
- 0896US7628048B2Rekeyable lock cylinder and method for rekeying the sameTAIWAN FU HSING IND CO LTD·Filed 2009·Granted Dec 8, 2009·41 cites·12 claims
- 0995US11923237B2Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·2 cites·20 claims
- 1095US9425301B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 23, 2016·14 cites·17 claims
- 1194US11522066B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 6, 2022·2 cites·20 claims
- 1294US9660396B2Cable connector assembly with improved indication effectFOXCONN INTERCONNECT TECHNOLOGY LTD·Filed 2015·Granted May 23, 2017·20 cites·18 claims
- 1394US8448484B2Rekeyable lock cylinderHUANG CHAO-MING·Filed 2011·Granted May 28, 2013·25 cites·15 claims
- 1494US7980106B2Rekeyable lock cylinder, plug assembly of the same and method for rekeying the sameTAIWAN FU HSING IND CO LTD·Filed 2009·Granted Jul 19, 2011·30 cites·15 claims
- 1593US10522647B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·5 cites·20 claims
- 1693US10014402B1High electron mobility transistor (HEMT) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 3, 2018·9 cites·20 claims
- 1793US9142407B2Semiconductor structure having sets of III-V compound layers and method of forming the sameCHEN CHI-MING·Filed 2013·Granted Sep 22, 2015·9 cites·20 claims
- 1892US9660063B2Semiconductor structure having sets of III-V compound layers and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·5 cites·20 claims
- 1992US9368610B2High electron mobility transistor with indium nitride layerTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·6 cites·20 claims
- 2092US9099388B2III-V multi-channel FinFETsLIN HUNG-TA·Filed 2011·Granted Aug 4, 2015·13 cites·17 claims
- 2192US8912570B2High electron mobility transistor and method of forming the sameCHIANG CHEN-HAO·Filed 2012·Granted Dec 16, 2014·21 cites·18 claims
- 2292US8519630B2Driving circuit capable of enhancing energy conversion efficiency and driving method thereofWANG JING-CHYI·Filed 2011·Granted Aug 27, 2013·25 cites·10 claims
- 2392US8161783B2Quickly rekeyable lock cylinder and plug assembly thereofHUANG CHAO-MING·Filed 2009·Granted Apr 24, 2012·24 cites·20 claims
- 2491US9233844B2Graded aluminum—gallium—nitride and superlattice buffer layer for III-V nitride layer on silicon substrateCHEN CHI-MING·Filed 2012·Granted Jan 12, 2016·12 cites·20 claims
- 2590US11515408B2Rough buffer layer for group III-V devices on siliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·2 cites·20 claims
- 2690US9245991B2Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 26, 2016·8 cites·20 claims
- 2790US8895992B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 25, 2014·8 cites·19 claims
- 2890US7937976B2Rekeyable lock cylinder and operating method thereofTAIWAN FU HSING IND CO LTD·Filed 2009·Granted May 10, 2011·20 cites·17 claims
- 2990US2025344432A1Rough buffer layer for group iii-v devices on siliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3089US9525054B2High electron mobility transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 20, 2016·8 cites·20 claims
- 3189US8928120B1Wafer edge protection structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·8 cites·20 claims
- 3289US8901609B1Transistor having doped substrate and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·12 cites·20 claims
- 3389US8456105B2Driving circuit capable of enhancing energy conversion efficiency and driving method thereofWANG JING-CHYI·Filed 2011·Granted Jun 4, 2013·14 cites·16 claims
- 3488US8056378B2Rekeyable lock cylinder and rekeying method thereofHUANG CHAO-MING·Filed 2008·Granted Nov 15, 2011·18 cites·16 claims
- 3588US2025366108A1Diffusion barrier layer for source and drain structures to increase transistor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3687US11594413B2Semiconductor structure having sets of III-V compound layers and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·1 cites·20 claims
- 3786US8969882B1Transistor having an ohmic contact by screen layer and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 3, 2015·6 cites·20 claims
- 3886US8364873B2Data transmission system and a programmable SPI controllerNUVOTON TECHNOLOGY CORP·Filed 2011·Granted Jan 29, 2013·10 cites·16 claims
- 3986US7228788B1Piston structure for an air pumpCHEN CHI-MING·Filed 2005·Granted Jun 12, 2007·10 cites·3 claims
- 4085US12426295B2Rough buffer layer for group III-V devices on siliconTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 4185US11329148B2Semiconductor device having doped seed layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 10, 2022·2 cites·20 claims
- 4284US11551927B2High electron mobility transistor (HEMT) having an indium-containing layer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 10, 2023·1 cites·20 claims
- 4384US9859667B2Cable connector assembly having an illumination functionFOXCONN INTERCONNECT TECHNOLOGY LTD·Filed 2016·Granted Jan 2, 2018·7 cites·13 claims
- 4484US9450350B2Cable connector assembly with improved luminous effectFOXCONN INTERCONNECT TECHNOLOGY LTD·Filed 2015·Granted Sep 20, 2016·7 cites·20 claims
- 4584US7357010B1Plug assembly for a door lockTAIWAN FU HSING IND CO LTD·Filed 2006·Granted Apr 15, 2008·13 cites·10 claims
- 4683US12439662B2Diffusion barrier layer for source and drain structures to increase transistor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
- 4783US12334389B2Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 4883US11984486B2Method of implanting dopants into a group III-nitride structure and device formedTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 14, 2024·0 cites·20 claims
- 4983US9818858B1Multi-layer active layer having a partial recessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·4 cites·20 claims
- 5083US9685525B2Sidewall passivation for HEMT devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 20, 2017·2 cites·20 claims
Showing the top 50 of 196 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →