Inventor · disambiguated record
Chun-Heng Chen
Also filed as: CHEN CHUN-HENG
33 granted patents·27 pending applications·32 citations·filing 2009–2025
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD47IND TECH RES INST5TAIWAN SEMICONDUCTOR MFG2CHEN YU-HUNG1HUANG LEE-MAY1
Top patents by PatentIndex Score
60 records- 0196US11469229B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 11, 2022·3 cites·20 claims
- 0294US12046660B2Non-conformal capping layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 23, 2024·2 cites·20 claims
- 0393US11437491B2Non-conformal capping layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·3 cites·20 claims
- 0493US11430865B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·3 cites·20 claims
- 0590US11855095B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 0686US7855822B2Photosensitive electrochromic deviceIND TECH RES INST·Filed 2009·Granted Dec 21, 2010·10 cites·17 claims
- 0786US2025359273A1Finfet having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0885US12501697B2Methods of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 0984US2025351406A1Dielectric Layer on Semiconductor Device and Method of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1083US12278267B2Semiconductor devices having funnel-shaped gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 15, 2025·0 cites·20 claims
- 1183US11640977B2Non-conformal oxide liner and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 2, 2023·1 cites·13 claims
- 1283US2025098205A1Non-conformal oxide liner and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1382US2025331240A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1481US11296084B2Deposition method, semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·1 cites·20 claims
- 1581US9837504B2Method of modifying capping layer in semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 5, 2017·3 cites·20 claims
- 1680US9130113B2Method and apparatus for resistivity and transmittance optimization in TCO solar cell filmsTSMC SOLAR LTD·Filed 2012·Granted Sep 8, 2015·3 cites·15 claims
- 1779US12199158B2Non-conformal oxide liner and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 1878US12376344B2Semiconductor device comprising channel layers with different thicknessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 1978US12015031B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 2078US2025142900A1Gate oxide of nanostructure transistor with increased corner thicknessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2178US2025344463A1Semiconductor Device Structure and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2277US2024395912A1Dielectric Layer on Semiconductor Device and Method of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2376US12218197B2Gate oxide of nanostructure transistor with increased corner thicknessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 2476US11990509B2Semiconductor devices having gate structures with slanted sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 2576US10784359B2Non-conformal oxide liner and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·1 cites·20 claims
- 2675US2025248086A1Semiconductor devices having funnel-shaped gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2775US2024088156A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2874US2024347622A1Non-conformal capping layer and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2973US2025275208A1NON-CONFORMAL GATE OXIDE FORMATION ON FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3071US2025254938A1Nanostructure field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3169US12336211B2Dielectric layer on semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 17, 2025·0 cites·20 claims
- 3269US2023124471A1Finfet having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3368US11942556B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 3467US12336248B2Non-conformal gate oxide formation on FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 3567US11855140B2Gate oxide of nanostructure transistor with increased corner thicknessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3667US2014087487A1Method for repairing solar cell moduleIND TECH RES INST·Filed 2013·Application pending·0 cites
- 3765US11532718B2FinFET having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 3863US12310074B2NanoStructure field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 3963US8796542B2Encapsulant material, crystalline silicon photovoltaic module and thin film photovoltaic moduleHUANG LEE-MAY·Filed 2009·Granted Aug 5, 2014·1 cites·17 claims
- 4060US2010200040A1Device and method for repairing solar cell moduleIND TECH RES INST·Filed 2009·Application pending·0 cites
- 4160US2025058353A1Semiconductor ultrasonic transducer device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4259US2025314821A1Photonic structure and methods of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4359US2025383503A1Photonic integrated circuit and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4458US10879061B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 4558US2025006777A1Thin film resistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4657US2022204698A1Polyimide And Film Formed TherefromMICROCOSM TECH CO LTD·Filed 2021·Application pending·0 cites
- 4756US2025271614A1Waveguide with transitional portion and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4855US2024363529A1Thin film resistor with graded resistive layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4953US2024371917A1Resistor structure having cavities for increased resistor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5052US10269900B2Semiconductor film with adhesion layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
Showing the top 50 of 60 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →